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The field-effect transistor (FET) is a type of
transistor upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch ...
that uses an
electric field An electric field (sometimes E-field) is the physical field that surrounds electrically charged particles and exerts force on all other charged particles in the field, either attracting or repelling them. It also refers to the physical field ...
to control the flow of
current Currents, Current or The Current may refer to: Science and technology * Current (fluid), the flow of a liquid or a gas ** Air current, a flow of air ** Ocean current, a current in the ocean *** Rip current, a kind of water current ** Current (stre ...
in a
semiconductor A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. ...
. FETs (
JFET The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. ...
s or
MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which d ...
s) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the
conductivity Conductivity may refer to: *Electrical conductivity, a measure of a material's ability to conduct an electric current **Conductivity (electrolytic), the electrical conductivity of an electrolyte in solution **Ionic conductivity (solid state), elec ...
between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either
electron The electron ( or ) is a subatomic particle with a negative one elementary electric charge. Electrons belong to the first generation of the lepton particle family, and are generally thought to be elementary particles because they have no ...
s (n-channel) or
hole A hole is an opening in or through a particular medium, usually a solid body. Holes occur through natural and artificial processes, and may be useful for various purposes, or may represent a problem needing to be addressed in many fields of en ...
s (p-channel) as
charge carrier In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term i ...
s in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the
MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which d ...
(metal-oxide-semiconductor field-effect transistor).


