Gurzhi Effect
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The Gurzhi effect was theoretically predicted by Radii Gurzhi in 1963, and it consists of decreasing of electric
resistance Resistance may refer to: Arts, entertainment, and media Comics * Either of two similarly named but otherwise unrelated comic book series, both published by Wildstorm: ** ''Resistance'' (comics), based on the video game of the same title ** ''T ...
R of a finite size conductor with increasing of its temperature T (i.e. the situation dR/dT < 0 for some temperature interval). Gurzhi effect usually being considered as the evidence of electron
hydrodynamic In physics and engineering, fluid dynamics is a subdiscipline of fluid mechanics that describes the flow of fluids—liquids and gases. It has several subdisciplines, including ''aerodynamics'' (the study of air and other gases in motion) and ...
transport in conducting media. The mechanism of Gurzhi effect is the following. The value of the resistance of the conductor is inverse to the l_=\min\ — a mean free path corresponding to the momentum loss from the
electron The electron ( or ) is a subatomic particle with a negative one elementary electric charge. Electrons belong to the first generation of the lepton particle family, and are generally thought to be elementary particles because they have no kn ...
s+
phonon In physics, a phonon is a collective excitation in a periodic, Elasticity (physics), elastic arrangement of atoms or molecules in condensed matter physics, condensed matter, specifically in solids and some liquids. A type of quasiparticle, a phon ...
s systemR\propto \frac,where l_ is the average distance which electron pass between two consequence interactions with a boundary, and l_ is a mean free path corresponding to other possibilities of momentum loss. The electron reflection from the boundary is assumed to be diffusive. When temperature is low we have ballistic transport with l_ \gg d, l_ \approx l_ \approx d, where d is a width of the conductor, l_is a mean free path corresponding to effective normal electron-electron collisions (i.e. collisions without total electrons+phonons momentum loss). For low temperatures phonon emitted by electron quickly interacts with another electron without loss of total electron+phonons momentum and l_\approx l_, where l_\propto T^is a mean free path corresponding to the electron-phonon collisions. Also we assume d \ll l_V. Thus the resistance for lowest temperatures is a constant R \propto d^(see the picture). The Gurzhi effect appears when the temperature is increased to have l_ \ll d . In this regime the electron diffusive length between two consequence interaction with the boundary can be considered as momentum loss free path: l_\approx l_ \approx d^2/l_, and the resistance is proportional to R \propto l_(T)/d^2 \propto T^d^, and thus we have a negative derivative dR/dT < 0 . Therefore, Gurzhi effect can be observed when l_\ll d \ll d^2/l_ \ll l_V . Gurzhi effect corresponds to unusual situation when electrical resistance depends on a frequency of normal collisions. As one can see this effect appears due to the presence of a boundaries with finite characteristic size d. Later Gurzhi's group discovered a special role of electron hydrodynamics in a spin transport. In such a case magnetic inhomogeneity plays role of a "boundary" with spin-diffusion length as a characteristic size instead of d as before. This magnetic inhomogeneity stops electrons of the one spin component which becomes an effective scatterers for electrons of another spin component. In this case
magnetoresistance Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic field. There are a variety of effects that can be called magnetoresistance. Some occur in bulk ...
of a conductor depends on the frequency of normal electron-electron collisions as well as in the Gurzhi effect.


References

{{Reflist Electric current