|
Chemical Field-effect Transistor
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations in solution. When the target analyte concentration changes, the current through the transistor will change accordingly. Here, the analyte solution separates the source and gate electrodes. A concentration gradient between the solution and the gate electrode arises due to a semi-permeable membrane on the FET surface containing receptor moieties that preferentially bind the target analyte. This concentration gradient of charged analyte ions creates a chemical potential between the source and gate, which is in turn measured by the FET. Construction A ChemFET's source and drain are constructed as for an ISFET, with the gate electrode separated from the source electrode by a solution. The gate electrode's interface with the solution is a semi-permeable membrane containing the receptors, and a gap to allow the substance under test to c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs ( JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metal Gate
A metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid 1970s, the "M" for metal has been replaced by a non-metal gate material. Aluminum gate The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. They used silicon as channel material and a non-self-aligned aluminum gate. Aluminum gate metal (typically deposited in an evaporation vacuum chamber onto the wafer surface) was common through the early 1970s. Polysilicon By the late 1970s, the industry had moved away from aluminum as the gate material in the metal–oxide–semiconductor stack due to fabrication complications and performance issues. A material called polysilicon ( polycrystalline silicon, highly doped with donors o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFETs
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in watt.html" ;"title="amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Measuring Instruments
A measuring instrument is a device to measure a physical quantity. In the physical sciences, quality assurance, and engineering, measurement is the activity of obtaining and comparing physical quantities of real-world objects and events. Established standard objects and events are used as units, and the process of measurement gives a number relating the item under study and the referenced unit of measurement. Measuring instruments, and formal test methods which define the instrument's use, are the means by which these relations of numbers are obtained. All measuring instruments are subject to varying degrees of instrument error and measurement uncertainty. These instruments may range from simple objects such as rulers and stopwatches to electron microscopes and particle accelerators. Virtual instrumentation is widely used in the development of modern measuring instruments. Time In the past, a common time measuring instrument was the sundial. Today, the usual measu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistors The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs ( JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 192 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
.jpg "Click for more on -> Field-effect Transistors")