An avalanche photodiode (APD) is a highly sensitive
semiconductor
A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. ...
photodiode detector
A sensor is a device that produces an output signal for the purpose of sensing a physical phenomenon.
In the broadest definition, a sensor is a device, module, machine, or subsystem that detects events or changes in its environment and sends ...
that exploits the
photoelectric effect
The photoelectric effect is the emission of electrons when electromagnetic radiation, such as light, hits a material. Electrons emitted in this manner are called photoelectrons. The phenomenon is studied in condensed matter physics, and solid sta ...
to convert light into electricity. From a functional standpoint, they can be regarded as the semiconductor analog of
photomultiplier tubes. The avalanche photodiode (APD) was invented by Japanese engineer
Jun-ichi Nishizawa
was a Japanese engineer and inventor. He is known for his electronic inventions since the 1950s, including the PIN diode, static induction transistor, static induction thyristor, SIT/SITh. His inventions contributed to the development of ...
in 1952. However, study of avalanche breakdown, microplasma defects in silicon and germanium and the investigation of optical detection using p-n junctions predate this patent. Typical applications for APDs are
laser rangefinders, long-range
fiber-optic
An optical fiber, or optical fibre in Commonwealth English, is a flexible, transparent fiber made by drawing glass (silica) or plastic to a diameter slightly thicker than that of a human hair. Optical fibers are used most often as a means t ...
telecommunication
Telecommunication is the transmission of information by various types of technologies over wire, radio, optical, or other electromagnetic systems. It has its origin in the desire of humans for communication over a distance greater than that fe ...
, and quantum sensing for control algorithms. New applications include
positron emission tomography and
particle physics
Particle physics or high energy physics is the study of fundamental particles and forces that constitute matter and radiation. The fundamental particles in the universe are classified in the Standard Model as fermions (matter particles) an ...
. It was discovered in 2020 that adding
graphene
Graphene () is an allotrope of carbon consisting of a single layer of atoms arranged in a hexagonal lattice nanostructure. layer can prevent degradation over time to keep avalanche photodiode
''like new'' which is important in shrinking their size and costs for many diverse applications & bringing devices out of vacuum tubes into digital age.
Principle of operation
By applying a high
reverse bias
Reverse or reversing may refer to:
Arts and media
* ''Reverse'' (Eldritch album), 2001
* ''Reverse'' (2009 film), a Polish comedy-drama film
* ''Reverse'' (2019 film), an Iranian crime-drama film
* ''Reverse'' (Morandi album), 2005
* ''Reverse'' ...
voltage (typically 100–200 V in
silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic ta ...
), APDs show an internal current
gain effect (around 100) due to
impact ionization
Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers. For example, in semiconductors, an electron (or Electron hole, hole) with enough kinetic energy can kno ...
(
avalanche effect
In cryptography, the avalanche effect is the desirable property of cryptographic algorithms, typically block ciphers and cryptographic hash functions, wherein if an input is changed slightly (for example, flipping a single bit), the output changes ...
). However, some silicon APDs employ alternative
doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied (> 1500 V) before
breakdown
Breakdown may refer to:
Breaking down
*Breakdown (vehicle), failure of a motor vehicle in such a way that it cannot be operated
*Chemical decomposition, also called chemical breakdown, the breakdown of a substance into simpler components
*Decompo ...
is reached and hence a greater operating gain (> 1000). In general, the higher the reverse voltage, the higher the gain. Among the various expressions for the APD multiplication factor (''M''), an instructive expression is given by the formula
:
where ''L'' is the space-charge boundary for electrons, and
is the multiplication coefficient for electrons (and holes). This coefficient has a strong dependence on the applied electric field strength, temperature, and doping profile. Since APD gain varies strongly with the applied reverse bias and temperature, it is necessary to control the reverse voltage to keep a stable gain. Avalanche photodiodes therefore are more sensitive compared to other semiconductor
photodiodes.
If very high gain is needed (10
5 to 10
6), detectors related to APDs (
single-photon avalanche diode
A single-photon avalanche diode (SPAD) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours. As with photodiodes and APDs, a SPA ...
s) can be used and operated with a reverse voltage above a typical APD's
breakdown voltage
The breakdown voltage of an insulator is the minimum voltage that causes a portion of an insulator to experience electrical breakdown and become electrically conductive.
For diodes, the breakdown voltage is the minimum reverse voltage that mak ...
. In this case, the photodetector needs to have its signal current limited and quickly diminished. Active and passive current-quenching techniques have been used for this purpose. SPADs that operate in this high-gain regime are sometimes referred to being in Geiger mode. This mode is particularly useful for single-photon detection, provided that the dark count event rate and afterpulsing probability are sufficiently low.
Materials
In principle, any semiconductor material can be used as a multiplication region:
* Silicon will detect in the visible and near infrared, with low multiplication noise (excess noise).
*
Germanium (Ge) will detect
infrared
Infrared (IR), sometimes called infrared light, is electromagnetic radiation (EMR) with wavelengths longer than those of visible light. It is therefore invisible to the human eye. IR is generally understood to encompass wavelengths from around ...
out to a wavelength of 1.7 µm, but has high multiplication noise.
*
InGaAs
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are ( group III) elements of the periodic table wh ...
will detect out to longer than 1.6 µm and has less multiplication noise than Ge. It is normally used as the absorption region of a
heterostructure A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in m ...
diode, most typically involving
InP
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (" zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
Manufacturing
Indium phosphide c ...
as a substrate and as a multiplication layer.