History

The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist
Julius Edgar Lilienfeld Julius Edgar Lilienfeld (April 18, 1882 – August 28, 1963) was an Austro-Hungarian, and later American (where he moved in 1921) physicist and electrical engineer, who was credited with the first patent on the field-effect (FET) (1925). Be ...
in 1925 and by
Oskar Heil Oskar Heil (20 March 1908, in Langwieden – 15 May 1994, San Mateo, California) was a German electrical engineer and inventor. He studied physics, chemistry, mathematics, and music at the Georg-August University of Göttingen and was awarded his ...
in 1934, but they were unable to build a working practical semiconducting device based on the concept. The
transistor upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch ...
effect was later observed and explained by
John Bardeen John Bardeen (; May 23, 1908 – January 30, 1991) was an American physicist and engineer. He is the only person to be awarded the Nobel Prize in Physics twice: first in 1956 with William Shockley and Walter Brattain for the invention of the ...
and
Walter Houser Brattain Walter Houser Brattain (; February 10, 1902 – October 13, 1987) was an American physicist at Bell Labs who, along with fellow scientists John Bardeen and William Shockley, invented the point-contact transistor in December 1947. They shared th ...
while working under
William Shockley William Bradford Shockley Jr. (February 13, 1910 – August 12, 1989) was an American physicist and inventor. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain. The three scientists were jointl ...
at
Bell Labs Nokia Bell Labs, originally named Bell Telephone Laboratories (1925–1984), then AT&T Bell Laboratories (1984–1996) and Bell Labs Innovations (1996–2007), is an American industrial research and scientific development company owned by mult ...
in 1947, shortly after the 17-year patent expired. Shockley initially attempted to build a working FET, by trying to modulate the conductivity of a
semiconductor A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. ...
, but was unsuccessful, mainly due to problems with the
surface states Surface states are electronic states found at the Surface (topology), surface of materials. They are formed due to the sharp transition from solid material that ends with a surface and are found only at the atom layers closest to the surface. The t ...
, the
dangling bond In chemistry, a dangling bond is an unsatisfied valence on an immobilized atom. An atom with a dangling bond is also referred to as an immobilized free radical or an immobilized radical, a reference to its structural and chemical similarity to a f ...
, and the
germanium Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors si ...
and
copper Copper is a chemical element with the symbol Cu (from la, cuprum) and atomic number 29. It is a soft, malleable, and ductile metal with very high thermal and electrical conductivity. A freshly exposed surface of pure copper has a pinkish- ...
compound materials. In the course of trying to understand the mysterious reasons behind their failure to build a working FET, it led to Bardeen and Brattain instead inventing the
point-contact transistor The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947. They worked in a group led by physicis ...
in 1947, which was followed by Shockley's
bipolar junction transistor A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar ...
in 1948. The first FET device to be successfully built was the
junction field-effect transistor The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifie ...
(JFET). A JFET was first patented by
Heinrich Welker Heinrich Johann Welker (9 September 1912 in Ingolstadt – 25 December 1981 in Erlangen) was a German theoretical and applied physicist who invented the " transistron", a transistor made at Westinghouse independently of the first successful transis ...
in 1945. The
static induction transistor The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and low noise. It is a vertical structure device with short multichannel. The device was original ...
(SIT), a type of JFET with a short channel, was invented by Japanese engineers
Jun-ichi Nishizawa was a Japanese engineer and inventor. He is known for his electronic inventions since the 1950s, including the PIN diode, static induction transistor, static induction thyristor, SIT/SITh. His inventions contributed to the development of i ...
and Y. Watanabe in 1950. Following Shockley's theoretical treatment on the JFET in 1952, a working practical JFET was built by George C. Dacey and Ian M. Ross in 1953. However, the JFET still had issues affecting
junction transistor A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar t ...
s in general. Junction transistors were relatively bulky devices that were difficult to manufacture on a
mass-production Mass production, also known as flow production or continuous production, is the production of substantial amounts of standardized products in a constant flow, including and especially on assembly lines. Together with job production and batch ...
basis, which limited them to a number of specialised applications. The insulated-gate field-effect transistor (IGFET) was theorized as a potential alternative to junction transistors, but researchers were unable to build working IGFETs, largely due to the troublesome surface state barrier that prevented the external
electric field An electric field (sometimes E-field) is the physical field that surrounds electrically charged particles and exerts force on all other charged particles in the field, either attracting or repelling them. It also refers to the physical field ...
from penetrating into the material. By the mid-1950s, researchers had largely given up on the FET concept, and instead focused on
bipolar junction transistor A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar ...
(BJT) technology. The foundations of MOSFET technology were laid down by the work of
William Shockley William Bradford Shockley Jr. (February 13, 1910 – August 12, 1989) was an American physicist and inventor. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain. The three scientists were jointl ...
,
John Bardeen John Bardeen (; May 23, 1908 – January 30, 1991) was an American physicist and engineer. He is the only person to be awarded the Nobel Prize in Physics twice: first in 1956 with William Shockley and Walter Brattain for the invention of the ...
and
Walter Brattain Walter Houser Brattain (; February 10, 1902 – October 13, 1987) was an American physicist at Bell Labs who, along with fellow scientists John Bardeen and William Shockley, invented the point-contact transistor in December 1947. They shared t ...
. Shockley independently envisioned the FET concept in 1945, but he was unable to build a working device. The next year Bardeen explained his failure in terms of
