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AlSb
Aluminium antimonide (AlSb) is a semiconductor of the group III-V family containing aluminium and antimony. The lattice constant is 0.61 nm. The indirect bandgap is approximately 1.6 eV at 300 K, whereas the direct band gap is 2.22 eV. Its electron mobility is 200 cm²·V−1·s−1 and hole mobility 400 cm²·V−1·s−1 at 300 K. Its refractive index is 3.3 at a wavelength of 2 μm, and its dielectric constant is 10.9 at microwave frequencies.K Seeger and E Schonherr "Microwave dielectric constant of aluminium antimonide" Semicond. Sci. Technol. 6 (1991) 301 AlSb can be reacted with other III-V materials to produce ternary materials including AlInSb, AlGaSb and AlAsSb. Aluminum antimonide is rather flammable because of the reducing tendency of the antimonide (Sb3−) ion. It burns to produce aluminum oxide and antimony trioxide. See also * Gallium antimonide * Indium antimonide * Aluminium arsenide Aluminium arsenide () is a semico ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
III-V Semiconductors
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
III-V Compounds
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium
Aluminium (aluminum in American and Canadian English) is a chemical element with the symbol Al and atomic number 13. Aluminium has a density lower than those of other common metals, at approximately one third that of steel. It has a great affinity towards oxygen, and forms a protective layer of oxide on the surface when exposed to air. Aluminium visually resembles silver, both in its color and in its great ability to reflect light. It is soft, non-magnetic and ductile. It has one stable isotope, 27Al; this isotope is very common, making aluminium the twelfth most common element in the Universe. The radioactivity of 26Al is used in radiodating. Chemically, aluminium is a post-transition metal in the boron group; as is common for the group, aluminium forms compounds primarily in the +3 oxidation state. The aluminium cation Al3+ is small and highly charged; as such, it is polarizing, and bonds aluminium forms tend towards covalency. The strong affinity tow ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium Compounds
Aluminium (or aluminum) combines characteristics of pre- and post-transition metals. Since it has few available electrons for metallic bonding, like its heavier group 13 congeners, it has the characteristic physical properties of a post-transition metal, with longer-than-expected interatomic distances.Greenwood and Earnshaw, pp. 222–4 Furthermore, as Al3+ is a small and highly charged cation, it is strongly polarizing and aluminium compounds tend towards covalency;Greenwood and Earnshaw, pp. 224–7 this behaviour is similar to that of beryllium (Be2+), an example of a diagonal relationship.Greenwood and Earnshaw, pp. 112–3 However, unlike all other post-transition metals, the underlying core under aluminium's valence shell is that of the preceding noble gas, whereas for gallium and indium it is that of the preceding noble gas plus a filled d-subshell, and for thallium and nihonium it is that of the preceding noble gas plus filled d- and f-subshells. Hence, aluminium does not suf ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Lattice Constant
A lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the unit cells in a crystal lattice, and is proportional to the distance between atoms in the crystal. A simple cubic crystal has only one lattice constant, the distance between atoms, but in general lattices in three dimensions have six lattice constants: the lengths ''a'', ''b'', and ''c'' of the three cell edges meeting at a vertex, and the angles ''α'', ''β'', and ''γ'' between those edges. The crystal lattice parameters ''a'', ''b'', and ''c'' have the dimension of length. The three numbers represent the size of the unit cell, that is, the distance from a given atom to an identical atom in the same position and orientation in a neighboring cell (except for very simple crystal structures, this will not necessarily be disance to the nearest neighbor). Their SI unit is the meter, and they are traditionally specified in angstroms (Å); an angstrom being 0.1 nanome ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium Indium Antimonide
Aluminium (aluminum in American and Canadian English) is a chemical element with the symbol Al and atomic number 13. Aluminium has a density lower than those of other common metals, at approximately one third that of steel. It has a great affinity towards oxygen, and forms a protective layer of oxide on the surface when exposed to air. Aluminium visually resembles silver, both in its color and in its great ability to reflect light. It is soft, non-magnetic and ductile. It has one stable isotope, 27Al; this isotope is very common, making aluminium the twelfth most common element in the Universe. The radioactivity of 26Al is used in radiodating. Chemically, aluminium is a post-transition metal in the boron group; as is common for the group, aluminium forms compounds primarily in the +3 oxidation state. The aluminium cation Al3+ is small and highly charged; as such, it is polarizing, and bonds aluminium forms tend towards covalency. The strong affinity toward ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Antimonides
