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3D XPoint
3D XPoint (pronounced ''three-D cross point'') was a discontinued non-volatile memory (NVM) technology developed jointly by Intel and Micron Technology. It was announced in July 2015 and was available on the open market under the brand name Optane (Intel) from April 2017 to July 2022. Bit storage is based on a change of bulk resistance, in conjunction with a stackable cross-grid data access array, using a technology known as Ovonic Threshold Switch (OTS). Initial prices were less than dynamic random-access memory (DRAM) but more than flash memory. As a non-volatile memory, 3D XPoint had a number of features that distinguish it from other currently available RAM and NVRAM. Although the first generations of 3D XPoint were not especially large or fast, 3D XPoint was used to create some of the fastest SSDs available as of 2019, with small-write latency. As the memory was inherently fast, and byte-addressable, techniques such as read-modify-write and caching used to enhance tra ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Numonyx
Numonyx was a semiconductor company making flash memories, which was founded on March 31, 2008, by Intel Corporation, STMicroelectronics and Francisco Partners. It was acquired by Micron Technology on February 9, 2010, for US$1.27 billion. Numonyx was created from the key assets of businesses that in 2006, generated approximately $3.6 billion in combined annual revenue. The company supplies non-volatile memory for a variety of consumer and industrial devices including cellular phones, MP3 players, digital cameras, computers and other high-tech equipment. Officers Numonyx was managed by Brian Harrison, CEO of Numonyx and former vice president and general manager of Intel's Flash Memory Group, Mario Licciardello, COO of Numonyx and former corporate vice president and general manager of STMicroelectronics’ Flash Memories Group. Edward Doller, former CTO of Intel's memory group, was their Chief Technology Officer. Locations Numonyx was headquartered in Rolle, Switzerland, and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IOPS
Input/output operations per second (IOPS, pronounced ''eye-ops'') is an input/output performance measurement used to characterize computer storage devices like hard disk drives (HDD), solid state drives (SSD), and storage area networks (SAN). Like benchmarks, IOPS numbers published by storage device manufacturers do not directly relate to real-world application performance. Background To meaningfully describe the performance characteristics of any storage device, it is necessary to specify a minimum of three metrics simultaneously: IOPS, response time, and (application) workload. Absent simultaneous specifications of response-time and workload, IOPS are essentially meaningless. In isolation, IOPS can be considered analogous to "revolutions per minute" of an automobile engine i.e. an engine capable of spinning at 10,000 RPMs with its transmission in neutral does not convey anything of value, however an engine capable of developing specified torque and horsepower at a given number ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IM Flash Technologies
IM Flash Technologies, LLC was the semiconductor company founded in January 2006, by Intel Corporation and Micron Technology, Inc. IM Flash produced 3D XPoint used in data centers and high end computers. It had a 300mm wafer fab in Lehi, Utah, United States. It built a second 300mm wafer fab, IM Flash Singapore, which opened in April 2011. IM Flash took the leading edge in NAND flash scaling by moving to 34 nm design rules in 2008. IM Flash has been able to devise 25-nm NAND chips with 193-nm immersion lithography, plus self-aligned double-patterning (SADP) techniques, where it is widely believed that it is using scanners from ASML Holdings NV and SADP technology. In 2011 IM Flash moved to a 20 nm process– which was the smallest NAND flash technology at the time. On July 16, 2018, Micron and Intel announced that they would cease joint development of 3D XPoint after the 2nd generation technology is finalized, which is expected to be completed in the first half of 2019 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Lehi, Utah
Lehi ( ) is a city in Utah County, Utah, United States. The population was 75,907 at the 2020 United States Census, 2020 census, up from 47,407 in 2010, and it is the center of population of Utah. The rapid growth in Lehi is due, in part, to the rapid development of the tech industry region known as Silicon Slopes. History A group of Mormon pioneers settled the area now known as Lehi in the fall of 1850 at a place called Dry Creek in the northernmost part of Utah Valley. It was renamed Evansville in 1851 after David Evans, a local bishop in the Church of Jesus Christ of Latter-day Saints. Other historical names include Sulphur Springs and Snow's Springs. The settlement grew so rapidly that, in early 1852, Bishop Evans petitioned the Utah Territorial Legislature to incorporate the settlement. Lehi City was incorporated by legislative act on February 5, 1852. It was the sixth city incorporated in Utah. The legislature also approved a request to call the new city Lehi, after a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wafer Fabrication
Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency ( RF) amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer fabrication is used to build components with the necessary electrical structures. The main process begins with electrical engineers designing the circuit and defining its functions, and specifying the signals, inputs/outputs and voltages needed. These electrical circuit specifications are entered into electrical circuit design software, such as ''SPICE'', and then imported into circuit layout programs, which are similar to ones used for computer aided design. This is necessary for the layers to be defined for photomask production. The resolution of the circuits increases rapidly with each step in design, as the scale of the circuits at th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetoresistive RAM
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as Flash memory, flash RAM and Dynamic random-access memory, DRAM have practical advantages that have so far kept MRAM in a niche role in the market. Description Unlike conventional random-access memory, RAM chip technologies, data in MRAM is not stored as electric charge or current flows, but by magnetism, magnetic storage elements. The elements are formed from two Ferromagnetism, ferromagnetic plates, each of which can hold a magnetization, separated by a thin insulating layer. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Memristor
A memristor (; a portmanteau of ''memory resistor'') is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage. It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor. Chua and Kang later generalized the concept to memristive systems. Such a system comprises a circuit, of multiple conventional components, which mimics key properties of the ideal memristor component and is also commonly referred to as a memristor. Several such memristor system technologies have been developed, notably ReRAM. The identification of memristive properties in electronic devices has attracted controversy. Experimentally, the ideal memristor has yet to be demonstrated. As a fundamental electrical component Chua in his 1971 paper identified a theoretical symmetry between the non-linear resistor (voltage vs. current), non-linear cap ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Brian Krzanich
Brian Matthew Krzanich (born May 9, 1960) is an American engineer who was CEO of Intel from May 2013 to June 2018. Krzanich joined Intel as an engineer in 1982 and served as chief operating officer (COO) before being promoted to CEO in May 2013. During Krzanich's term as CEO, Intel went through major restructurings and pulled out of the mobile chip market. Because of Krzanich's decisions, Intel also struggled to produce 10-nanometer chips, compared to chip manufacturers TSMC and Samsung, resulting in numerous delays and a loss of market share in the computer chip business to rivals like AMD. Krzanich has served on the Deere & Co. and Semiconductor Industry Association boards, as well as the Drone Advisory Committee, which advises the Federal Aviation Administration. He resigned from Intel on June 21, 2018 after a past consensual relationship with a subordinate against company policy was disclosed. Krzanich was appointed as CEO of automotive startup, Cerence, in October 2024. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Crossbar (computer Hardware Manufacturer)
Crossbar is a company based in Santa Clara, California. Crossbar develops a class of non-volatile resistive random-access memory (RRAM) technology. History Crossbar was founded in 2010, by George Minassian, Hagop Nazarian, and Wei Lu. As part of the University of Michigan Tech Transfer program, in 2010, Crossbar licensed resistive RAM (RRAM) patents from the University of Michigan. Crossbar filed patents relating to the development, commercialization and manufacturing of RRAM technology. In August 2013, Crossbar emerged from stealth mode and announced the development of a memory array at a commercial semiconductor device fabrication facility. It was said to deliver faster write performance; lower power consumption and more endurance at half the die size, compared to NAND flash memory. Since it is CMOS-compatible, it can be fabricated without special equipment or materials. Crossbar received $25 million in funding from Artiman Ventures, Kleiner Perkins Caufield and Byers ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Resistive Random-access Memory
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm. ReRAM bears some similarities to conductive-bridging RAM (CBRAM) and phase-change memory (PCM) in that they change dielectric material properties. CBRAM involves one electrode providing ions that dissolve readily in an electrolyte material, while PCM involves generating sufficient Joule heating to effect amorphous-to-crystalline or crystalline-to-amorphous phase changes. By contrast, ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field. The motion of oxygen ions and vacancies in the oxide would be analogous ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
ReRAM
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access memory, random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm. ReRAM bears some similarities to Programmable metallization cell, conductive-bridging RAM (CBRAM) and phase-change memory (PCM) in that they change dielectric material properties. CBRAM involves one electrode providing ions that dissolve readily in an electrolyte material, while PCM involves generating sufficient Joule heating to effect amorphous-to-crystalline or crystalline-to-amorphous phase changes. By contrast, ReRAM involves generating defects in a thin oxide layer, known as oxygen vacancies (oxide bond locations where the oxygen has been removed), which can subsequently charge and drift under an electric field. The motion of oxyg ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
