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Hydrogen Sensor
A hydrogen sensor is a gas detector that detects the presence of hydrogen. They contain micro-fabricated point-contact hydrogen sensors and are used to locate hydrogen leaks. They are considered low-cost, compact, durable, and easy to maintain as compared to conventional gas detecting instruments. Key issues There are five key issues with hydrogen detectors: * Reliability: Functionality should be easily verifiable. * Performance: Detection 0.5% hydrogen in air or better * Response time < 1 second. * Lifetime: At least the time between scheduled maintenance. * : Goal is $5 per sensor and $30 per controller.


Additional requirements

* Measurement range coverage of 0.1–10.0% concentration * Operation in temperatures of −30 °C to 80 °C * Accuracy within ...
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Greg Glatzmaier Determines The High-temperature Thermal And Mechanical Stability Of Sealants Used In A Lab Prototype Of The Integrated Hydrogen Sensor Separator Module
Greg is a masculine given name, and often a shortened form of the given name Gregory (given name), Gregory. Greg (more commonly spelled "Gregg (surname), Gregg") is also a surname. People with the name *Greg Abbott (other), multiple people *Greg Abel (born 1961/1962), Canadian businessman *Greg Adams (other), multiple people *Greg Allen (other), multiple people *Greg Anderson (other), multiple people *Greg Austin (other), multiple people *Greg Ball (other), multiple people *Greg Bell (other), multiple people *Greg Bennett (other), multiple people *Greg Berlanti (born 1972), American writer and producer *Greg Biffle (born 1969), American NASCAR driver *Greg Blankenship (born 1954), American football player *Greg Boyd (other), multiple people *Greg Boyer (other), multiple people *Greg Brady (broadcaster) (born 1971), Canadian sports radio host *Greg Brock (baseball) (born 1957), American baseball ...
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Fiber Bragg Grating
A fiber Bragg grating (FBG) is a type of distributed Bragg reflector constructed in a short segment of optical fiber that reflects particular wavelengths of light and transmits all others. This is achieved by creating a periodic variation in the refractive index of the fiber core, which generates a wavelength-specific dielectric mirror. Hence a fiber Bragg grating can be used as an inline optical fiber to block certain wavelengths, can be used for sensing applications, or it can be used as wavelength-specific reflector. History The first in-fiber Bragg grating was demonstrated by Ken Hill in 1978. Initially, the gratings were fabricated using a visible laser propagating along the fiber core. In 1989, Gerald Meltz and colleagues demonstrated the much more flexible transverse holographic inscription technique where the laser illumination came from the side of the fiber. This technique uses the interference pattern of ultraviolet laser light to create the periodic structure of ...
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Schottky Energy Barrier
Notable people named Schottky include: * Ernst Max Schottky, botanist * Walter H. Schottky, physicist * Friedrich Schottky, mathematician Other links: * Schottky diode and Schottky barrier in electronics and physics * Schottky transistor in electronics * Schottky group in mathematics * Schottky defect in condensed matter physics * Schottky anomaly in condensed matter physics * Schottky noise in electronics, described mathematically by Walter H. Schottky, and also known as shot noise Shot noise or Poisson noise is a type of noise which can be modeled by a Poisson process. In electronics shot noise originates from the discrete nature of electric charge. Shot noise also occurs in photon counting in optical devices, where shot ...
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Field Effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 1925 an ...
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Schottky Diode
The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes. When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency. History Walter H. Schottky (1886–1976) in 1914, discovered an irregularity in the emission of thermions in a vacuum tube, now known as the Schottky effect. Construction A metal–semiconductor junction is formed between a metal ...
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Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ...
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Thin Film
A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The process of silvering was once commonly used to produce mirrors, while more recently the metal layer is deposited using techniques such as sputtering. Advances in thin film deposition techniques during the 20th century have enabled a wide range of technological breakthroughs in areas such as magnetic recording media, electronic semiconductor devices, integrated passive devices, LEDs, optical coatings (such as antireflective coatings), hard coatings on cutting tools, and for both energy generation (e.g. thin-film solar cells) and storage ( thin-film batteries). It is also being ...
