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Aluminium gallium arsenide (also gallium aluminium arsenide) ( Al_x Ga_1−x As) is a

semiconductor material A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. ...

with very nearly the same

lattice constant A lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the unit cells in a crystal lattice, and is proportional to the distance between atoms in the crystal. A simple cubic crystal has o ...

GaAs Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrat ...

, but a larger

bandgap In solid-state physics, a band gap, also called an energy gap, is an energy range in a solid where no electronic states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference (i ...

. The ''x'' in the formula above is a number between 0 and 1 - this indicates an arbitrary

alloy An alloy is a mixture of chemical elements of which at least one is a metal. Unlike chemical compounds with metallic bases, an alloy will retain all the properties of a metal in the resulting material, such as electrical conductivity, ductili ...

between

and AlAs. The chemical formula ''AlGaAs'' should be considered an abbreviated form of the above, rather than any particular ratio. The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct. The

refractive index In optics, the refractive index (or refraction index) of an optical medium is a dimensionless number that gives the indication of the light bending ability of that medium. The refractive index determines how much the path of light is bent, ...

is related with the bandgap via the Kramers–Kronig relations and varies between 2.9 (x = 1) and 3.5 (x = 0). This allows the construction of Bragg mirrors used in VCSELs, RCLEDs, and substrate-transferred crystalline coatings. Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector ( QWIP). It is commonly used in

-based red- and near-

infra-red Infrared (IR), sometimes called infrared light, is electromagnetic radiation (EMR) with wavelengths longer than those of visible light. It is therefore invisible to the human eye. IR is generally understood to encompass wavelengths from around ...

-emitting (700–1100 nm) double-hetero-structure

laser diode The laser diode chip removed and placed on the eye of a needle for scale A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with ...

Safety and toxicity aspects

The toxicology of AlGaAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The

environment, health and safety Environment (E), health (H) and safety (S), EHS is an acronym for the set that studies and implements the practical aspects of protecting the environment and maintaining health and safety at occupation. In simple terms it is what organizations must ...

aspects of aluminium gallium arsenide sources (such as trimethylgallium and

arsine Arsine (IUPAC name: arsane) is an inorganic compound with the formula As H3. This flammable, pyrophoric, and highly toxic pnictogen hydride gas is one of the simplest compounds of arsenic. Despite its lethality, it finds some applications ...

) and industrial hygiene monitoring studies of standard

MOVPE Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. ...

sources have been reported recently in a review.

References

External links

* {{DEFAULTSORT:Aluminium Gallium Arsenide Arsenides Aluminium compounds Gallium compounds III-V semiconductors III-V compounds Light-emitting diode materials Zincblende crystal structure