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Dynamic random-access memory
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-accesssemiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a microscopic capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors.
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