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3 Nm Process
In semiconductor manufacturing, the 3 nm process is the next die shrink after the 5 nanometer MOSFET (metal–oxide–semiconductor field-effect transistor) technology node. , Taiwanese chip manufacturer TSMC plans to put a 3 nm, semiconductor node termed N3 into volume production by the second half of 2022. An enhanced 3 nm chip process called N3e may start production in 2023. South Korean chipmaker Samsung officially targets the same time frame as TSMC (as of May 2022) with the start of 3 nm production in the first half of 2022 using 3GAE process technology and with 2nd-gen 3 nm process (named 3GAP) to follow in 2023, while according to other sources Samsung's 3 nm process will debut in 2024. American manufacturer Intel plans to start 3 nm production in 2023. Samsung's 3 nm process is based on GAAFET (gate-all-around field-effect transistor) technology, a type of multi-gate MOSFET technology, while TSMC's 3 nm process will still use ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Manufacturing
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar diffusion and junction isolation) during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconductor fabrication plants, also called foundries or fabs. All fabrication takes place inside a c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
NMOS Logic
N-type metal-oxide-semiconductor logic uses n-type (-) MOSFETs (metal-oxide-semiconductor field-effect transistors) to implement logic gates and other digital circuits. These nMOS transistors operate by creating an inversion layer in a p-type transistor body. This inversion layer, called the n-channel, can conduct electrons between n-type "source" and "drain" terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity saturation. For many years, NMOS circuits were much faster than comparable PMOS and CMOS circuits, which had to use much slower p-channel transistors. It was also easier to manufacture NMOS than CMOS, as the latter has to implement p-channel transistors in special n-wells on the p-substrate. The major drawback with NMOS (and most other logic families) is that a DC current mus ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Extreme Ultraviolet Lithography
Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in steppers, machines that make integrated circuits (ICs) for computers and other electronic devices. It uses a range of extreme ultraviolet (EUV) wavelengths, roughly spanning a 2% FWHM bandwidth about 13.5 nm, to produce a pattern by exposing reflective photomask to UV light which gets reflected onto a substrate covered by photoresist. It is widely applied in semiconductor device fabrication process. As of 2022, ASML Holding is the only company who produces and sells EUV systems for chip production, targeting 5 nm and 3 nm. At the 2019 International Electron Devices Meeting (IEDM), TSMC reported use of EUV for 5 nm in contact, via, metal line, and cut layers, where the cuts can be applied to fins, gates or metal lines. At IEDM 2020, TSMC reported their 5 nm minimum metal pitch to be reduced 30% from that of 7 nm, which was 40 nm. Samsung's 5&nbs ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Cadence Design Systems
Cadence Design Systems, Inc. (stylized as cādence), headquartered in San Jose, California, is an American multinational corporation, multinational computational software company, founded in 1988 by the merger of SDA Systems and ECAD, Inc. The company produces software, Electronic hardware, hardware and silicon structures for designing integrated circuits, System on chip, systems on chips (SoCs) and printed circuit boards. History Origins Cadence Design Systems began as an Electronic design automation, electronic design automation (EDA) company, formed by the 1988 merger of Solomon Design Automation (SDA), co-founded in 1983 by A. Richard Newton, Richard Newton, Alberto Sangiovanni-Vincentelli and James Solomon, and ECAD, Inc., ECAD, a public company co-founded by Ping Chao, Glen Antle and Paul Huang in 1982. SDA's CEO Joseph Costello (software executive), Joseph Costello was appointed as CEO of the newly combined company. Executive leadership Following the resignation of Cadenc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IMEC
Interuniversity Microelectronics Centre (IMEC) is an international research & development organization, active in the fields of nanoelectronics and digital technologies, with headquarters in Belgium. Luc Van den hove has served as President and CEO since 2009. In September 2016, imec merged with the Flemish digital research center, iMinds. Overview Imec employs around 4,000 researchers from more than 90 countries; it has numerous facilities dedicated to research and development around the world, including 12,000 square meters of cleanroom capacity for semiconductor processing. The imec headquarters are located in Leuven. History In 1982, the Flemish Government set up a program to strengthen the microelectronics industry in Flanders. This program included setting up a laboratory for advanced research in microelectronics (imec), a semiconductor foundry (former Alcatel Microelectronics, now STMicroelectronics and AMI Semiconductor,) and a training program for VLSI design enginee ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tainan Science Park
