Tohru Mogami from Selete, Inc. in Tsukuba, Japan was named a
Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2012
for his work in surface-channel
pMOSFET and
nanoscale transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).
A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch e ...
technology.
References
Fellow Members of the IEEE
Living people
Japanese electrical engineers
Year of birth missing (living people)
Place of birth missing (living people)
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