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Tunneling Diode
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today. Tunnel diodes have a heavily doped positive-to-negative (P-N) junction that is about 10 nm (100 Ã…) wide. The heavy doping results in a broken band gap, where conduction band electron states on the N-side are more or less ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Jumper (computing)
In electronics and particularly computing, a jumper is a short length of conductor used to close, open or bypass part of an electronic circuit. They are typically used to set up or configure printed circuit boards, such as the motherboards of computers. The process of setting a jumper is often called strapping. A strapping option is a hardware configuration setting usually sensed only during power-up or bootstrapping of a device (or even a single chip). Design Jumper pins (points to be connected by the jumper) are arranged in groups called ''jumper blocks'', each group having at least one pair of contact points. An appropriately sized conductive sleeve called a jumper, or more technically, a shunt jumper, is slipped over the pins to complete the circuit. A two-pin jumper only allows to choose between two Boolean states, whereas a three-pin jumper allows to select between three states. Jumpers must be electrically conducting; they are usually encased in a non-conducti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
William Shockley
William Bradford Shockley Jr. (February 13, 1910 – August 12, 1989) was an American physicist and inventor. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain. The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect". Partly as a result of Shockley's attempts to commercialize a new transistor design in the 1950s and 1960s, California's Silicon Valley became a hotbed of electronics innovation. In his later life, while a professor of electrical engineering at Stanford University and afterward, Shockley became widely known for his racist views and advocacy of eugenics. Early life and education Shockley was born to American parents in London on February 13, 1910, and was raised in his family's hometown of Palo Alto, California, from the age of three. His father, William Hillman Shockley, was a mining engineer who speculated in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski process, Czoch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Germanium
Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was discovered comparatively late in the discovery of the elements. Germanium ranks near fiftieth in relative abundance of the elements in the Earth's crust. In 1869, Dmitri Mendeleev predicted its existence and some of its properties from its position on his periodic table, and called the element ekasilicon. In 1886, Clemens Winkler at Freiberg University found the new element, along with silver and sulfur, in the mineral argyrodite. Winkler named the element after his country, Germany. Germanium is mined primarily from sphalerite (the primary ore of zinc), though germanium is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Hole
In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle which is the lack of an electron at a position where one could exist in an atom or atomic lattice. Since in a normal atom or crystal lattice the negative charge of the electrons is balanced by the positive charge of the atomic nuclei, the absence of an electron leaves a net positive charge at the hole's location. Holes in a metal or semiconductor crystal lattice can move through the lattice as electrons can, and act similarly to positively-charged particles. They play an important role in the operation of semiconductor devices such as transistors, diodes and integrated circuits. If an electron is excited into a higher state it leaves a hole in its old state. This meaning is used in Auger electron spectroscopy (and other x-ray techniques), in computational chemistry, and to explain the low electron-electron scattering-rate in crystals (metals, semiconduct ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Valence Band
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a material, the valence band is located below the Fermi level, while the conduction band is located above it. The distinction between the valence and conduction bands is meaningless in metals, because conduction occurs in one or more partially filled bands that take on the properties of both the valence and conduction bands. Band gap In semiconductors and insulators the two bands are separated by a band gap, while in semimetals the bands overlap. A band gap is an energy range in a solid where no electron states can exist due to the quantization of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Configuration
In atomic physics and quantum chemistry, the electron configuration is the distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals. For example, the electron configuration of the neon atom is , meaning that the 1s, 2s and 2p subshells are occupied by 2, 2 and 6 electrons respectively. Electronic configurations describe each electron as moving independently in an orbital, in an average field created by all other orbitals. Mathematically, configurations are described by Slater determinants or configuration state functions. According to the laws of quantum mechanics, for systems with only one electron, a level of energy is associated with each electron configuration and in certain conditions, electrons are able to move from one configuration to another by the emission or absorption of a quantum of energy, in the form of a photon. Knowledge of the electron configuration of different atoms is useful in understanding the structu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Conduction Band
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a material, the valence band is located below the Fermi level, while the conduction band is located above it. The distinction between the valence and conduction bands is meaningless in metals, because conduction occurs in one or more partially filled bands that take on the properties of both the valence and conduction bands. Band gap In semiconductors and insulators the two bands are separated by a band gap, while in semimetals the bands overlap. A band gap is an energy range in a solid where no electron states can exist due to the quantization of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Band Gap
In solid-state physics, a band gap, also called an energy gap, is an energy range in a solid where no electronic states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference (in electron volts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote a valence electron bound to an atom to become a conduction electron, which is free to move within the crystal lattice and serve as a charge carrier to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ångström
The angstromEntry "angstrom" in the Oxford online dictionary. Retrieved on 2019-03-02 from https://en.oxforddictionaries.com/definition/angstrom.Entry "angstrom" in the Merriam-Webster online dictionary. Retrieved on 2019-03-02 from https://www.merriam-webster.com/dictionary/angstrom. (, ; , ) or ångström is a metric unit of length equal to m; that is, one ten-billionth ( US) of a metre, a hundred-millionth of a centimetre,Entry "angstrom" in the Oxford English Dictionary, 2nd edition (1986). Retrieved on 2021-11-22 from https://www.oed.com/oed2/00008552. 0.1 nanometre, or 100 picometres. Its symbol is Å, a letter of the Swedish alphabet. The unit is named after the Swedish physicist Anders Jonas Ångström (1814–1874). The angstrom is often used in the natural sciences and technology to express sizes of atoms, molecules, microscopic biological structures, and lengths of chemical bonds, arrangement of atoms in crystals,Arturas Vailionis (2015):Geometry of Crystals Lect ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
P–n Junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electrical current to pass through the junction only in one direction. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant). If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes. p–n junctions are elementary "building blocks" of semiconductor electronic devices such as diodes, transistors, solar cells, light-emitting diodes (LEDs) ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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