Tainan Science Park () of Taiwan is located in Sinshih, Shanhua and Anding Districts of Tainan City with a total area of , and is a part of the Southern Taiwan Science Park (STSP). History On 1 July 1993, the Executive Yuan approved the establishment of a science park in southern Taiwan as part of the Economic Revitalization Plan. The Phase I site of the park was approved in May 1995 and totaled , marking the beginning of high-tech development in southern Taiwan. Phase II was approved in September 2001 and covered an area of The park focuses on optoelectronics, integrated circuits, biotechnology, and precision machinery industries. See also *Kaohsiung Science Park *Hsinchu Science Park The Hsinchu Science Park (HSP; ) is an industrial park established by the government of Taiwan on 15 December 1980. It straddles Hsinchu City and Hsinchu County in Taiwan. History The idea of the establishment of the Hsinchu Science Park was ... References Further reading * * {{ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Fabrication Plant
In the microelectronics industry, a semiconductor fabrication plant (commonly called a fab; sometimes foundry) is a factory where devices such as integrated circuits are manufactured. Fabs require many expensive devices to function. Estimates put the cost of building a new fab over one billion U.S. dollars with values as high as $3–4 billion not being uncommon. TSMC invested $9.3 billion in its ''Fab15'' 300 mm wafer manufacturing facility in Taiwan. The same company estimations suggest that their future fab might cost $20 billion. A foundry model emerged in the 1990s: Foundries that produced their own designs were known as integrated device manufacturers (IDMs). Companies that farmed out manufacturing of their designs to foundries were termed fabless semiconductor companies. Those foundries, which did not create their own designs, were called pure-play semiconductor foundries. The central part of a fab is the clean room, an area where the environment is controlled to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanoelectronic
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics. Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm. Recent silicon MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET (fin field-effect transistor) generations. Nanoelectronics is sometimes considered as disruptive technology because present candidates are significantly different from ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Multi-gate
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's law (in its narrow, specific version concerning density scaling, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
KAIST
The Korea Advanced Institute of Science and Technology (KAIST) is a national research university located in Daedeok Innopolis, Daejeon, South Korea. KAIST was established by the Korean government in 1971 as the nation's first public, research-oriented science and engineering institution. KAIST is considered to be one of the most prestigious universities in the nation. KAIST has been internationally accredited in business education, and hosting the Secretariat of the Association of Asia-Pacific Business Schools (AAPBS). KAIST has 10,504 full-time students and 1,342 faculty researchers (as of Fall 2019 Semester) and had a total budget of US$765 million in 2013, of which US$459 million was from research contracts. In 2007, KAIST partnered with international institutions and adopted dual degree programs for its students. Its partner institutions include the Technical University of Denmark, Carnegie Mellon University, the Georgia Institute of Technology, the Technical University of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
PMOS Logic
PMOS or pMOS logic (from p-channel metal–oxide–semiconductor) is a family of digital circuits based on p-channel, enhancement mode metal–oxide–semiconductor field-effect transistors (MOSFETs). In the late 1960s and early 1970s, PMOS logic was the dominant semiconductor technology for large-scale integrated circuits before being superseded by NMOS and CMOS devices. History and application Mohamed Atalla and Dawon Kahng manufactured the first working MOSFET at Bell Labs in 1959. They fabricated both PMOS and NMOS devices but only the PMOS devices were working. It would be more than a decade before contaminants in the manufacturing process (particularly sodium) could be managed well enough to manufacture practical NMOS devices. Compared to the bipolar junction transistor, the only other device available at the time for use in an integrated circuit, the MOSFET offers a number of advantages: *Given semiconductor device fabrication processes of similar precision, a MO ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Die Shrink
The term die shrink (sometimes optical shrink or process shrink) refers to the scaling of metal-oxide-semiconductor (MOS) devices. The act of shrinking a die is to create a somewhat identical circuit using a more advanced fabrication process, usually involving an advance of lithographic nodes. This reduces overall costs for a chip company, as the absence of major architectural changes to the processor lowers research and development costs while at the same time allowing more processor dies to be manufactured on the same piece of silicon wafer, resulting in less cost per product sold. Details Die shrinks are the key to improving price/performance at semiconductor companies such as Samsung, Intel, TSMC, and SK Hynix, and fabless manufacturers such as AMD (including the former ATI), NVIDIA and MediaTek. Examples in the 2000s include the downscaling of the PlayStation 2's Emotion Engine processor from Sony and Toshiba (from 180 nm CMOS in 2000 to 90 nm CMOS in 2003), t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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