Static Induction Thyristor
The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state. It has low noise, low distortion, high audio frequency power capability. The turn-on and turn-off times are very short, typically 0.25 microseconds. History The first static induction thyristor was invented by Japanese engineer Jun-ichi Nishizawa in 1975. It was capable of conducting large currents with a low forward bias and had a small turn-off time. It had a self controlled gate turn-off thyristor that was commercially available through Tokyo Electric Co. (now Toyo Engineering Corporation) in 1988. The initial device consisted of a p+nn+ diode and a buried p+ grid. In 1999, an analytical model of the SITh was developed for the PSPICE circuit simulator. In 2010, a newer version of SITh was developed by Zhang Caizhen, Wang Yongshun, Liu ...
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Thyristor
A thyristor () is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts exclusively as a bistable switch (or a latch), conducting when the gate receives a current trigger, and continuing to conduct until the voltage across the device is reversed biased, or until the voltage is removed (by some other means). There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its Gate lead controls the larger current of the Anode to Cathode path. In a two-lead thyristor, conduction begins when the potential difference between the Anode and Cathode themselves is sufficiently large (breakdown voltage). Some sources define silicon-controlled rectifier (SCR) and thyristor as synonymous. Other sources define thyristors as more complex devices that incorporate at least four layers of alternating N-type and P-type substrate. The first thyristor devices were ...
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