surface states Surface states are electronic states found at the Surface (topology), surface of materials. They are formed due to the sharp transition from solid material that ends with a surface and are found only at the atom layers closest to the surface. The t ...
. Bardeen applied the theory of surface states on semiconductors (previous work on surface states was done by Shockley in 1939 and
Igor Tamm Igor Yevgenyevich Tamm ( rus, И́горь Евге́ньевич Тамм , p=ˈiɡərʲ jɪvˈɡʲenʲjɪvitɕ ˈtam , a=Ru-Igor Yevgenyevich Tamm.ogg; 8 July 1895 – 12 April 1971) was a Soviet physicist who received the 1958 Nobel Prize in ...
in 1932) and realized that the external field was blocked at the surface because of extra electrons which are drawn to the semiconductor surface. Electrons become trapped in those localized states forming an inversion layer. Bardeen's hypothesis marked the birth of surface physics. Bardeen then decided to make use of an inversion layer instead of the very thin layer of semiconductor which Shockley had envisioned in his FET designs. Based on his theory, in 1948 Bardeen patented the progenitor of MOSFET, an insulated-gate FET (IGFET) with an inversion layer. The inversion layer confines the flow of minority carriers, increasing modulation and conductivity, although its electron transport depends on the gate's insulator or quality of oxide if used as an insulator, deposited above the inversion layer. Bardeen's patent as well as the concept of an inversion layer forms the basis of CMOS technology today. In 1976 Shockley described Bardeen's surface state hypothesis "as one of the most significant research ideas in the semiconductor program". After Bardeen's surface state theory the trio tried to overcome the effect of surface states. In late 1947, Robert Gibney and Brattain suggested the use of electrolyte placed between metal and semiconductor to overcome the effects of surface states. Their FET device worked, but amplification was poor. Bardeen went further and suggested to rather focus on the conductivity of the inversion layer. Further experiments led them to replace electrolyte with a solid oxide layer in the hope of getting better results. Their goal was to penetrate the oxide layer and get to the inversion layer. However, Bardeen suggested they switch from
silicon Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic ta ...
to
germanium Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors si ...
and in the process their oxide got inadvertently washed off. They stumbled upon a completely different transistor, the
point-contact transistor The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947. They worked in a group led by physicis ...
. Lillian Hoddeson argues that "had Brattain and Bardeen been working with silicon instead of germanium they would have stumbled across a successful field effect transistor". By the end of the first half of the 1950s, following theoretical and experimental work of Bardeen, Brattain, Kingston, Morrison and others, it became more clear that there were two types of surface states. Fast surface states were found to be associated with the bulk and a semiconductor/oxide interface. Slow surface states were found to be associated with the oxide layer because of
adsorption Adsorption is the adhesion of atoms, ions or molecules from a gas, liquid or dissolved solid to a surface. This process creates a film of the ''adsorbate'' on the surface of the ''adsorbent''. This process differs from absorption, in which a ...
of atoms, molecules and ions by the oxide from the ambient. The latter were found to be much more numerous and to have much longer
relaxation time In the physical sciences, relaxation usually means the return of a perturbed system into equilibrium. Each relaxation process can be categorized by a relaxation time τ. The simplest theoretical description of relaxation as function of time ' ...
s. At the time
Philo Farnsworth Philo Taylor Farnsworth (August 19, 1906 – March 11, 1971) was an American inventor and television pioneer. He made many crucial contributions to the early development of all-electronic television. He is best known for his 1927 invention of t ...
and others came up with various methods of producing atomically clean semiconductor surfaces. In 1955, Carl Frosch and Lincoln Derrick accidentally covered the surface of silicon
wafer A wafer is a crisp, often sweet, very thin, flat, light and dry biscuit, often used to decorate ice cream, and also used as a garnish on some sweet dishes. Wafers can also be made into cookies with cream flavoring sandwiched between them. They ...
with a layer of silicon dioxide. They showed that oxide layer prevented certain dopants into the silicon wafer, while allowing for others, thus discovering the passivating effect of
oxidation Redox (reduction–oxidation, , ) is a type of chemical reaction in which the oxidation states of substrate change. Oxidation is the loss of electrons or an increase in the oxidation state, while reduction is the gain of electrons or a ...
on the semiconductor surface. Their further work demonstrated how to etch small openings in the oxide layer to diffuse dopants into selected areas of the silicon wafer. In 1957, they published a research paper and patented their technique summarizing their work. The technique they developed is known as oxide diffusion masking, which would later be used in the fabrication of MOSFET devices. At Bell Labs, the importance of Frosch's technique was immediately realized. Results of their work circulated around Bell Labs in the form of BTL memos before being published in 1957. At Shockley Semiconductor, Shockley had circulated the preprint of their article in December 1956 to all his senior staff, including
Jean Hoerni Jean Amédée Hoerni (September 26, 1924 – January 12, 1997) was a Swiss-American engineer. He was a silicon transistor pioneer, and a member of the " traitorous eight". He developed the planar process, an important technology for reliably f ...
. In 1955, Ian Munro Ross filed a patent for a FeFET or MFSFET. Its structure was like that of a modern inversion channel MOSFET, but ferroelectric material was used as a dielectric/insulator instead of oxide. He envisioned it as a form of memory, years before the floating gate MOSFET. In February 1957, John Wallmark filed a patent for FET in which germanium monoxide was used as a gate dielectric, but he didn't pursue the idea. In his other patent filed the same year he described a double gate FET. In March 1957, in his laboratory notebook, Ernesto Labate, a research scientist at
Bell Labs Nokia Bell Labs, originally named Bell Telephone Laboratories (1925–1984), then AT&T Bell Laboratories (1984–1996) and Bell Labs Innovations (1996–2007), is an American industrial research and scientific development company owned by mult ...
, conceived of a device similar to the later proposed MOSFET, although Labate's device didn't explicitly use silicon dioxide as an insulator.


