|
Work Function
In solid-state physics, the work function (sometimes spelled workfunction) is the minimum thermodynamic work (i.e., energy) needed to remove an electron from a solid to a point in the vacuum immediately outside the solid surface. Here "immediately" means that the final electron position is far from the surface on the atomic scale, but still too close to the solid to be influenced by ambient electric fields in the vacuum. The work function is not a characteristic of a bulk material, but rather a property of the surface of the material (depending on crystal face and contamination). Definition The work function for a given surface is defined by the difference :W = -e\phi - E_, where is the charge of an electron, is the electrostatic potential in the vacuum nearby the surface, and is the Fermi level (electrochemical potential of electrons) inside the material. The term is the energy of an electron at rest in the vacuum nearby the surface. In practice, one directly controls ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Solid-state Physics
Solid-state physics is the study of rigid matter, or solids, through methods such as solid-state chemistry, quantum mechanics, crystallography, electromagnetism, and metallurgy. It is the largest branch of condensed matter physics. Solid-state physics studies how the large-scale properties of solid materials result from their atomic-scale properties. Thus, solid-state physics forms a theoretical basis of materials science. Along with solid-state chemistry, it also has direct applications in the technology of transistors and semiconductors. Background Solid materials are formed from densely packed atoms, which interact intensely. These interactions produce the mechanical (e.g. hardness and Elasticity (physics), elasticity), Heat conduction, thermal, Electrical conduction, electrical, Magnetism, magnetic and Crystal optics, optical properties of solids. Depending on the material involved and the conditions in which it was formed, the atoms may be arranged in a regular, geometric patt ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tungsten
Tungsten (also called wolfram) is a chemical element; it has symbol W and atomic number 74. It is a metal found naturally on Earth almost exclusively in compounds with other elements. It was identified as a distinct element in 1781 and first isolated as a metal in 1783. Its important ores include scheelite and wolframite, the latter lending the element its alternative name. The free element is remarkable for its robustness, especially the fact that it has the highest melting point of all known elements, melting at . It also has the highest boiling point, at . Its density is 19.254 g/cm3, comparable with that of uranium and gold, and much higher (about 1.7 times) than that of lead. Polycrystalline tungsten is an intrinsically brittle and hard material (under standard conditions, when uncombined), making it difficult to work into metal. However, pure single-crystalline tungsten is more ductile and can be cut with a hard-steel hacksaw. Tungsten occurs in many alloys ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field Electron Emission
Field electron emission, also known as field-induced electron emission, field emission (FE) and electron field emission, is the emission of electrons from a material placed in an electrostatic field. The most common context is field emission from a solid surface into a vacuum. However, field emission can take place from solid or liquid surfaces, into a vacuum, a fluid (e.g. air), or any non-conducting or weakly conducting dielectric. The field-induced promotion of electrons from the valence (chemistry), valence to conduction band of semiconductors (the Zener effect) can also be regarded as a form of field emission. Field emission in pure metals occurs in high electric fields: the gradients are typically higher than 1 gigavolt per metre and strongly dependent upon the work function. While electron sources based on field emission have a number of applications, field emission is most commonly an undesirable primary source of electrical breakdown, vacuum breakdown and electrical disch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Surface Charge
A surface charge is an electric charge present on a two-dimensional surface. These electric charges are constrained on this 2-D surface, and surface charge density, measured in coulombs per square meter (C•m−2), is used to describe the charge distribution on the surface. The electric potential is Continuous function, continuous across a surface charge and the electric field is Classification of discontinuities, discontinuous, but not infinite; this is unless the surface charge consists of a dipole layer. In comparison, the potential and electric field both diverge at any point charge or linear charge. In physics, at equilibrium, an ideal Electrical conductor, conductor has no charge on its interior; instead, the entirety of the charge of the conductor resides on the surface. However, this only applies to the ideal case of infinite Electrical resistivity and conductivity, electrical conductivity; the majority of the charge of an actual conductor resides within the Skin effect, s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Contact Electrification
