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Tunnel Diode
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively " negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony. In the first public report of the discovery (presentation at the 12th annual meeting of the Physical Society of Japan in October 1957), Takashi Suzuki, who was a student at Tokyo University of Science and doing his internship at Tokyo Tsushin Kogyo under Esaki's supervision, was a co-author. Suzuki, along with Yuriko Kurose, first observed the negative differential resistance when they were testing heavily doped P-N junctions. In 1973, Esaki received the Nobel Prize in Physics for experimental demonstration of the electron tunneling effect in semiconductors. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tun ...
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Jumper (computing)
In electronics and particularly computing, a jumper is a short length of conductor used to close, open or bypass part of an electronic circuit. They are typically used to set up or configure printed circuit boards, such as the motherboards of computers. The process of setting a jumper is often called strapping. A strapping option is a hardware configuration setting usually sensed only during power-up or bootstrapping of a device (or even a single chip). Design Jumper pins (points to be connected by the jumper) are arranged in groups called ''jumper blocks'', each group having at least one pair of contact points. An appropriately sized conductive sleeve itself called a jumper, or more technically, a shunt (electrical), shunt jumper, is slipped over the pins to complete the circuit. A two-pin jumper only allows to choose between two Boolean states, whereas a three-pin jumper allows to select between three states. Jumpers must be electrically electrical conductor, conducting; ...
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William Shockley
William Bradford Shockley ( ; February 13, 1910 – August 12, 1989) was an American solid-state physicist, electrical engineer, and inventor. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Houser Brattain. The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect". Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s, California's Silicon Valley became a hotbed of electronics innovation. He recruited brilliant employees, but quickly alienated them with his autocratic and erratic management; they left and founded major companies in the industry. In his later life, while a professor of electrical engineering at Stanford University and afterward, Shockley became known as a Racism, racist and Eugenics, eugenicist. Early life and education Shockley was born to American parents in Londo ...
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Silicon
Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid (sometimes considered a non-metal) and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Silicon is a significant element that is essential for several physiological and metabolic processes in plants. Silicon is widely regarded as the predominant semiconductor material due to its versatile applications in various electrical devices such as transistors, solar cells, integrated circuits, and others. These may be due to its significant band gap, expansive optical transmission range, extensive absorption spectrum, surface roughening, and effective anti-reflection coating. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to p ...
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Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. History Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 Â°C. The semiconductor properties of GaAs and other Compound semiconductor, III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 and described in a 1952 publication. Commercial production of its monocrystals commenced in 1954, and more studies followed in the 195 ...
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Germanium
Germanium is a chemical element; it has Symbol (chemistry), symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid or a nonmetal in the carbon group that is chemically similar to silicon. Like silicon, germanium naturally Chemical reaction, reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was found comparatively late in the Timeline of chemical element discoveries, discovery of the elements. Germanium ranks 50th Abundance of elements in Earth's crust, in abundance of the elements in the Earth's crust. In 1869, Dmitri Mendeleev Mendeleev's predicted elements, predicted its existence and some of its Chemical property, properties from its position on his periodic table, and called the element ekasilicon. On February 6, 1886, Clemens Winkler at Freiberg University found the new element, along with silver and sulfur, in the mineral argyrodite. Winkle ...
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Electron Hole
In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle denoting the lack of an electron at a position where one could exist in an atom or crystal structure, atomic lattice. Since in a normal atom or crystal lattice the negative charge of the electrons is balanced by the positive charge of the atomic nucleus, atomic nuclei, the absence of an electron leaves a net positive charge at the hole's location. Holes in a metal or semiconductor crystal lattice can move through the lattice as electrons can, and act similarly to electric charge, positively-charged particles. They play an important role in the operation of semiconductor devices such as transistors, diodes (including light-emitting diodes) and integrated circuits. If an electron is excited into a higher state it leaves a hole in its old state. This meaning is used in Auger electron spectroscopy (and other x-ray techniques), in computational chemistry, and to explai ...
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Valence Band
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a semiconducting material, the valence band is located below the Fermi level, while the conduction band is located above it. The distinction between the valence and conduction bands is meaningless in metals, because conduction occurs in one or more partially filled bands that take on the properties of both the valence and conduction bands. Band gap In semiconductors and insulators the two bands are separated by a band gap, while in conductors the bands overlap. A band gap is an energy range in a solid where no electron states can exist due to th ...
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Electron Configuration
In atomic physics and quantum chemistry, the electron configuration is the distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals. For example, the electron configuration of the neon atom is , meaning that the 1s, 2s, and 2p subshells are occupied by two, two, and six electrons, respectively. Electronic configurations describe each electron as moving independently in an orbital, in an average field created by the nuclei and all the other electrons. Mathematically, configurations are described by Slater determinants or configuration state functions. According to the laws of quantum mechanics, a level of energy is associated with each electron configuration. In certain conditions, electrons are able to move from one configuration to another by the emission or absorption of a quantum of energy, in the form of a photon. Knowledge of the electron configuration of different atoms is useful in understanding the structu ...
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Conduction Band
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a semiconducting material, the valence band is located below the Fermi level, while the conduction band is located above it. The distinction between the valence and conduction bands is meaningless in metals, because conduction occurs in one or more partially filled bands that take on the properties of both the valence and conduction bands. Band gap In semiconductors and insulators the two bands are separated by a band gap, while in conductors the bands overlap. A band gap is an energy range in a solid where no electron states can exist due to ...
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Band Gap
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron (and the electron hole in the valence band) are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there ...
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Ångström
The angstrom (; ) is a unit of length equal to m; that is, one ten-billionth of a metre, a hundred-millionth of a centimetre, 0.1 nanometre, or 100 picometres. The unit is named after the Swedish physicist Anders Jonas Ångström (1814–1874). It was originally spelled with Swedish letters, as Ångström and later as ångström (). The latter spelling is still listed in some dictionaries, but is now rare in English texts. Some popular US dictionaries list only the spelling ''angstrom''. The unit's symbol is Å, which is a letter of the Swedish alphabet, regardless of how the unit is spelled. However, "A" or "A.U." may be used in less formal contexts or typographically limited media. The angstrom is often used in the natural sciences and technology to express sizes of atoms, molecules, microscopic biological structures, and lengths of chemical bonds, arrangement of atoms in crystals, wavelengths of electromagnetic radiation, and dimensions of integrated circuit part ...
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