Metal-oxide-semiconductor FET (MOSFET)

A breakthrough in FET research came with the work of Egyptian engineer
Mohamed Atalla Mohamed M. Atalla ( ar, محمد عطاالله; August 4, 1924 – December 30, 2009) was an Egyptian-American engineer, physicist, cryptographer, inventor and entrepreneur. He was a semiconductor pioneer who made important contributions to ...
in the late 1950s. In 1958 he presented experimental work which showed that growing thin silicon oxide on clean silicon surface leads to neutralization of surface states. This is known as
surface passivation A surface, as the term is most generally used, is the outermost or uppermost layer of a physical object or space. It is the portion or region of the object that can first be perceived by an observer using the senses of sight and touch, and is t ...
, a method that became critical to the
semiconductor industry The semiconductor industry is the aggregate of companies engaged in the design and fabrication of semiconductors and semiconductor devices, such as transistors and integrated circuits. It formed around 1960, once the fabrication of semicondu ...
as it made mass-production of silicon
integrated circuit An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of tiny ...
s possible. The
metal–oxide–semiconductor field-effect transistor The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which d ...
(MOSFET) was then invented by Mohamed Atalla and
Dawon Kahng Dawon Kahng ( ko, 강대원; May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET (metal–oxide–semiconductor field-effe ...
in 1959. The MOSFET largely superseded both the bipolar transistor and the JFET, and had a profound effect on
digital electronic Digital electronics is a field of electronics involving the study of digital signals and the engineering of devices that use or produce them. This is in contrast to analog electronics and analog signals. Digital electronic circuits are usually ...
development. With its high scalability, and much lower power consumption and higher density than bipolar junction transistors, the MOSFET made it possible to build high-density integrated circuits. The MOSFET is also capable of handling higher power than the JFET. The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. The MOSFET thus became the most common type of transistor in computers, electronics, and communications technology (such as
smartphones A smartphone is a portable computer device that combines mobile telephone and computing functions into one unit. They are distinguished from feature phones by their stronger hardware capabilities and extensive mobile operating systems, which ...
). The
US Patent and Trademark Office The United States Patent and Trademark Office (USPTO) is an agency in the U.S. Department of Commerce that serves as the national patent office and trademark registration authority for the United States. The USPTO's headquarters are in Alex ...
calls it a "groundbreaking invention that transformed life and culture around the world".
CMOS Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOS ...
(complementary MOS), a semiconductor device fabrication process for MOSFETs, was developed by
Chih-Tang Sah Chih-Tang "Tom" Sah (; born in November 1932 in Beijing, China) is a Chinese-American electronics engineer and condensed matter physicist. He is best known for inventing CMOS (complementary MOS) logic with Frank Wanlass at Fairchild Semiconducto ...
and
Frank Wanlass Frank Marion Wanlass (May 17, 1933 in Thatcher, AZ – September 9, 2010 in Santa Clara, California) was an American electrical engineer. He is best known for inventing CMOS (complementary MOS) logic with Chih-Tang Sah in 1963. CMOS has since ...
at
Fairchild Semiconductor Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of in ...
in 1963. The first report of a
floating-gate MOSFET The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating n ...
was made by Dawon Kahng and
Simon Sze Simon Min Sze, or Shi Min (; born 1936), is a Chinese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967. Biography Sze was born in Nanjing, Jiangsu, and gr ...
in 1967. A
double-gate A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be control ...
MOSFET was first demonstrated in 1984 by Electrotechnical Laboratory researchers Toshihiro Sekigawa and Yutaka Hayashi.
FinFET A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, ...
(fin field-effect transistor), a type of 3D non-planar multi-gate MOSFET, originated from the research of Digh Hisamoto and his team at Hitachi Central Research Laboratory in 1989.


Basic information

FETs can be majority-charge-carrier devices, in which the current is carried predominantly by majority carriers, or minority-charge-carrier devices, in which the current is mainly due to a flow of minority carriers. The device consists of an active channel through which charge carriers, electrons or holes, flow from the source to the drain. Source and drain terminal conductors are connected to the semiconductor through
ohmic contact An ohmic contact is a non- rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law. Low-resistance ohmic contacts are used to allow charge to flow easily in both direc ...
s. The conductivity of the channel is a function of the potential applied across the gate and source terminals. The FET's three terminals are: #source (S), through which the carriers enter the channel. Conventionally, current entering the channel at S is designated by IS. #drain (D), through which the carriers leave the channel. Conventionally, current leaving the channel at D is designated by ID. Drain-to-source voltage is VDS. #gate (G), the terminal that modulates the channel conductivity. By applying voltage to G, one can control ID.


More about terminals

All FETs have ''source'', ''drain'', and ''gate'' terminals that correspond roughly to the ''emitter'', ''collector'', and ''base'' of
BJT A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar t ...
s. Most FETs have a fourth terminal called the ''body'', ''base'', ''bulk'', or '' substrate.'' This fourth terminal serves to
bias Bias is a disproportionate weight ''in favor of'' or ''against'' an idea or thing, usually in a way that is closed-minded, prejudicial, or unfair. Biases can be innate or learned. People may develop biases for or against an individual, a group ...
the transistor into operation; it is rare to make non-trivial use of the body terminal in circuit designs, but its presence is important when setting up the
physical layout Integrated circuit layout, also known IC layout, IC mask layout, or mask design, is the representation of an integrated circuit in terms of planar geometric shapes which correspond to the patterns of metal, oxide, or semiconductor layers that make ...
of an
integrated circuit An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of tiny ...
. The size of the gate, length ''L'' in the diagram, is the distance between source and drain. The ''width'' is the extension of the transistor, in the direction perpendicular to the cross section in the diagram (i.e., into/out of the screen). Typically the width is much larger than the length of the gate. A gate length of 1 µm limits the upper frequency to about 5 GHz, 0.2 µm to about 30 GHz. The names of the terminals refer to their functions. The gate terminal may be thought of as controlling the opening and closing of a physical gate. This gate permits electrons to flow through or blocks their passage by creating or eliminating a channel between the source and drain. Electron-flow from the source terminal towards the drain terminal is influenced by an applied voltage. The body simply refers to the bulk of the semiconductor in which the gate, source and drain lie. Usually the body terminal is connected to the highest or lowest voltage within the circuit, depending on the type of the FET. The body terminal and the source terminal are sometimes connected together since the source is often connected to the highest or lowest voltage within the circuit, although there are several uses of FETs which do not have such a configuration, such as
transmission gate A transmission gate (TG) is an analog gate similar to a relay that can conduct in both directions or block by a control signal with almost any voltage potential. It is a CMOS-based switch, in which PMOS passes a strong 1 but poor 0, and NMOS passes ...
s and
cascode The cascode is a two-stage amplifier that consists of a common-emitter stage feeding into a common-base stage. Compared to a single amplifier stage, this combination may have one or more of the following characteristics: higher input–outpu ...
circuits. Unlike BJTs, the vast majority of FETs are electrically symmetrical. The source and drain terminals can thus be interchanged in practical circuits with no change in operating characteristics or function. This can be confusing when FET's appear to be connected "backwards" in schematic diagrams and circuits because the physical orientation of the FET was decided for other reasons, such as printed circuit layout considerations.