Antimonides (sometimes called stibnides) are Chemical compound, compounds of antimony with more electropositive elements. The antimonide ion is Sb3−. Reduction of antimony by alkali metals or by other methods leads to alkali metal antimonides of various types. Known antimonides include isolated Sb3− ions (in Li3Sb, Na3Sb), dumbbells Sb24− in Cs4Sb2, discrete antimony chains, for example, Sb68− in SrSb3, infinite spirals (Sb−)n (in NaSb, RbSb), planar four-membered rings Sb42−, Sb73− cages in Cs3Sb, and net shaped anions Sb32− in BaSb3. Some antimonides are semiconductors, e.g. those of the boron group such as indium antimonide. Many antimonides are flammable or decomposed by oxygen when heated since the antimonide ion is a reducing agent. References See also * Antimonide mineral Anions Antimonides {{inorganic-compound-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium Arsenide
Aluminium arsenide () is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide. (AlAs) can form a superlattice with gallium arsenide ( GaAs) which results in its semiconductor properties. Because GaAs and AlAs have almost the same lattice constant, the layers have very little induced strain, which allows them to be grown almost arbitrarily thick. This allows for extremely high performance high electron mobility, HEMT transistors, and other quantum well devices. Properties It has the following properties: *Thermal expansion coefficient 5 µm/(°C*m) *Debye temperature 417 K * Microhardness 5.0 GPa (50 g load) *Number of atoms in 1 cm3: (4.42-0.17x)·1022Dierks, S"Aluminum Arsenide - Material Safety Data". The Fitzgerald Group, MIT, 1994. *Bulk modulus (7.55+0.26x)·1011 dyn cm−2 *Hardness on the Mohs scale: ~ 5 *Insolubility in H2O Uses Aluminium arsenide is a III-V comp ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Antimonide
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow- gap semiconductor material from the III- V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 μm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter. History The intermetallic compound was first reported by Liu and Peretti in 1951, who gave its homogeneity range, structure type, and lattice constant. Polycrystalline ingots of InSb were prepared by Heinrich Welker in 1952, although they were not very pure by today's semiconductor standards. Welker was interested in systematically studying the semiconducting properties of t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Antimonide
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. History The intermetallic compound GaSb was first prepared in 1926 by Victor Goldschmidt, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized gallium phosphide and gallium arsenide. The Ga-Sb phase equilibria was investigated in 1955 by Koster and by Greenfield.Greenfield, I. G.; Smith, R. L., ''Trans. AIME'' 203, 351 (1955). Applications GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems. See also * Aluminium antimonide * Indium antimonide * Gallium arsenide References External links properties listed at NSM Ioffe Institute. National Compound Semiconductor Roadmapat the Office of Naval Research The Office of Naval Research (ONR ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Antimony Trioxide
Antimony(III) oxide is the inorganic compound with the formula Sb2O3. It is the most important commercial compound of antimony. It is found in nature as the minerals valentinite and senarmontite. Like most polymeric oxides, Sb2O3 dissolves in aqueous solutions with hydrolysis. A mixed arsenic-antimony oxide occurs in nature as the very rare mineral stibioclaudetite. Production and properties Global production of antimony(III) oxide in 2012 was 130,000 tonnes, an increase from 112,600 tonnes in 2002. China produces the largest share followed by US/Mexico, Europe, Japan and South Africa and other countries (2%). As of 2010, antimony(III) oxide was produced at four sites in EU27. It is produced via two routes, re-volatilizing of crude antimony(III) oxide and by oxidation of antimony metal. Oxidation of antimony metal dominates in Europe. Several processes for the production of crude antimony(III) oxide or metallic antimony from virgin material. The choice of process depends on th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
