P-type semiconductor

P-type semiconductors

P-type semiconductors are created by doping an intrinsic semiconductor with an electron acceptor element during manufacture. The term p-type refers to the positive charge of a hole. As opposed to n-type semiconductors, p-type semiconductors have a larger hole concentration than electron concentration. In p-type semiconductors, holes are the majority carriers and electrons are the minority carriers. A common p-type dopant for silicon is boron or gallium. For p-type semiconductors the Fermi level is below the intrinsic semiconductor and lies closer to the valence band than the conduction band.