Effect of gate voltage on current

The FET controls the flow of
electron The electron ( or ) is a subatomic particle with a negative one elementary electric charge. Electrons belong to the first generation of the lepton particle family, and are generally thought to be elementary particles because they have no ...
s (or
electron hole In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle which is the lack of an electron at a position where one could exist in an atom or atomic lattice. Since in a normal atom or c ...
s) from the source to drain by affecting the size and shape of a "conductive channel" created and influenced by voltage (or lack of voltage) applied across the gate and source terminals. (For simplicity, this discussion assumes that the body and source are connected.) This conductive channel is the "stream" through which electrons flow from source to drain.


n-channel FET

In an n-channel "depletion-mode" device, a negative gate-to-source voltage causes a
depletion region In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile ...
to expand in width and encroach on the channel from the sides, narrowing the channel. If the active region expands to completely close the channel, the resistance of the channel from source to drain becomes large, and the FET is effectively turned off like a switch (see right figure, when there is very small current). This is called "pinch-off", and the voltage at which it occurs is called the "pinch-off voltage". Conversely, a positive gate-to-source voltage increases the channel size and allows electrons to flow easily (see right figure, when there is a conduction channel and current is large). In an n-channel "enhancement-mode" device, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one. The positive voltage attracts free-floating electrons within the body towards the gate, forming a conductive channel. But first, enough electrons must be attracted near the gate to counter the dopant ions added to the body of the FET; this forms a region with no mobile carriers called a
depletion region In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile ...
, and the voltage at which this occurs is referred to as the
threshold voltage The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important s ...
of the FET. Further gate-to-source voltage increase will attract even more electrons towards the gate which are able to active channel from source to drain; this process is called ''inversion''.


p-channel FET

In a p-channel "depletion-mode" device, a positive voltage from gate to body widens the depletion layer by forcing electrons to the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, positively charged acceptor ions. Conversely, in a p-channel "enhancement-mode" device, a conductive region does not exist and negative voltage must be used to generate a conduction channel.


Effect of drain-to-source voltage on channel

For either enhancement- or depletion-mode devices, at drain-to-source voltages much less than gate-to-source voltages, changing the gate voltage will alter the channel resistance, and drain current will be proportional to drain voltage (referenced to source voltage). In this mode the FET operates like a variable resistor and the FET is said to be operating in a linear mode or ohmic mode. If drain-to-source voltage is increased, this creates a significant asymmetrical change in the shape of the channel due to a gradient of voltage potential from source to drain. The shape of the inversion region becomes "pinched-off" near the drain end of the channel. If drain-to-source voltage is increased further, the pinch-off point of the channel begins to move away from the drain towards the source. The FET is said to be in ''saturation mode''; although some authors refer to it as ''active mode'', for a better analogy with bipolar transistor operating regions. The saturation mode, or the region between ohmic and saturation, is used when amplification is needed. The in-between region is sometimes considered to be part of the ohmic or linear region, even where drain current is not approximately linear with drain voltage. Even though the conductive channel formed by gate-to-source voltage no longer connects source to drain during saturation mode, carriers are not blocked from flowing. Considering again an n-channel enhancement-mode device, a
depletion region In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile ...
exists in the p-type body, surrounding the conductive channel and drain and source regions. The electrons which comprise the channel are free to move out of the channel through the depletion region if attracted to the drain by drain-to-source voltage. The depletion region is free of carriers and has a resistance similar to
silicon Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic ta ...
. Any increase of the drain-to-source voltage will increase the distance from drain to the pinch-off point, increasing the resistance of the depletion region in proportion to the drain-to-source voltage applied. This proportional change causes the drain-to-source current to remain relatively fixed, independent of changes to the drain-to-source voltage, quite unlike its ohmic behavior in the linear mode of operation. Thus, in saturation mode, the FET behaves as a constant-current source rather than as a resistor, and can effectively be used as a voltage amplifier. In this case, the gate-to-source voltage determines the level of constant current through the channel.


