BARITT Diode
The BARITT diode (barrier injection transit-time) is a high frequency semiconductor component of microelectronics. A related component is the DOVETT diode. The BARITT diode uses injection and transit-time properties of minority carriers to produce a negative resistance at microwave frequencies. About the biased forward boundary layer, the minority carriers are injected. There is no avalanche breakdown instead. Consequently, both the phase shift and the output power is substantially lower than in an IMPATT diode An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have negative resistance and are used as oscillators and amplifiers at microwav .... References {{Reflist Diodes ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Microelectronics
Microelectronics is a subfield of electronics. As the name suggests, microelectronics relates to the study and manufacture (or microfabrication) of very small electronic designs and components. Usually, but not always, this means micrometre-scale or smaller. These devices are typically made from semiconductor materials. Many components of normal electronic design are available in a microelectronic equivalent. These include transistors, capacitors, inductors, resistors, diodes and (naturally) insulators and conductors can all be found in microelectronic devices. Unique wiring techniques such as wire bonding are also often used in microelectronics because of the unusually small size of the components, leads and pads. This technique requires specialized equipment and is expensive. Digital integrated circuits (ICs) consist of billions of transistors, resistors, diodes, and capacitors. Analog circuits commonly contain resistors and capacitors as well. Inductors are used in som ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Minority Carriers
In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current. In conducting media, particles serve to carry charge: *In many metals, the charge carriers are electrons. One or two of the valence electrons from each atom are able to move about freely within the crystal structure of the metal. The free electrons are referred to as conduction electrons, and the cloud of free electrons is called a Fermi gas. Many metals have electron and hole bands. In some, the majority carriers are holes. *In electrolytes, such as salt water, the charge carriers are ions, which are atoms or molecul ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Negative Resistance
In electronics, negative resistance (NR) is a property of some electrical circuits and devices in which an increase in voltage across the device's terminals results in a decrease in electric current through it. This is in contrast to an ordinary resistor in which an increase of applied voltage causes a proportional increase in current due to Ohm's law, resulting in a positive resistance. While a positive resistance consumes power from current passing through it, a negative resistance produces power. Under certain conditions it can increase the power of an electrical signal, amplifying it. Negative resistance is an uncommon property which occurs in a few nonlinear electronic components. In a nonlinear device, two types of resistance can be defined: 'static' or 'absolute resistance', the ratio of voltage to current v / i, and ''differential resistance'', the ratio of a change in voltage to the resulting change in current \Delta v/\Delta i. The term negative resistance means ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Avalanche Breakdown
Avalanche breakdown (or avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche. The avalanche process occurs when carriers in the transition region are accelerated by the electric field to energies sufficient to create mobile or free electron-hole pairs via collisions with bound electrons. Explanation Materials conduct electricity if they contain mobile charge carriers. There are two types of charge carriers in a semiconductor: free electrons (mobile electrons) and electron holes (mobile holes which are missing electrons from the normally occupied electron states). A normally bound electron (e.g., in a bond) in a reverse-biased diode may break loose due to a thermal fluctuation or excitation, creating a mobile electron-hole pair. If there is a voltage gradient (el ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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IMPATT Diode
An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. They operate at frequencies of about 3 and 100 GHz, or higher. The main advantage is their high-power capability; single IMPATT diodes can produce continuous microwave outputs of up to 3 kilowatts, and pulsed outputs of much higher power. These diodes are used in a variety of applications from low-power radar systems to proximity alarms. A major drawback of IMPATT diodes is the high level of phase noise they generate. This results from the statistical nature of the avalanche process. Device structure The IMPATT diode family includes many different junctions and metal semiconductor devices. The first IMPATT oscillation was obtained from a simple silicon p–n junction diode biased into a reverse avalanche break down ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |