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1 Nm Process
In semiconductor manufacturing, the "1 nm process" represents the next significant milestone in MOSFET (metal–oxide–semiconductor field-effect transistor) scaling, succeeding the "2 nm" process node. It continues the industry trend of miniaturization in integrated circuit (IC) technology, which has been essential for improving performance, increasing transistor density, and reducing power consumption. The term "1 nanometer" has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors. According to the projections contained in the 2021 update of the International Roadmap for Devices and Systems published by the Institute of Electrical and Electronics Engineers (IEEE), a "1 nm node range label" is expected to have a contacted gate pitch of 42 nanometers and a tightest metal pitch of 16 nanometers. The first 1 nm chips are expected to be launched in 2027. History In 2008, transistors one atom thick and ten atoms wide were ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
2 Nm Process
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors. According to the projections contained in the 2021 update of the International Roadmap for Devices and Systems published by the Institute of Electrical and Electronics Engineers (IEEE), a "2.1 nm node range label" is expected to have a contacted gate pitch of 45 nanometers and a tightest metal pitch of 20 nanometers. As such, 2 nm is used primarily as a marketing term by the semiconductor industry to refer to a new, improved generation of chips in terms of increased transistor density (a higher degree of miniaturization), increased speed, and reduced power consumption compared to the previous 3 nm ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Australian Broadcasting Corporation
The Australian Broadcasting Corporation (ABC) is Australia’s principal public service broadcaster. It is funded primarily by grants from the federal government and is administered by a government-appointed board of directors. The ABC is a publicly-owned statutory organisation that is politically independent and accountable; for example, through its production of annual reports, and is bound by provisions contained within the Public Interest Disclosure Act 2013 and the Public Governance, Performance and Accountability Act 2013, with its charter enshrined in legislation, the ''Australian Broadcasting Corporation Act 1983''. ABC Commercial, a profit-making division of the corporation, also helps generate funding for content provision. The ABC was established as the Australian Broadcasting Commission on 1 July 1932 by an Act of Federal Parliament. It effectively replaced the Australian Broadcasting Company, a private company established in 1924 to provide programming for A ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
GAAFET
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cells, colloquially referred to as extending Moore's law (in its narrow, specific version concerning density scaling ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
FinFET
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices exhibit significantly faster switching times and higher current density than planar CMOS (complementary metal–oxide–semiconductor) technology, resulting in enhanced performance and power efficienc FinFET is a type of non-planar transistor, or "3D" transistor. It is the basis for modern nanoelectronic semiconductor device fabrication. Microchips utilizing FinFET gates first became commercialized in the first half of the 2010s, and became the dominant gate design at 14 nm, 10 nm and 7 nm process nodes. It is common for a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Two-dimensional Semiconductor
A two-dimensional semiconductor (also known as 2D semiconductor) is a type of natural semiconductor with thicknesses on the atomic scale. Geim and Novoselov et al. initiated the field in 2004 when they reported a new semiconducting material graphene, a flat monolayer of carbon atoms arranged in a 2D honeycomb lattice. A 2D monolayer semiconductor is significant because it exhibits stronger piezoelectric coupling than traditionally employed bulk forms. This coupling could enable applications. One research focus is on designing nanoelectronic components by the use of graphene as electrical conductor, hexagonal boron nitride as electrical insulator, and a transition metal dichalcogenide as semiconductor. Materials Graphene Graphene, consisting of single sheets of carbon atoms, has high electron mobility and high thermal conductivity. One issue regarding graphene is its lack of a band gap, which poses a problem in particular with digital electronics because it is unable to switch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
RISC-V
RISC-V (pronounced "risk-five") is an open standard instruction set architecture (ISA) based on established reduced instruction set computer (RISC) principles. The project commenced in 2010 at the University of California, Berkeley. It transferred to the RISC-V Foundation in 2015, and from there to RISC-V International, a Swiss non-profit entity, in November 2019. Similar to several other RISC ISAs, e.g. Amber (processor), Amber (ARMv2)(2001), SuperH#J_Core, J-Core(2015), OpenRISC(2000), or OpenSPARC(2005), RISC-V is offered under royalty-free open-source licenses. The documents defining the RISC-V instruction set architecture (ISA) are offered under a Creative Commons license or a BSD licenses, BSD License. Mainline support for RISC-V was added to the Linux 5.17 kernel in 2022, along with its toolchain. In July 2023, RISC-V, in its 64-bit computing, 64-bit variant called riscv64, was included as an official architecture of Linux distribution Debian, in its Debian version histor ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fudan University
Fudan University (FDU) is a public university, national public university in Yangpu, Shanghai, Yangpu, Shanghai, China. It is affiliated with the Ministry of Education (China), Ministry of Education and is co-funded with the Shanghai Municipal People's Government, Shanghai Municipal Government. The university is part of Project 211, Project 985, and the Double First-Class Construction. The university was originally founded by the Chinese Jesuits, Jesuit priest Ma Xiangbo in 1905. It is a member of the C9 League. History 1905–1917: college-preparatory school The university traces its origins to Fudan College, established in 1905 by Chinese Jesuit priest Ma Xiangbo. Prior to founding Fudan, Ma had established Aurora University (Shanghai), Aurora College, where the Society of Jesus frequently opposed and intervened in student movements. This led Ma to create a new institution, Fudan College, as a preparatory school for higher education with government funding, offering th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Karlsruhe Institute Of Technology
The Karlsruhe Institute of Technology (KIT; ) is both a German public research university in Karlsruhe, Baden-Württemberg, and a research center of the Helmholtz Association. KIT was created in 2009 when the University of Karlsruhe (), founded in 1825 as a public research university and also known as the "Fridericiana", merged with the Karlsruhe Research Center (), which had originally been established in 1956 as a national nuclear research center (, or KfK). KIT is thus the first and only institution in Germany to overcome the division of the German scientific and research landscape into academic and non-academic institutions in the form of a merger of two different types of institutions. KIT is a member of the TU9, an incorporated society of the largest and most notable German institutes of technology. As part of the German Universities Excellence Initiative KIT was one of three universities which were awarded excellence status in 2006. In the following "German Excellence ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Covalent Radius
The covalent radius, ''r''cov, is a measure of the size of an atom that forms part of one covalent bond. It is usually measured either in picometres (pm) or angstroms (Å), with 1 Å = 100 pm. In principle, the sum of the two covalent radii should equal the covalent bond length between two atoms, ''R''(AB) = ''r''(A) + ''r''(B). Moreover, different radii can be introduced for single, double and triple bonds (r1, r2 and r3 below), in a purely operational sense. These relationships are certainly not exact because the size of an atom is not constant but depends on its chemical environment. For heteroatomic A–B bonds, ionic terms may enter. Often the polar covalent bonds are shorter than would be expected based on the sum of covalent radii. Tabulated values of covalent radii are either average or idealized values, which nevertheless show a certain transferability (chemistry), transferability between different situations, which makes them useful. The bond lengths ''R' ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Graphene
Graphene () is a carbon allotrope consisting of a Single-layer materials, single layer of atoms arranged in a hexagonal lattice, honeycomb planar nanostructure. The name "graphene" is derived from "graphite" and the suffix -ene, indicating the presence of double bonds within the carbon structure. Graphene is known for its exceptionally high Ultimate tensile strength, tensile strength, Electrical resistivity and conductivity, electrical conductivity, Transparency and translucency, transparency, and being the thinnest two-dimensional material in the world. Despite the nearly transparent nature of a single graphene sheet, graphite (formed from stacked layers of graphene) appears black because it absorbs all visible light wavelengths. On a microscopic scale, graphene is the strongest material ever measured. The existence of graphene was first theorized in 1947 by P. R. Wallace, Philip R. Wallace during his research on graphite's electronic properties, while the term ''graphen ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Van Der Waals Radius
The van der Waals radius, ''r'', of an atom is the radius of an imaginary hard sphere representing the distance of closest approach for another atom. It is named after Johannes Diderik van der Waals, winner of the 1910 Nobel Prize in Physics, as he was the first to recognise that atoms were not simply points and to demonstrate the physical consequences of their size through the van der Waals equation of state. van der Waals volume The van der Waals volume, ''V'', also called the atomic volume or molecular volume, is the atomic property most directly related to the van der Waals radius. It is the volume "occupied" by an individual atom (or molecule). The van der Waals volume may be calculated if the van der Waals radii (and, for molecules, the inter-atomic distances, and angles) are known. For a single atom, it is the volume of a sphere whose radius is the van der Waals radius of the atom:V_ = \pi r_^3. For a molecule, it is the volume enclosed by the van der Waals surf ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
