Topic summary

NAND flash memory

NAND flash memory

Extracted from the Wikipedia article Flash memory.

3D integrated circuit technology

3D integrated circuit (3D IC) technology stacks integrated circuit (IC) chips vertically into a single 3D IC package. Toshiba introduced 3D IC technology to NAND flash memory in April 2007, when they debuted a 16 GB eMMC compliant (product number THGAM0G7D8DBAI6, often abbreviated THGAM on consumer websites) embedded NAND flash memory package, which was manufactured with eight stacked 2 GB NAND flash chips. In September 2007, Hynix Semiconductor (now SK Hynix) introduced 24-layer 3D IC technology, with a 16 GB flash memory package that was manufactured with 24 stacked NAND flash chips using a wafer bonding process. Toshiba also used an eight-layer 3D IC for their 32 GB THGBM flash package and in 2008. In 2010, Toshiba used a 16-layer 3D IC for their 128 GB THGBM2 flash package, which was manufactured with 16 stacked 8 GB chips. In the 2010s, 3D ICs came into widespread commercial use for NAND flash memory in mobile devices.