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5nm
In semiconductor manufacturing, the International Roadmap for Devices and Systems defines the 5  nm process as the MOSFET technology node following the 7 nm node. In 2020, Samsung and TSMC entered volume production of 5 nm chips, manufactured for companies including Apple, Marvell, Huawei and Qualcomm. The term "5 nanometer" has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors. According to the projections contained in the 2021 update of the International Roadmap for Devices and Systems published by IEEE Standards Association Industry Connection, a 5 nm node is expected to have a contacted gate pitch of 51 nanometers and a tightest metal pitch of 30 nanometers. However, in real world commercial practice, "5 nm" is used primarily as a marketing term by individual microchip manufacturers to refer to a new, improved generation of silicon semiconductor chips in terms of increased transistor density (i.e ...
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7 Nm Process
In semiconductor manufacturing, the International Technology Roadmap for Semiconductors defines the 7  nm process as the MOSFET technology node following the 10 nm node. It is based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology. Taiwan Semiconductor Manufacturing Company (TSMC) began production of 256 Mbit SRAM memory chips using a 7 nm process called N7 in June 2016, before Samsung began mass production of their 7 nm process called 7LPP devices in 2018. The first mainstream 7 nm mobile processor intended for mass market use, the Apple A12 Bionic, was released at Apple's September 2018 event. Although Huawei announced its own 7 nm processor before the Apple A12 Bionic, the Kirin 980 on August 31, 2018, the Apple A12 Bionic was released for public, mass market use to consumers before the Kirin 980. Both chips are manufactured by TSMC. AMD has released their "Rome" (EPYC 2) processors for servers ...
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Technology Node
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar diffusion and junction isolation) during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconductor fabrication plants, also called foundries or fabs. All fabrication takes place inside a c ...
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Semiconductor Manufacturing
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar diffusion and junction isolation) during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconductor fabrication plants, also called foundries or fabs. All fabrication takes place inside a c ...
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Extreme Ultraviolet Lithography
Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in steppers, machines that make integrated circuits (ICs) for computers and other electronic devices. It uses a range of extreme ultraviolet (EUV) wavelengths, roughly spanning a 2% FWHM bandwidth about 13.5  nm, to produce a pattern by exposing reflective photomask to UV light which gets reflected onto a substrate covered by photoresist. It is widely applied in semiconductor device fabrication process. As of 2022, ASML Holding is the only company who produces and sells EUV systems for chip production, targeting 5 nm and 3 nm. At the 2019 International Electron Devices Meeting (IEDM), TSMC reported use of EUV for 5 nm in contact, via, metal line, and cut layers, where the cuts can be applied to fins, gates or metal lines. At IEDM 2020, TSMC reported their 5 nm minimum metal pitch to be reduced 30% from that of 7 nm, which was 40 nm. Samsung's 5&nbs ...
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Apple A14
The Apple A14 Bionic is a 64-bit ARMv8.5-A system on a chip (SoC), designed by Apple Inc. It appears in the fourth generation iPad Air and tenth generation iPad, as well as iPhone 12 Mini, iPhone 12, iPhone 12 Pro, and iPhone 12 Pro Max. Apple states that the central processing unit (CPU) performs up to 40% faster than the A12, while the graphics processing unit (GPU) is up to 30% faster than the A12. It also includes a 16-core neural engine and new machine learning matrix accelerators that perform twice and ten times as fast, respectively. Design The Apple A14 Bionic features an Apple-designed 64-bit, six-core CPU, implementing ARMv8 with two high-performance cores called Firestorm and four energy-efficient cores called Icestorm. The A14 integrates an Apple-designed four-core GPU with 30% faster graphics performance than the A12. The A14 includes dedicated neural network hardware that Apple calls a new 16-core Neural Engine. The Neural Engine can perform 11 trillion op ...
