Topic summary
MOS memory
Extracted from the Wikipedia article Semiconductor memory.
MOS memory
The advent of the metal–oxide–semiconductor field-effect transistor (MOSFET), invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, enabled the practical use of metal–oxide–semiconductor (MOS) transistors as memory cell storage elements, a function previously served by magnetic cores in computer memory. MOS memory was developed by John Schmidt at Fairchild Semiconductor in 1964. In addition to higher performance, MOS memory was cheaper and consumed less power than magnetic-core memory. This led to MOSFETs eventually replacing magnetic cores as the standard storage elements in computer memory.