Composition

FETs can be constructed from various semiconductors, out of which
silicon Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic ta ...
is by far the most common. Most FETs are made by using conventional bulk semiconductor processing techniques, using a single crystal semiconductor
wafer A wafer is a crisp, often sweet, very thin, flat, light and dry biscuit, often used to decorate ice cream, and also used as a garnish on some sweet dishes. Wafers can also be made into cookies with cream flavoring sandwiched between them. They ...
as the active region, or channel. Among the more unusual body materials are
amorphous silicon Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto ...
,
polycrystalline silicon Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produce ...
or other amorphous semiconductors in
thin-film transistor A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is thin relative to the plane of the device. TFTs are grown on a supporting (but non-conducting) substrate. A common substrate is glass, beca ...
s or organic field-effect transistors (OFETs) that are based on
organic semiconductor Organic semiconductors are solids whose building blocks are pi-bonded molecules or polymers made up by carbon and hydrogen atoms and – at times – heteroatoms such as nitrogen, sulfur and oxygen. They exist in the form of molecular crystals o ...
s; often, OFET gate insulators and electrodes are made of organic materials, as well. Such FETs are manufactured using a variety of materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), and indium gallium arsenide (InGaAs). In June 2011, IBM announced that it had successfully used
graphene Graphene () is an allotrope of carbon consisting of a single layer of atoms arranged in a hexagonal lattice nanostructure.
-based FETs in an
integrated circuit An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of tiny ...
. These transistors are capable of about 2.23 GHz cutoff frequency, much higher than standard silicon FETs.