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Huawei Mate 40
Huawei Mate 40 , Huawei Mate 40 Pro , Huawei Mate 40 Pro Plus and Huawei Mate 40 RS Porsche Design is a high-end Android and HarmonyOS based phablets developed by Huawei for its Mate series, succeeding the Huawei Mate 30 range. They were released on October 22, 2020 at Huawei's Online Global Launch Event. Design The Mate 40 and Mate 40 Pro are constructed with an anodized aluminum frame and Gorilla Glass or artificial leather backing. The Mate 40 Pro+ uses ceramic for both the frame and the back. The notch on the Mate 30 series has been replaced by a cutout in the upper left hand corner. The Mate 40 has a circular cutout for the front-facing camera; the Mate 40 Pro and Mate 40 Pro+ have a larger pill-shaped cutout also accommodating the infrared facial recognition system. On the Mate 40 Pro and Mate 40 Pro+, the screen is dramatically curved like the Mate 30 Pro, but has physical volume buttons. Unlike the P40 series, the Mate 40 series uses a traditional earpiece speaker ...
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TSMC
Taiwan Semiconductor Manufacturing Company Limited (TSMC; also called Taiwan Semiconductor) is a Taiwanese multinational corporation, multinational semiconductor contract manufacturing and design company. It is the world's most valuable semiconductor company, the world's largest dedicated independent (Pure-play semiconductor foundry, pure-play) Foundry (electronics), semiconductor foundry, and one of Taiwan's largest companies, with its headquarters and main operations located in the Hsinchu Science Park in Hsinchu. It is majority owned by foreign investors. Founded in Taiwan in 1987 by Morris Chang, TSMC was the world's first dedicated semiconductor foundry and has long been the leading company in its field. When Chang retired in 2018, after 31 years of TSMC leadership, Mark Liu became chairman and C. C. Wei became Chief Executive. It has been listed on the Taiwan Stock Exchange (TWSE: 2330) since 1993; in 1997 it became the first Taiwanese company to be listed on the New York ...
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MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_con­ti­nuous_current_of_30  surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ...
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Quantum Tunnelling
Quantum tunnelling, also known as tunneling ( US) is a quantum mechanical phenomenon whereby a wavefunction can propagate through a potential barrier. The transmission through the barrier can be finite and depends exponentially on the barrier height and barrier width. The wavefunction may disappear on one side and reappear on the other side. The wavefunction and its first derivative are continuous. In steady-state, the probability flux in the forward direction is spatially uniform. No particle or wave is lost. Tunneling occurs with barriers of thickness around 1–3 nm and smaller. Some authors also identify the mere penetration of the wavefunction into the barrier, without transmission on the other side as a tunneling effect. Quantum tunneling is not predicted by the laws of classical mechanics where surmounting a potential barrier requires sufficient kinetic energy. Quantum tunneling plays an essential role in physical phenomena such as nuclear fusion and alpha radioact ...
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FinFET
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS (complementary metal-oxide-semiconductor) technology. FinFET is a type of non-planar transistor, or "3D" transistor. It is the basis for modern nanoelectronic semiconductor device fabrication. Microchips utilizing FinFET gates first became commercialized in the first half of the 2010s, and became the dominant gate design at 14 nm, 10 nm and 7 nm process nodes. It is common for a single FinFET transistor to contain several fins, arranged side by side and all covered ...
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Samsung Electronics
Samsung Electronics Co., Ltd. (, sometimes shortened to SEC and stylized as SΛMSUNG) is a South Korean multinational corporation, multinational electronics corporation headquartered in Yeongtong-gu, Suwon, South Korea. It is the pinnacle of the Samsung chaebol, accounting for 70% of the group's revenue in 2012. Samsung Electronics has played a key role in the group's corporate governance due to circular ownership. Samsung Electronics has Assembly line, assembly plants and sales networks in 74 countries and employs around 290,000 people. It is majority-owned by foreign investors. Samsung Electronics is the world's List of largest technology companies by revenue, second-largest technology company by revenue, and its market capitalization stood at US$520.65 billion, the 12th largest in the world. Samsung is a major manufacturer of Electronic component, Electronic Components such as lithium-ion batteries, semiconductors, image sensors, camera modules, and Display device, d ...
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Gate-all-around
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's law (in its narrow, specific version concerning density scaling, ...
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