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3 µm Process
The 3 μm process is the level of MOSFET semiconductor process technology that was reached around 1977, by leading semiconductor companies such as Intel. Products featuring 3 μm manufacturing process * Intel's 8085, 8086, 8088 CPU's launched in 1976, 1978, 1979, respectively, were manufactured using its 3.2 μm NMOS (HMOS) process. . * Hitachi's 4 kbit HM6147 SRAM memory chip, launched in 1978, introduced the twin-well CMOS process, at 3 μm. * Motorola 68000 (MC68000) CPU, launched in 1979, was originally fabricated using an HMOS process with a 3.5 μm feature size. * The ARM1 This is a list of central processing units based on the ARM family of instruction sets designed by ARM Ltd. and third parties, sorted by version of the ARM instruction set, release and name. In 2005, ARM provided a summary of the numerous vend ... was launched in 1985 and manufactured on a 3μm process. References *03000 Computer-related introductions in 1975 {{nano-t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Process Technology
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar diffusion and junction isolation) during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconductor fabrication plants, also called foundries or fabs. All fabrication takes place inside a c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Intel
Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California. It is the world's largest semiconductor chip manufacturer by revenue, and is one of the developers of the x86 series of instruction sets, the instruction sets found in most personal computers (PCs). Incorporated in Delaware, Intel ranked No. 45 in the 2020 ''Fortune'' 500 list of the largest United States corporations by total revenue for nearly a decade, from 2007 to 2016 fiscal years. Intel supplies microprocessors for computer system manufacturers such as Acer, Lenovo, HP, and Dell. Intel also manufactures motherboard chipsets, network interface controllers and integrated circuits, flash memory, graphics chips, embedded processors and other devices related to communications and computing. Intel (''int''egrated and ''el''ectronics) was founded on July 18, 1968, by semiconductor pioneers Gordon Moore (of Moore's law) and Robert Noyce ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Intel 8085
The Intel 8085 ("''eighty-eighty-five''") is an 8-bit microprocessor produced by Intel and introduced in March 1976. It is software-binary compatible with the more-famous Intel 8080 with only two minor instructions added to support its added interrupt and serial input/output features. However, it requires less support circuitry, allowing simpler and less expensive microcomputer systems to be built. The "5" in the part number highlighted the fact that the 8085 uses a single +5-volt (V) power supply by using depletion-mode transistors, rather than requiring the +5 V, −5 V and +12 V supplies needed by the 8080. This capability matched that of the competing Z80, a popular 8080-derived CPU introduced the year before. These processors could be used in computers running the CP/M operating system. The 8085 is supplied in a 40-pin DIP package. To maximise the functions on the available pins, the 8085 uses a multiplexed address/data (AD0-AD7) bus. However, an 8085 circu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
NMOS Logic
N-type metal-oxide-semiconductor logic uses n-type (-) MOSFETs (metal-oxide-semiconductor field-effect transistors) to implement logic gates and other digital circuits. These nMOS transistors operate by creating an inversion layer in a p-type transistor body. This inversion layer, called the n-channel, can conduct electrons between n-type "source" and "drain" terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity saturation. For many years, NMOS circuits were much faster than comparable PMOS and CMOS circuits, which had to use much slower p-channel transistors. It was also easier to manufacture NMOS than CMOS, as the latter has to implement p-channel transistors in special n-wells on the p-substrate. The major drawback with NMOS (and most other logic families) is that a DC current mus ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
