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Hot-carrier Injection
Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state. The term "hot" refers to the effective temperature used to model carrier density, not to the overall temperature of the device. Since the charge carriers can become trapped in the gate dielectric of a MOS transistor, the switching characteristics of the transistor can be permanently changed. Hot-carrier injection is one of the mechanisms that adversely affects the reliability of semiconductors of solid-state devices. Physics The term “hot carrier injection” usually refers to the effect in MOSFETs, where a carrier is injected from the conducting channel in the silicon substrate to the gate dielectric, which usually is made of silicon dioxide (SiO2). To become “hot” and enter the conduction band of SiO2, an electron must gain a kinetic energy of ~3.2&n ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Solid State (electronics)
Solid-state electronics are semiconductor electronics: electronic equipment that use semiconductor devices such as transistors, diodes and integrated circuits (ICs). The term is also used as an adjective for devices in which semiconductor electronics that have no moving parts replace devices with moving parts, such as the solid-state relay, in which transistor switches are used in place of a moving-arm electromechanical relay, or the solid-state drive (SSD), a type of semiconductor memory used in computers to replace hard disk drives, which store data on a rotating disk. History The term ''solid-state'' became popular at the beginning of the semiconductor era in the 1960s to distinguish this new technology. A semiconductor device works by controlling an electric current consisting of electrons or electron hole, holes moving within a solid crystalline piece of semiconductor, semiconducting material such as silicon, while the thermionic vacuum tubes it replaced worked by controll ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Hole
In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle denoting the lack of an electron at a position where one could exist in an atom or crystal structure, atomic lattice. Since in a normal atom or crystal lattice the negative charge of the electrons is balanced by the positive charge of the atomic nucleus, atomic nuclei, the absence of an electron leaves a net positive charge at the hole's location. Holes in a metal or semiconductor crystal lattice can move through the lattice as electrons can, and act similarly to electric charge, positively-charged particles. They play an important role in the operation of semiconductor devices such as transistors, diodes (including light-emitting diodes) and integrated circuits. If an electron is excited into a higher state it leaves a hole in its old state. This meaning is used in Auger electron spectroscopy (and other x-ray techniques), in computational chemistry, and to explai ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gamma Ray
A gamma ray, also known as gamma radiation (symbol ), is a penetrating form of electromagnetic radiation arising from high energy interactions like the radioactive decay of atomic nuclei or astronomical events like solar flares. It consists of the shortest wavelength electromagnetic waves, typically shorter than those of X-rays. With frequencies above 30 exahertz () and wavelengths less than 10 picometers (), gamma ray photons have the highest photon energy of any form of electromagnetic radiation. Paul Villard, a French chemist and physicist, discovered gamma radiation in 1900 while studying radiation emitted by radium. In 1903, Ernest Rutherford named this radiation ''gamma rays'' based on their relatively strong penetration of matter; in 1900, he had already named two less penetrating types of decay radiation (discovered by Henri Becquerel) alpha rays and beta rays in ascending order of penetrating power. Gamma rays from radioactive decay are in the energy range ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
X-ray
An X-ray (also known in many languages as Röntgen radiation) is a form of high-energy electromagnetic radiation with a wavelength shorter than those of ultraviolet rays and longer than those of gamma rays. Roughly, X-rays have a wavelength ranging from 10 Nanometre, nanometers to 10 Picometre, picometers, corresponding to frequency, frequencies in the range of 30 Hertz, petahertz to 30 Hertz, exahertz ( to ) and photon energies in the range of 100 electronvolt, eV to 100 keV, respectively. X-rays were discovered in 1895 in science, 1895 by the German scientist Wilhelm Röntgen, Wilhelm Conrad Röntgen, who named it ''X-radiation'' to signify an unknown type of radiation.Novelline, Robert (1997). ''Squire's Fundamentals of Radiology''. Harvard University Press. 5th edition. . X-rays can penetrate many solid substances such as construction materials and living tissue, so X-ray radiography is widely used in medical diagnostics (e.g., checking for Bo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Proton
A proton is a stable subatomic particle, symbol , Hydron (chemistry), H+, or 1H+ with a positive electric charge of +1 ''e'' (elementary charge). Its mass is slightly less than the mass of a neutron and approximately times the mass of an electron (the proton-to-electron mass ratio). Protons and neutrons, each with a mass of approximately one Dalton (unit), dalton, are jointly referred to as ''nucleons'' (particles present in atomic nuclei). One or more protons are present in the Atomic nucleus, nucleus of every atom. They provide the attractive electrostatic central force which binds the atomic electrons. The number of protons in the nucleus is the defining property of an element, and is referred to as the atomic number (represented by the symbol ''Z''). Since each chemical element, element is identified by the number of protons in its nucleus, each element has its own atomic number, which determines the number of atomic electrons and consequently the chemical characteristi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Radiation Hardening
Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation (particle radiation and high-energy electromagnetic radiation), especially for environments in outer space (especially beyond low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare. Most Semiconductor device, semiconductor electronic components are susceptible to radiation damage, and radiation-hardened (rad-hard) components are based on their non-hardened equivalents, with some design and manufacturing variations that reduce the susceptibility to radiation damage. Due to the low demand and the extensive development and testing required to produce a radiation-tolerant design of a microelectronics, microelectronic chip, the technology of radiation-hardened chips tends to lag behind the most recent developments. They also typically cost more than their commercial cou ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
SOI MOSFET
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. Industry need SOI technology is one of several manufacturing strategies to allow the continued miniaturization of microelectronic devices, colloquially referred to a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon On Insulator
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. Industry need SOI technology is one of several manufacturing strategies to allow the continued miniaturization of microelectronic devices, colloquially referred to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Velocity Saturation
Saturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a charge carrier can not move any faster, having reached its saturation velocity, due to mechanisms that eventually limit the movement of the carriers in the material. As the applied electric field increases from that point, the carrier velocity no longer increases becaus ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Parasitic Capacitance
Parasitic capacitance or stray capacitance is the unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other. When two electrical conductors at different voltages are close together, the electric field between them causes electric charge to be stored on them; this effect is capacitance. All practical circuit elements such as inductors, diodes, and transistors have internal capacitance, which can cause their behavior to depart from that of ideal circuit elements. Additionally, there is always some capacitance between any two conductors; this can be significant with closely spaced conductors, such as adjacent wires or printed circuit board traces. The parasitic capacitance between the turns of an inductor (e.g. Figure 1) or other wound component is often described as ''self-capacitance''. However, in electromagnetics, the term self-capacitance more correctly refers to a diffe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Subthreshold Slope
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour—though being controlled by the gate A gate or gateway is a point of entry to or from a space enclosed by walls. The word is derived from Proto-Germanic language, Proto-Germanic ''*gatan'', meaning an opening or passageway. Synonyms include yett (which comes from the same root w ... terminal—is similar to the exponentially decreasing current of a forward biased diode. Therefore, a plot of drain current versus gate voltage with drain, source, and bulk voltages fixed will exhibit approximately log-linear behaviour in this MOSFET operating regime. Its slope is the subthreshold slope. The subthreshold slope is also the reciprocal value of the subthreshold swing ''Ss-th'' which is usually given as:''Physics of Semiconductor Devices'', S. M. Sze. New York: Wiley, 3rd ed., with Kwok K. Ng, 2007, chapter 6.2.4, p. 315, . ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behavior under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor. With no VGS, dopant ions added to the body of the FET form a region ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
