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Insulated-gate Bipolar Transistor
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a " MOS" gate ( MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs) for motor control in electric cars, trains, variable-speed refrigerators, and air conditioners, as well as lamp ballasts, arc-welding machines, photovoltaic and hybrid inverters, uninterruptible power supply systems (UPS), and induction stoves. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material with electrical conductivity between that of a conductor and an insulator. Its conductivity can be modified by adding impurities (" doping") to its crystal structure. When two regions with different doping levels are present in the same crystal, they form a semiconductor junction. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called " metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits. Semiconductor devices can display a range of different useful properties, such as passing current more easil ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Control System
A control system manages, commands, directs, or regulates the behavior of other devices or systems using control loops. It can range from a single home heating controller using a thermostat controlling a domestic boiler to large industrial control systems which are used for controlling processes or machines. The control systems are designed via control engineering process. For continuously modulated control, a feedback controller is used to automatically control a process or operation. The control system compares the value or status of the process variable (PV) being controlled with the desired value or setpoint (SP), and applies the difference as a control signal to bring the process variable output of the plant to the same value as the setpoint. For sequential and combinational logic, software logic, such as in a programmable logic controller, is used. Open-loop and closed-loop control Feedback control systems Logic control Logic control systems for indus ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metal–oxide–semiconductor Field-effect Transistor
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
General Electric
General Electric Company (GE) was an American Multinational corporation, multinational Conglomerate (company), conglomerate founded in 1892, incorporated in the New York (state), state of New York and headquartered in Boston. Over the years, the company had multiple divisions, including GE Aerospace, aerospace, GE Power, energy, GE HealthCare, healthcare, lighting, locomotives, appliances, and GE Capital, finance. In 2020, GE ranked among the Fortune 500, ''Fortune'' 500 as the 33rd largest firm in the United States by gross revenue. In 2023, the company was ranked 64th in the Forbes Global 2000, ''Forbes'' Global 2000. In 2011, GE ranked among the Fortune 20 as the 14th most profitable company, but later very severely underperformed the market (by about 75%) as its profitability collapsed. Two employees of GE—Irving Langmuir (1932) and Ivar Giaever (1973)—have been awarded the Nobel Prize. From 1986 until 2013, GE was the owner of the NBC television network through its ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
William Shockley
William Bradford Shockley ( ; February 13, 1910 – August 12, 1989) was an American solid-state physicist, electrical engineer, and inventor. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Houser Brattain. The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect". Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s, California's Silicon Valley became a hotbed of electronics innovation. He recruited brilliant employees, but quickly alienated them with his autocratic and erratic management; they left and founded major companies in the industry. In his later life, while a professor of electrical engineering at Stanford University and afterward, Shockley became known as a Racism, racist and Eugenics, eugenicist. Early life and education Shockley was born to American parents in Londo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Walter Brattain
Walter Houser Brattain (; February 10, 1902 – October 13, 1987) was an American solid-state physicist who shared the 1956 Nobel Prize in Physics with John Bardeen and William Shockley for their invention of the point-contact transistor. Brattain devoted much of his life to research on surface states. Biography Walter Brattain was born in Amoy (now Xiamen), Fujian, Qing China, to American parents Ross R. Brattain and Ottilie Houser Brattain. His father was of Scottish descent, while his mother's parents were both immigrants from Stuttgart, Germany. Ross R. Brattain was a teacher at the Ting-Wen Institute, a private school for Chinese boys; Ottilie Houser Brattain was a gifted mathematician. Both were graduates of Whitman College. Ottilie and baby Walter returned to the United States in 1903, and Ross followed shortly afterward. The family lived for several years in Spokane, Washington, then settled on a cattle ranch near Tonasket, Washington in 1911. Brattain attended high ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
John Bardeen
John Bardeen (; May 23, 1908 – January 30, 1991) was an American solid-state physicist. He is the only person to be awarded the Nobel Prize in Physics twice: first in 1956 with William Shockley and Walter Houser Brattain for their invention of the transistor; and again in 1972 with Leon Cooper and John Robert Schrieffer for their fundamental theory of superconductivity, known as the BCS theory. Born and raised in Wisconsin, Bardeen received a Ph.D. in physics from Princeton University. After serving in World War II, he was a researcher at Bell Labs and a professor at the University of Illinois. The transistor revolutionized the electronics industry, making possible the development of almost every modern electronic device, from telephones to computers, and ushering in the Information Age. Bardeen's developments in superconductivity—for which he was awarded his second Nobel Prize—are used in nuclear magnetic resonance spectroscopy (NMR), medical magnetic resonance ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bell Telephone Laboratories
Nokia Bell Labs, commonly referred to as ''Bell Labs'', is an American industrial research and development company owned by Finnish technology company Nokia. With headquarters located in Murray Hill, New Jersey, Murray Hill, New Jersey, the company operates several laboratories in the United States and around the world. As a former subsidiary of the American Telephone and Telegraph Company (AT&T), Bell Labs and its researchers have been credited with the development of radio astronomy, the transistor, the laser, the photovoltaic cell, the charge-coupled device (CCD), information theory, the Unix operating system, and the programming languages B (programming language), B, C (programming language), C, C++, S (programming language), S, SNOBOL, AWK, AMPL, and others, throughout the 20th century. Eleven Nobel Prizes and five Turing Awards have been awarded for work completed at Bell Laboratories. Bell Labs had its origin in the complex corporate organization of the Bell System telepho ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Computer History Museum
The Computer History Museum (CHM) is a computer museum in Mountain View, California. The museum presents stories and artifacts of Silicon Valley and the Information Age, and explores the Digital Revolution, computing revolution and its impact on society. History The museum's origins date to 1968 when Gordon Bell began a quest for a historical collection and, at that same time, others were looking to preserve the Whirlwind (computer), Whirlwind computer. The resulting ''Museum Project'' had its first exhibit in 1975, located in a converted coat closet in a Digital Equipment Corporation, DEC lobby. In 1978, the museum, now ''The Digital Computer Museum'' (TDCM), moved to a larger DEC lobby in Marlborough, Massachusetts and opened to the public in September 1979. Maurice Wilkes presented the first lecture at TDCM in 1979 – the presentation of such lectures has continued to the present time. TDCM incorporated as ''The Computer Museum, Boston, The Computer Museum'' (TCM) in 1982. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current between the remaining two terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused trans ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IGBT Cross Section
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a " MOS" gate ( MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs) for motor control in electric cars, trains, variable-speed refrigerators, and air conditioners, as well as lamp ballasts, arc-welding machines, photovoltaic and hybrid inverters, uninterruptible power supply systems (UPS), and induction stoves. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Power MOSFET
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to be higher than the voltage under control. The design of power MOSFETs was made possible by the evolution of MOSFET and CMOS technology, used for manufacturing integrated circuits since the 1960s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET. The power MOSFET, which is commonly used in power electronics, was adapted from the standard MOSFET and commercially introduced in the 1970s. The power MOSFET is the most common power semicond ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