This material system is compatible with an absorption window of roughly 0.9–1.7 µm.
InGaAs
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are ( group III) elements of the periodic table wh ...
exhibits a high
absorption coefficient
The linear attenuation coefficient, attenuation coefficient, or narrow-beam attenuation coefficient characterizes how easily a volume of material can be penetrated by a beam of light, sound, particles, or other energy or matter. A coefficient valu ...
at the wavelengths appropriate to high-speed telecommunications using
optical fiber
An optical fiber, or optical fibre in Commonwealth English, is a flexible, transparent fiber made by drawing glass ( silica) or plastic to a diameter slightly thicker than that of a human hair. Optical fibers are used most often as a mea ...
s, so only a few micrometres of
InGaAs
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are ( group III) elements of the periodic table wh ...
are required for nearly 100% light absorption.
[ The excess noise factor is low enough to permit a gain-bandwidth product in excess of 100 GHz for a simple InP/InGaAs system, and up to 400 GHz for InGaAs on silicon. Therefore, high-speed operation is possible: commercial devices are available to speeds of at least 10 Gbit/s.]
* Gallium-nitride–based diodes have been used for operation with ultraviolet
Ultraviolet (UV) is a form of electromagnetic radiation with wavelength from 10 nm (with a corresponding frequency around 30 PHz) to 400 nm (750 THz), shorter than that of visible light, but longer than X-rays. UV radiation ...
light.
* HgCdTe Hg1−xCdxTe or mercury cadmium telluride (also cadmium mercury telluride, MCT, MerCad Telluride, MerCadTel, MerCaT or CMT) is a chemical compound of cadmium telluride (CdTe) and mercury telluride (HgTe) with a tunable bandgap spanning the shortwav ...
-based diodes operate in the infrared, typically at wavelengths up to about 14 µm, but require cooling to reduce dark currents. Very low excess noise can be achieved in this material system.
Performance limits
APD applicability and usefulness depends on many parameters. Two of the larger factors are: quantum efficiency, which indicates how well incident optical photons are absorbed and then used to generate primary charge carriers; and total leakage current, which is the sum of the dark current, photocurrent and noise. Electronic dark-noise components are series and parallel noise. Series noise, which is the effect of shot noise, is basically proportional to the APD capacitance, while the parallel noise is associated with the fluctuations of the APD bulk and surface dark currents.
Gain noise, excess noise factor
Another noise source is the excess noise factor, ENF. It is a multiplicative correction applied to the noise that describes the increase in the statistical noise, specifically Poisson noise, due to the multiplication process. The ENF is defined for any device, such as photomultiplier tubes, silicon solid-state photomultipliers, and APDs, that multiplies a signal, and is sometimes referred to as "gain noise". At a gain ''M'', it is denoted by ENF(''M'') and can often be expressed as
:
where is the ratio of the hole impact ionization rate to that of electrons. For an electron multiplication device it is given by the hole impact ionization rate divided by the electron impact ionization rate. It is desirable to have a large asymmetry between these rates to minimize ENF(''M''), since ENF(''M'') is one of the main factors that limit, among other things, the best possible energy resolution obtainable.
Conversion noise, Fano factor
The noise term for an APD may also contain a Fano factor, which is a multiplicative correction applied to the Poisson noise associated with the conversion of the energy deposited by a charged particle to the electron-hole pairs, which is the signal before multiplication. The correction factor describes the decrease in the noise, relative to Poisson statistics, due to the uniformity of conversion process and the absence of, or weak coupling to, bath states in the conversion process. In other words, an "ideal" semiconductor would convert the energy of the charged particle into an exact and reproducible number of electron hole pairs to conserve energy; in reality, however, the energy deposited by the charged particle is divided into the generation of electron hole pairs, the generation of sound, the generation of heat, and the generation of damage or displacement. The existence of these other channels introduces a stochastic process, where the amount of energy deposited into any single process varies from event to event, even if the amount of energy deposited is the same.
Further influences
The underlying physics associated with the excess noise factor (gain noise) and the Fano factor (conversion noise) is very different. However, the application of these factors as multiplicative corrections to the expected Poisson noise is similar. In addition to excess noise, there are limits to device performance associated with the capacitance, transit times and avalanche multiplication time.[ The capacitance increases with increasing device area and decreasing thickness. The transit times (both electrons and holes) increase with increasing thickness, implying a tradeoff between capacitance and transit time for performance. The avalanche multiplication time times the gain is given to first order by the gain-bandwidth product, which is a function of the device structure and most especially .
]
See also
* Avalanche diode
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current co ...
* Avalanche breakdown
Avalanche breakdown (or avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good ...
* Single-photon avalanche diode
A single-photon avalanche diode (SPAD) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours. As with photodiodes and APDs, a SPA ...
References
Further reading
* Avalanche photodiode - A User Guid
* Avalanche Photodiode - Low noise APD receiver
* gh
* {{cite journal, doi=10.1063/1.364225, title=Breakdown characteristics in InP/InGaAs avalanche photodiode with p-i-n multiplication layer structure, year=1997, last1=Hyun, first1=Kyung-Sook, last2=Park, journal=Journal of Applied Physics, volume=81, pages=974, first2=Chan-Yong, issue=2, bibcode = 1997JAP....81..974H
Selecting the right APD
Pulsed Laserdiodes and Avalanche Photodiodes for Industrial Applications
* Excelitas Technologies Photonic Detector
Optical devices
Optical diodes
Particle detectors
Photodetectors
Japanese inventions