14 nm process

The 14 nanometer process refers to a marketing term for the MOSFETtechnology node that is the successor to the 22nm (or 20nm) node. The 14nm was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following 22nm was expected to be 16nm. All 14nm nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar siliconCMOS technology.

Since at least 1997, process nodes have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a 14nm device is fourteen nanometers. For example, TSMC and Samsung's 10 nm processes are somewhere between Intel's 14 nm and 10 nm processes in transistor density, and TSMC's 7 nm processes are dimensionally similar to Intel's 10 nm process.

Samsung Electronics taped out a 14 nm chip in 2014, before manufacturing 10 nm class NAND flash chips in 2013. The same year, SK Hynix began mass-production of 16nm NAND flash, and TSMC began 16nm FinFET production. The following year, Intel began shipping 14nm scale devices to consumers.