AlGaAs
   HOME

TheInfoList



OR:

Aluminium gallium arsenide (also gallium aluminium arsenide) ( Alx Ga1−x As) is a
semiconductor material A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. ...
with very nearly the same
lattice constant A lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the unit cells in a crystal lattice, and is proportional to the distance between atoms in the crystal. A simple cubic crystal has o ...
as
GaAs Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circ ...
, but a larger
bandgap In solid-state physics, a band gap, also called an energy gap, is an energy range in a solid where no electronic states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference (i ...
. The ''x'' in the formula above is a number between 0 and 1 - this indicates an arbitrary
alloy An alloy is a mixture of chemical elements of which at least one is a metal. Unlike chemical compounds with metallic bases, an alloy will retain all the properties of a metal in the resulting material, such as electrical conductivity, ductilit ...
between
GaAs Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circ ...
and AlAs. The chemical formula ''AlGaAs'' should be considered an abbreviated form of the above, rather than any particular ratio. The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct. The
refractive index In optics, the refractive index (or refraction index) of an optical medium is a dimensionless number that gives the indication of the light bending ability of that medium. The refractive index determines how much the path of light is bent, or ...
is related with the bandgap via the
Kramers–Kronig relations The Kramers–Kronig relations are bidirectional mathematical relations, connecting the real and imaginary parts of any complex function that is analytic in the upper half-plane. The relations are often used to compute the real part from the imag ...
and varies between 2.9 (x = 1) and 3.5 (x = 0). This allows the construction of Bragg mirrors used in
VCSEL The vertical-cavity surface-emitting laser, or VCSEL , is a type of semiconductor laser diode with laser beam emission perpendicular from the top surface, contrary to conventional edge-emitting semiconductor lasers (also ''in-plane'' lasers) which ...
s, RCLEDs, and substrate-transferred crystalline coatings. Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector (
QWIP A Quantum Well Infrared Photodetector (QWIP) is an infrared photodetector, which uses electronic intersubband transitions in quantum wells to absorb photons. In order to be used for infrared detection, the parameters of the quantum wells in the qua ...
). It is commonly used in
GaAs Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circ ...
-based
red Red is the color at the long wavelength end of the visible spectrum of light, next to orange and opposite violet. It has a dominant wavelength of approximately 625–740 nanometres. It is a primary color in the RGB color model and a secondar ...
- and near- infra-red-emitting (700–1100 nm) double-hetero-structure
laser diode The laser diode chip removed and placed on the eye of a needle for scale A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with e ...
s.


Safety and toxicity aspects

The toxicology of AlGaAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The
environment, health and safety Environment (E), health (H) and safety (S), EHS is an acronym for the set that studies and implements the practical aspects of protecting the environment and maintaining health and safety at occupation. In simple terms it is what organizations must ...
aspects of aluminium gallium arsenide sources (such as
trimethylgallium Trimethylgallium, often abbreviated to TMG or TMGa, is the organogallium compound with the formula Ga(CH3)3. It is a colorless, pyrophoric liquid. Unlike trimethylaluminium, TMG adopts a monomeric structure. When examined in detail, the monomeric ...
and
arsine Arsine (IUPAC name: arsane) is an inorganic compound with the formula As H3. This flammable, pyrophoric, and highly toxic pnictogen hydride gas is one of the simplest compounds of arsenic. Despite its lethality, it finds some applications in ...
) and industrial hygiene monitoring studies of standard
MOVPE Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. ...
sources have been reported recently in a review.


References


External links

* {{DEFAULTSORT:Aluminium Gallium Arsenide Arsenides Aluminium compounds Gallium compounds III-V semiconductors III-V compounds Light-emitting diode materials Zincblende crystal structure