Types

The channel of a FET is Doping (semiconductor), doped to produce either an n-type
semiconductor A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. ...
or a p-type semiconductor. The drain and source may be doped of opposite type to the channel, in the case of enhancement mode FETs, or doped of similar type to the channel as in depletion mode FETs. Field-effect transistors are also distinguished by the method of insulation between channel and gate. Types of FETs include: *The
MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which d ...
(metal–oxide–semiconductor field-effect transistor) utilizes an insulator (typically SiO2) between the gate and the body. This is by far the most common type of FET. **The DGMOSFET (
dual-gate MOSFET A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be control ...
) or DGMOS, a MOSFET with two insulated gates. **The IGBT (
insulated-gate bipolar transistor An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating lay ...
) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200–3000 V drain-to-source voltage range of operation.
Power MOSFET A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IG ...
s are still the device of choice for drain-to-source voltages of 1 to 200 V. **The JLNT ( Junctionless nanowire transistor) is a type of Field-effect transistor (FET) which channel is one or multiple nanowires and does not present any junction. **The MNOS ( metal–nitride–oxide–semiconductor transistor) utilizes a nitride-oxide layer insulator between the gate and the body. **The
ISFET An ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration (such as H+, see pH scale) changes, the current through the transistor will change accord ...
(ion-sensitive field-effect transistor) can be used to measure ion concentrations in a solution; when the ion concentration (such as H+, see pH electrode) changes, the current through the transistor will change accordingly. **The
BioFET A field-effect transistor-based biosensor, also known as a biosensor field-effect transistor (Bio-FET or BioFET), field-effect biosensor (FEB), or biosensor MOSFET, is a field-effect transistor (based on the MOSFET structure) that is gated by chang ...
(Biologically sensitive field-effect transistor) is a class of sensors/biosensors based on
ISFET An ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration (such as H+, see pH scale) changes, the current through the transistor will change accord ...
technology which are utilized to detect charged molecules; when a charged molecule is present, changes in the electrostatic field at the BioFET surface result in a measurable change in current through the transistor. These include enzyme modified FETs (EnFETs), immunologically modified FETs (ImmunoFETs), gene-modified FETs (GenFETs), DNAFETs, cell-based BioFETs (CPFETs), beetle/chip FETs (BeetleFETs), and FETs based on ion-channels/protein binding. **The DNAFET (
DNA field-effect transistor A DNA field-effect transistor (DNAFET) is a field-effect transistor which uses the field-effect due to the partial charges of DNA molecules to function as a biosensor. The structure of DNAFETs is similar to that of MOSFETs, with the exception of t ...
) is a specialized FET that acts as a
biosensor A biosensor is an analytical device, used for the detection of a chemical substance, that combines a biological component with a physicochemical detector. The ''sensitive biological element'', e.g. tissue, microorganisms, organelles, cell rec ...
, by using a gate made of single-strand DNA molecules to detect matching DNA strands. **
finFET A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, ...
, including
GAAFET A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be control ...
or gate-all-around FET, used on high density processor chips *The
JFET The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. ...
(junction field-effect transistor) uses a reverse biased p–n junction to separate the gate from the body. **The
static induction transistor The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and low noise. It is a vertical structure device with short multichannel. The device was original ...
(SIT) is a type of JFET with a short channel. *The DEPFET is a FET formed in a fully depleted substrate and acts as a sensor, amplifier and memory node at the same time. It can be used as an image (photon) sensor. *The FREDFET (fast-reverse or fast-recovery epitaxial diode FET) is a specialized FET designed to provide a very fast recovery (turn-off) of the body diode, making it convenient for driving inductive loads such as
electric motor An electric motor is an electrical machine that converts electrical energy into mechanical energy. Most electric motors operate through the interaction between the motor's magnetic field and electric current in a wire winding to generate force ...
s, especially medium-powered brushless DC motors. *The HIGFET (heterostructure insulated-gate field-effect transistor) is now used mainly in research. *The MODFET (modulation-doped field-effect transistor) is a
high-electron-mobility transistor A high-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) ...
using a
quantum well A quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occup ...
structure formed by graded doping of the active region. *The TFET ( tunnel field-effect transistor) is based on band-to-band tunneling. * The TQFET (topological quantum field-effect transistor) switches a 2D material from dissipationless
topological insulator A topological insulator is a material whose interior behaves as an electrical insulator while its surface behaves as an electrical conductor, meaning that electrons can only move along the surface of the material. A topological insulator is an ...
('on' state) to conventional insulator ('off' state) using an applied electric field. *The
HEMT A high-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) ...
(
high-electron-mobility transistor A high-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) ...
), also called a HFET (heterostructure FET), can be made using bandgap engineering in a ternary semiconductor such as
AlGaAs Aluminium gallium arsenide (also gallium aluminium arsenide) ( Alx Ga1−x As) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The ''x'' in the formula above is a number between 0 and 1 - this ...
. The fully depleted wide-band-gap material forms the isolation between gate and body. *The
MESFET A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate. Construction MESFETs are constr ...
(metal–semiconductor field-effect transistor) substitutes the
p–n junction A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contai ...
of the JFET with a
Schottky barrier A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary cha ...
; and is used in GaAs and other III-V semiconductor materials. *The NOMFET is a nanoparticle organic memory field-effect transistor. *The GNRFET (graphene nanoribbon field-effect transistor) uses a
graphene nanoribbon Graphene nanoribbons (GNRs, also called nano-graphene ribbons or nano-graphite ribbons) are strips of graphene with width less than 100 nm. Graphene ribbons were introduced as a theoretical model by Mitsutaka Fujita and coauthors to examin ...
for its channel. *The VeSFET (vertical-slit field-effect transistor) is a square-shaped junctionless FET with a narrow slit connecting the source and drain at opposite corners. Two gates occupy the other corners, and control the current through the slit. *The CNTFET ( carbon nanotube field-effect transistor). *The OFET ( organic field-effect transistor) uses an organic semiconductor in its channel. *The QFET ( quantum field effect transistor) takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistor's area of electron conduction. *The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create
Schottky barrier A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary cha ...
s at both the source-channel and drain-channel interfaces. *The GFET is a highly sensitive graphene-based field effect transistor used as
biosensor A biosensor is an analytical device, used for the detection of a chemical substance, that combines a biological component with a physicochemical detector. The ''sensitive biological element'', e.g. tissue, microorganisms, organelles, cell rec ...
s and chemical sensors. Due to the 2 dimensional structure of graphene, along with its physical properties, GFETs offer increased sensitivity, and reduced instances of 'false positives' in sensing applications *The
Fe FET A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate electrode and source-drain conduction region of the device (the channel). Permanent electr ...
uses a
ferroelectric Ferroelectricity is a characteristic of certain materials that have a spontaneous electric polarization that can be reversed by the application of an external electric field. All ferroelectrics are also piezoelectric and pyroelectric, with the ad ...
between the gate, allowing the transistor to retain its state in the absence of bias - such devices may have application as
non-volatile memory Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typic ...
. * VTFET, or Vertical-Transport Field-Effect Transistor, IBM's 2021 modification of
finFET A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, ...
to allow higher density and lower power.


Advantages

Field-effect transistors have high gate-to-drain current resistance, of the order of 100 MΩ or more, providing a high degree of isolation between control and flow. Because base current noise will increase with shaping time, a FET typically produces less noise than a
bipolar junction transistor A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar ...
(BJT), and is found in noise-sensitive electronics such as tuners and
low-noise amplifier A low-noise amplifier (LNA) is an electronic amplifier that amplifies a very low-power signal without significantly degrading its signal-to-noise ratio. An amplifier will increase the power of both the signal and the noise present at its input, ...
s for VHF and satellite receivers. It is relatively immune to radiation. It exhibits no offset voltage at zero drain current and makes an excellent signal chopper. It typically has better thermal stability than a BJT. Because the FETs are controlled by gate charge, once the gate is closed or open, there is no additional power draw, as there would be with a
bipolar junction transistor A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar ...
or with non-latching
relay A relay Electromechanical relay schematic showing a control coil, four pairs of normally open and one pair of normally closed contacts An automotive-style miniature relay with the dust cover taken off A relay is an electrically operated switch ...
s in some states. This allows extremely low-power switching, which in turn allows greater miniaturization of circuits because heat dissipation needs are reduced compared to other types of switches.


