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7 nm process

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MOSFET technology node In semiconductor manufacturing, the "7 nm" process is a term for the MOSFET technology node following the "10 nm" node, defined by the International Roadmap for Devices and Systems (IRDS), which was preceded by the International Technology Roadmap for Semiconductors (ITRS). It is based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology.

TSMCTSMCAbbreviationTraditional Chinese台積電Websitetsmc.comFootnotesTaiwan Semiconductor Manufacturing Company Limited (Chinese: 台灣積體電路製造股份有限公司; Taiwan Semiconductor or TSMC, stylised in all lowercase) is a Taiwanese multinational semiconductor contract manufacturing and design company. Headquartered in Hsinchu Science Park, it is one of the world's largest non-US companies by market capitalisation.10 nm processIn semiconductor fabrication, the International Technology Roadmap for Semiconductors (ITRS) defines the "10 nanometer process" as the MOSFET technology node following the "14 nm" node. Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a "10nm" device is ten nanometers.International Technology Roadmap for SemiconductorsThe International Technology Roadmap for Semiconductors (ITRS) is a set of documents that was coordinated and organized by Semiconductor Research Corporation and produced by a group of experts in the semiconductor industry. These experts were representative of the sponsoring organisations, including the Semiconductor Industry Associations of Taiwan, South Korea, the United States, Europe, Japan, and China. As of 2017, ITRS is no longer being updated.Semiconductor device fabricationSemiconductor device fabricationManufacturing process used to create integrated circuitsA semiconductor device manufacturing facility at HP LabsSemiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as microprocessors, microcontrollers, and memories (such as RAM and flash memory).Static random-access memoryStatic random-access memoryStatic random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed.MOSFETMOSFETType of field-effect transistorTwo power MOSFETs in D2PAKsurface-mount packages.SamsungSamsungSouth Korean multinational conglomerateSamsung Group (Korean: 삼성; pronounced; stylised as SΛMSUNG) is a South Korean multinational manufacturing conglomerate headquartered in the Samsung Town office complex in Seoul. The group consists of numerous affiliated businesses, most of which operate under the Samsung brand, and is the largest chaebol (family-controlled conglomerates in South Korea). As of 2024, Samsung has the world's fifth-highest brand value.NanometreNanometreThe nanometre (international spelling as used by the International Bureau of Weights and Measures; SI symbol: nm), or nanometer (American spelling), is a unit of length in the International System of Units (SI), equal to one billionth (short scale) or one thousand millionth (long scale) of a metre (0.000000001 m) and to 1000 picometres.International Roadmap for Devices and SystemsThe International Roadmap for Devices and Systems (IRDS) is a set of predictions about likely developments in electronic devices and systems. The IRDS was established in 2016 and is the successor to the International Technology Roadmap for Semiconductors. These predictions are intended to allow coordination of efforts across academia, manufacturers, equipment suppliers, and national research laboratories.Multigate deviceMultigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes.Fin field-effect transistorFin field-effect transistorA fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface.

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