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Nanomechanical Resonator
A nanomechanical resonator is a nanoelectromechanical systems ultra-small resonator that oscillates at a specific frequency depending on its mass and stiffness. See also *Quartz crystal microbalance *Atomic force microscopy Atomic force microscopy (AFM) or scanning force microscopy (SFM) is a very-high-resolution type of scanning probe microscopy (SPM), with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the op ... References Further reading * * Nanoelectronics {{Physics-stub ...
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Tin Oxide
Tin is a chemical element with the symbol Sn (from la, stannum) and atomic number 50. Tin is a silvery-coloured metal. Tin is soft enough to be cut with little force and a bar of tin can be bent by hand with little effort. When bent, the so-called "tin cry" can be heard as a result of twinning in tin crystals; this trait is shared by indium, cadmium, zinc, and mercury in the solid state. Pure tin after solidifying presents a mirror-like appearance similar to most metals. In most tin alloys (such as pewter) the metal solidifies with a dull gray color. Tin is a post-transition metal in group 14 of the periodic table of elements. It is obtained chiefly from the mineral cassiterite, which contains Tin(IV) oxide, stannic oxide, . Tin shows a chemical similarity to both of its neighbors in group 14, germanium and lead, and has two main oxidation states, +2 and the slightly more stable +4. Tin is the 49th most abundant element on Earth and has, with 10 stable isotopes, ...
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Indium(III) Oxide
Indium(III) oxide ( In2 O3) is a chemical compound, an amphoteric oxide of indium. Physical properties Crystal structure Amorphous indium oxide is insoluble in water but soluble in acids, whereas crystalline indium oxide is insoluble in both water and acids. The crystalline form exists in two phases, the cubic (bixbyite type) and rhombohedral ( corundum type). Both phases have a band gap of about 3 eV. The parameters of the cubic phase are listed in the infobox. The rhombohedral phase is produced at high temperatures and pressures or when using non-equilibrium growth methods. It has a space group Rc No. 167, Pearson symbol hR30, a = 0.5487 nm, b = 0.5487 nm, c = 1.4510 nm, Z = 6 and calculated density 7.31 g/cm3. Conductivity and magnetism Thin films of chromium- doped indium oxide (In2−xCrxO3) are a magnetic semiconductor displaying high-temperature ferromagnetism, single-phase crystal structure, and semiconductor behavior with high concentration of charge car ...
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Microelectromechanical Systems
Microelectromechanical systems (MEMS), also written as micro-electro-mechanical systems (or microelectronic and microelectromechanical systems) and the related micromechatronics and microsystems constitute the technology of microscopic devices, particularly those with moving parts. They merge at the nanoscale into nanoelectromechanical systems (NEMS) and nanotechnology. MEMS are also referred to as micromachines in Japan and microsystem technology (MST) in Europe. MEMS are made up of components between 1 and 100 micrometers in size (i.e., 0.001 to 0.1 mm), and MEMS devices generally range in size from 20 micrometres to a millimetre (i.e., 0.02 to 1.0 mm), although components arranged in arrays (e.g., digital micromirror devices) can be more than 1000 mm2. They usually consist of a central unit that processes data (an integrated circuit chip such as microprocessor) and several components that interact with the surroundings (such as microsensors). Because of the la ...
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Nanotechnology
Nanotechnology, also shortened to nanotech, is the use of matter on an atomic, molecular, and supramolecular scale for industrial purposes. The earliest, widespread description of nanotechnology referred to the particular technological goal of precisely manipulating atoms and molecules for fabrication of macroscale products, also now referred to as molecular nanotechnology. A more generalized description of nanotechnology was subsequently established by the National Nanotechnology Initiative, which defined nanotechnology as the manipulation of matter with at least one dimension sized from 1 to 100 nanometers (nm). This definition reflects the fact that quantum mechanical effects are important at this quantum-realm scale, and so the definition shifted from a particular technological goal to a research category inclusive of all types of research and technologies that deal with the special properties of matter which occur below the given size threshold. It is therefore common to ...
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