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Avalanche Photodiode
An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via the photovoltaic effect. APDs use materials and a structure optimised for operating with high reverse bias voltage, approaching the reverse breakdown voltage, such that charge carriers generated by the photovoltaic effect are multiplied by an avalanche breakdown; thus they can be used to detect relatively small amounts of light. From a functional standpoint, they can be regarded as the semiconductor analog of photomultiplier tubes; unlike solar cells, they are not optimised for ''generating'' electricity from light but rather for ''detection'' of incoming photons. Typical applications for APDs are laser rangefinders, long-range Optical fiber, fiber-optic telecommunication, positron emission tomography, and particle physics. History The avalanche photodiode was invented by Japanese engineer Jun-ichi Nishizawa in 1952. However, stu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Photodiode
A photodiode is a semiconductor diode sensitive to photon radiation, such as visible light, infrared or ultraviolet radiation, X-rays and gamma rays. It produces an electrical current when it absorbs photons. This can be used for detection and measurement applications, or for the generation of electrical power in solar cells. Photodiodes are used in a wide range of applications throughout the electromagnetic spectrum from visible light photocells to gamma ray spectrometers. Principle of operation A photodiode is a PIN diode, PIN structure or p–n junction. When a photon of sufficient energy strikes the diode, it creates an electron–electron hole, hole pair. This mechanism is also known as the inner photoelectric effect. If the absorption occurs in the junction's depletion region, or one diffusion length away from it, these carriers are swept from the junction by the built-in electric field of the depletion region. Thus holes move toward the anode, and electrons toward the cath ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million intrinsic atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-typ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
HgCdTe
Hg1−''x''Cd''x''Te or mercury cadmium telluride (also cadmium mercury telluride, MCT, MerCad Telluride, MerCadTel, MerCaT or CMT) is a chemical compound of cadmium telluride (CdTe) and mercury telluride (HgTe) with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions. The amount of cadmium (Cd) in the alloy can be chosen so as to tune the optical absorption of the material to the desired infrared wavelength. CdTe is a semiconductor with a bandgap of approximately at room temperature. HgTe is a semimetal, which means that its bandgap energy is zero. Mixing these two substances allows one to obtain any bandgap between 0 and 1.5 eV. Properties Physical Hg1−''x''Cd''x''Te has a zincblende structure with two interpenetrating face-centered cubic lattices offset by (1/4,1/4,1/4)''a''o in the primitive cell. The cations Cd and Hg are statistically mixed on the yellow sublattice while the Te anions form the grey sublattice in the ima ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ultraviolet
Ultraviolet radiation, also known as simply UV, is electromagnetic radiation of wavelengths of 10–400 nanometers, shorter than that of visible light, but longer than X-rays. UV radiation is present in sunlight and constitutes about 10% of the total electromagnetic radiation output from the Sun. It is also produced by electric arcs, Cherenkov radiation, and specialized lights, such as mercury-vapor lamps, tanning lamps, and black lights. The photons of ultraviolet have greater energy than those of visible light, from about 3.1 to 12 electron volts, around the minimum energy required to ionize atoms. Although long-wavelength ultraviolet is not considered an ionizing radiation because its photons lack sufficient energy, it can induce chemical reactions and cause many substances to glow or fluoresce. Many practical applications, including chemical and biological effects, are derived from the way that UV radiation can interact with organic molecules. The ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Nitride
Gallium nitride () is a binary III/ V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronics, high-power and high-frequency devices. For example, GaN is the substrate that makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in high-radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Optical Fiber
An optical fiber, or optical fibre, is a flexible glass or plastic fiber that can transmit light from one end to the other. Such fibers find wide usage in fiber-optic communications, where they permit transmission over longer distances and at higher Bandwidth (computing), bandwidths (data transfer rates) than electrical cables. Fibers are used instead of metal wires because signals travel along them with less Attenuation, loss and are immune to electromagnetic interference. Fibers are also used for illumination (lighting), illumination and imaging, and are often wrapped in bundles so they may be used to carry light into, or images out of confined spaces, as in the case of a fiberscope. Specially designed fibers are also used for a variety of other applications, such as fiber optic sensors and fiber lasers. Glass optical fibers are typically made by Drawing (manufacturing), drawing, while plastic fibers can be made either by drawing or by extrusion. Optical fibers typically incl ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Absorption Coefficient
The linear attenuation coefficient, attenuation coefficient, or narrow-beam attenuation coefficient characterizes how easily a volume of material can be penetrated by a beam of light, sound, particles, or other energy or matter. A coefficient value that is large represents a beam becoming 'attenuated' as it passes through a given medium, while a small value represents that the medium had little effect on loss. The (derived) SI unit of attenuation coefficient is the reciprocal metre (m−1). Extinction coefficient is another term for this quantity, often used in meteorology and climatology. Most commonly, the quantity measures the exponential decay of intensity, that is, the value of downward ''e''-folding distance of the original intensity as the energy of the intensity passes through a unit (''e.g.'' one meter) thickness of material, so that an attenuation coefficient of 1 m−1 means that after passing through 1 metre, the radiation will be reduced by a factor of '' e'', and fo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Arsenide
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are Group 13 element, group III elements of the periodic table while arsenic is a Group 15 element, group V element. Alloys made of these chemical groups are referred to as III-V compound semiconductor, "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics. The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications. Nomenclature Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards the preferred nomenclature for the alloy is GaxIn1-xAs where the group-III elements appear in order of increasing atomic number ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende (crystal structure), zincblende") crystal structure, identical to that of gallium arsenide, GaAs and most of the List of semiconductor materials, III-V semiconductors. Manufacturing Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine. Applications The application fields of InP splits up into three main areas. It is used as the basis for optoelectronic components, high-speed electronics, and photovoltaics High-speed optoelectronics InP is used as a substrate for epitaxy, epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heterostructure
A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especially on small length scales, where electronic properties depend on spatial properties. A more modern definition of heterojunction is the interface between any two solid-state materials, including crystalline and amorphous structures of metallic, insulating, fast ion conductor and semiconducting materials. Manufacture and applications Heterojunction manufacturing generally requires the use o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
InGaAs
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics. The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications. Nomenclature Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards the preferred nomenclature for the alloy is GaxIn1-xAs where the group-III elements appear in order of increasing atomic number, as in the related alloy system AlxGa1-xAs. By far, the most ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Infrared
Infrared (IR; sometimes called infrared light) is electromagnetic radiation (EMR) with wavelengths longer than that of visible light but shorter than microwaves. The infrared spectral band begins with the waves that are just longer than those of red light (the longest waves in the visible spectrum), so IR is invisible to the human eye. IR is generally (according to ISO, CIE) understood to include wavelengths from around to . IR is commonly divided between longer-wavelength thermal IR, emitted from terrestrial sources, and shorter-wavelength IR or near-IR, part of the solar spectrum. Longer IR wavelengths (30–100 μm) are sometimes included as part of the terahertz radiation band. Almost all black-body radiation from objects near room temperature is in the IR band. As a form of EMR, IR carries energy and momentum, exerts radiation pressure, and has properties corresponding to both those of a wave and of a particle, the photon. It was long known that fires e ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