Disadvantages

A field-effect transistor has a relatively low gain–bandwidth product compared to a bipolar junction transistor. MOSFETs are very susceptible to overload voltages, thus requiring special handling during installation. The fragile insulating layer of the MOSFET between the gate and the channel makes it vulnerable to
electrostatic discharge Electrostatic discharge (ESD) is a sudden and momentary flow of electric current between two electrically charged objects caused by contact, an electrical short or dielectric breakdown. A buildup of static electricity can be caused by tribocha ...
or changes to threshold voltage during handling. This is not usually a problem after the device has been installed in a properly designed circuit. FETs often have a very low "on" resistance and have a high "off" resistance. However, the intermediate resistances are significant, and so FETs can dissipate large amounts of power while switching. Thus, efficiency can put a premium on switching quickly, but this can cause transients that can excite stray inductances and generate significant voltages that can couple to the gate and cause unintentional switching. FET circuits can therefore require very careful layout and can involve trades between switching speed and power dissipation. There is also a trade-off between voltage rating and "on" resistance, so high-voltage FETs have a relatively high "on" resistance and hence conduction losses.


Failure modes

Field-effect transistors are relatively robust, especially when operated within the temperature and electrical limitations defined by the manufacturer (proper
derating In electronics, derating (or derating) is the operation of a device at less than its rated maximum capability to prolong its life. Typical examples include operations below the maximum power rating, current rating, or voltage rating. In electron ...
). However, modern FET devices can often incorporate a body diode. If the characteristics of the body diode are not taken into consideration, the FET can experience slow body diode behavior, where a parasitic transistor will turn on and allow high current to be drawn from drain to source when the FET is off.


Uses

The most commonly used FET is the
MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which d ...
. The
CMOS Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOS ...
(complementary metal oxide semiconductor) process technology is the basis for modern
digital Digital usually refers to something using discrete digits, often binary digits. Technology and computing Hardware *Digital electronics, electronic circuits which operate using digital signals **Digital camera, which captures and stores digital i ...
integrated circuit An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of tiny ...
s. This process technology uses an arrangement where the (usually "enhancement-mode") p-channel MOSFET and n-channel MOSFET are connected in series such that when one is on, the other is off. In FETs, electrons can flow in either direction through the channel when operated in the linear mode. The naming convention of drain terminal and source terminal is somewhat arbitrary, as the devices are typically (but not always) built symmetrical from source to drain. This makes FETs suitable for switching analog signals between paths (
multiplexing In telecommunications and computer networking, multiplexing (sometimes contracted to muxing) is a method by which multiple analog or digital signals are combined into one signal over a shared medium. The aim is to share a scarce resource - a ...
). With this concept, one can construct a solid-state
mixing board A mixing console or mixing desk is an electronic device for mixing audio signals, used in sound recording and reproduction and sound reinforcement systems. Inputs to the console include microphones, signals from electric or electronic instr ...
, for example. FET is commonly used as an amplifier. For example, due to its large input resistance and low output resistance, it is effective as a buffer in
common-drain In electronics, a common-drain amplifier, also known as a source follower, is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit (NMOS) the gate terminal of the t ...
(source follower) configuration. IGBTs are used in switching internal combustion engine ignition coils, where fast switching and voltage blocking capabilities are important.


Source-gated transistor

Source-gated transistors are more robust to manufacturing and environmental issues in large-area electronics such as display screens, but are slower in operation than FETs.


See also

* Chemical field-effect transistor *
CMOS Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOS ...
* FET amplifier *
Field effect (semiconductor) In physics, the field effect refers to the modulation of the electrical conductivity of a material by the application of an external electric field. In a metal, the electron density that responds to applied fields is so large that an external el ...
*
FinFET A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal-oxide-semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, ...
*
FlowFET A flowFET is a microfluidic component which allows the rate of flow of liquid in a microfluidic channel to be modulated by the electrical potential applied to it. In this way, it behaves as a microfluidic analogue to the field effect transistor, ex ...
*
Multigate device A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be control ...


References


External links


PBS The Field Effect Transistor
WeCanFigureThisOut.org
Junction Field Effect TransistorWinning the Battle Against Latchup in CMOS Analog SwitchesField Effect Transistors in Theory and Practice
* {{DEFAULTSORT:Field-Effect Transistor Transistor types Field-effect transistors Arab inventions Austrian inventions Egyptian inventions Hungarian inventions Japanese inventions South Korean inventions