The triboelectric effect (also known as triboelectricity, triboelectric charging, triboelectrification, or tribocharging) describes electric charge transfer between two objects when they contact or slide against each other. It can occur with different materials, such as the sole of a shoe on a carpet, or between two pieces of the same material. It is ubiquitous, and occurs with differing amounts of charge transfer (tribocharge) for all solid materials. There is evidence that tribocharging can occur between combinations of solids, liquids and gases, for instance liquid flowing in a solid tube or an aircraft flying through air. Often static electricity is a consequence of the triboelectric effect when the charge stays on one or both of the objects and is not conducted away. The term triboelectricity has been used to refer to the field of study or the general phenomenon of the triboelectric effect, or to the static electricity that results from it. When there is no sliding, triboc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gravity Probe B
Gravity Probe B (GP-B) was a satellite-based experiment whose objective was to test two previously-unverified predictions of general relativity: the geodetic effect and frame-dragging. This was to be accomplished by measuring, very precisely, tiny changes in the direction of spin of four gyroscopes contained in an Earth-orbiting satellite at of altitude, crossing directly over the poles. The satellite was launched on 20 April 2004 on a Delta II rocket. The spaceflight phase lasted until 2005; Its aim was to measure spacetime curvature near Earth, and thereby the stress–energy tensor (which is related to the distribution and the motion of matter in space) in and near Earth. This provided a test of general relativity, gravitomagnetism and related models. The principal investigator was Francis Everitt. Initial results confirmed the expected geodetic effect to an accuracy of about 1%. The expected frame-dragging effect was similar in magnitude to the current noise level (the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Casimir Force
In quantum field theory, the Casimir effect (or Casimir force) is a physical force acting on the macroscopic boundaries of a confined space which arises from the quantum fluctuations of a field. The term Casimir pressure is sometimes used when it is described in units of force per unit area. It is named after the Dutch physicist Hendrik Casimir, who predicted the effect for electromagnetic systems in 1948. In the same year Casimir, together with Dirk Polder, described a similar effect experienced by a neutral atom in the vicinity of a macroscopic interface which is called the Casimir–Polder force. Their result is a generalization of the London–van der Waals force and includes retardation due to the finite speed of light. The fundamental principles leading to the London–van der Waals force, the Casimir force, and the Casimir–Polder force can be formulated on the same footing. In 1997 a direct experiment by Steven K. Lamoreaux quantitatively measured the Casimir for ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Herbert Kroemer
Herbert Kroemer (; August 25, 1928 – March 8, 2024) was a German-American physicist who, along with Zhores Alferov, received the Nobel Prize in Physics in 2000 for "developing semiconductor heterostructures used in high-speed- and opto-electronics". Kroemer was professor emeritus of electrical and computer engineering at the University of California, Santa Barbara, having received his Ph.D. in theoretical physics in 1952 from the University of Göttingen, Germany, with a dissertation on hot electron effects in the then-new transistor. His research into transistors was a stepping stone to the later development of mobile phone technologies. Early life Born to a working-class family in Weimar, Germany, Kroemer excelled in physics at school, letting him advance faster than his peers in the subject. Career Kroemer worked in a number of research laboratories in Germany and the United States and taught electrical engineering at the University of Colorado from 1968 to 1976. He joined ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Anderson's Rule
Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). It is also referred to as the electron affinity rule, and is closely related to the Schottky–Mott rule for metal–semiconductor junctions. Anderson's rule was first described by R. L. Anderson in 1960. Constructing energy band diagrams Once the vacuum levels are aligned it is possible to use the electron affinity and band gap values for each semiconductor to calculate the conduction band and valence band offsets. The electron affinity (usually given by the symbol \chi in solid state physics) gives the energy difference between the lower edge of the conduction band and the vacuum level of the semiconductor. The band gap (usually given the symbol E_) gives ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heterojunction
A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especially on small length scales, where electronic properties depend on spatial properties. A more modern definition of heterojunction is the interface between any two solid-state materials, including crystalline and amorphous structures of metallic, insulating, fast ion conductor and semiconducting materials. Manufacture and applications Heterojunction manufacturing generally requires the use o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Schottky Barrier
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifier, rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB (see figure). The value of ΦB depends on the combination of metal and semiconductor. Not all metal–semiconductor junctions form a rectifying Schottky barrier; a metal–semiconductor junction that conducts current in both directions without rectification, perhaps due to its Schottky barrier being too low, is called an ohmic contact. Physics of formation When a metal is put in direct contact with a semiconductor, a so called Schottky barrier can be formed, leading to a rectifying behavior of the electrical contact. This happens both when the semiconductor is N-type (semiconductor), n-type and its work function is smaller than the work functio ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
