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Single-photon Avalanche Diode
A single-photon avalanche diode (SPAD), also called Geiger-mode avalanche photodiode (G-APD or GM-APD) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours. As with photodiodes and APDs, a SPAD is based around a semi-conductor P–n junction, p-n junction that can be illuminated with ionizing radiation such as gamma, x-rays, beta and alpha particles along with a wide portion of the electromagnetic spectrum from ultraviolet (UV) through the visible wavelengths and into the infrared (IR). In a photodiode, with a low Reverse bias, reverse bias voltage, the leakage current changes linearly with absorption of photons, i.e. the liberation of current carriers (electrons and/or holes) due to the internal photoelectric effect. However, in a SPAD, the reverse bias is so high that a phenomenon called Impact ionization, impact ionisation occurs which is able to cause an avalanch ...
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Breakdown Voltage
The breakdown voltage of an insulator (electrical), insulator is the minimum voltage that causes a portion of an insulator to experience electrical breakdown and become electrically Conductor (material), conductive. For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a ''forward breakdown voltage''. Electrical breakdown Materials are often classified as electrical conductor, conductors or Insulator (electricity), insulators based on their resistivity. A conductor is a substance which contains many mobile charged particles called charge carriers which are free to move about inside the material. An electric field is created across a piece of the material by applying a voltage difference between electrical contacts on different sides of the material. The force of the field causes the charge carriers within the material to move, creating an electric current from the positive co ...
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Quantum Key Distribution
Quantum key distribution (QKD) is a secure communication method that implements a cryptographic protocol involving components of quantum mechanics. It enables two parties to produce a shared random secret key known only to them, which then can be used to encrypt and decrypt messages. The process of quantum key distribution is not to be confused with quantum cryptography, as it is the best-known example of a quantum-cryptographic task. An important and unique property of quantum key distribution is the ability of the two communicating users to detect the presence of any third party trying to gain knowledge of the key. This results from a fundamental aspect of quantum mechanics: the process of measuring a quantum system in general disturbs the system. A third party trying to eavesdrop on the key must in some way measure it, thus introducing detectable anomalies. By using quantum superpositions or quantum entanglement and transmitting information in quantum states, a communication ...
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Fluorescence-lifetime Imaging Microscopy
Fluorescence-lifetime imaging microscopy or FLIM is an imaging technique based on the differences in the exponential decay rate of the photon emission of a fluorophore from a sample. It can be used as an imaging technique in confocal microscopy, two-photon excitation microscopy, and multiphoton tomography. The fluorescence lifetime (FLT) of the fluorophore, rather than its intensity, is used to create the image in FLIM. Fluorescence lifetime depends on the local micro-environment of the fluorophore, thus precluding any erroneous measurements in fluorescence intensity due to change in brightness of the light source, background light intensity or limited photo-bleaching. This technique also has the advantage of minimizing the effect of photon scattering in thick layers of sample. Being dependent on the micro-environment, lifetime measurements have been used as an indicator for pH, viscosity and chemical species concentration. Fluorescence lifetimes A fluorophore which is excited ...
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Positron Emission Tomography
Positron emission tomography (PET) is a functional imaging technique that uses radioactive substances known as radiotracers to visualize and measure changes in metabolic processes, and in other physiological activities including blood flow, regional chemical composition, and absorption. Different tracers are used for various imaging purposes, depending on the target process within the body, such as: * Fluorodeoxyglucose ( 18F">sup>18FDG or FDG) is commonly used to detect cancer; * 18Fodium fluoride">sup>18Fodium fluoride (Na18F) is widely used for detecting bone formation; * Oxygen-15 (15O) is sometimes used to measure blood flow. PET is a common imaging technique, a medical scintillography technique used in nuclear medicine. A radiopharmaceutical—a radioisotope attached to a drug—is injected into the body as a tracer. When the radiopharmaceutical undergoes beta plus decay, a positron is emitted, and when the positron interacts with an ordinary electron, the tw ...
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Time-of-flight Camera
A time-of-flight camera (ToF camera), also known as time-of-flight sensor (ToF sensor), is a range imaging camera system for measuring distances between the camera and the subject for each point of the image based on time-of-flight, the round trip time of an artificial light signal, as provided by a laser or an LED. Laser-based time-of-flight cameras are part of a broader class of scannerless LIDAR, in which the entire scene is captured with each laser pulse, as opposed to point-by-point with a laser beam such as in scanning LIDAR systems. Time-of-flight camera products for civil applications began to emerge around 2000, as the semiconductor processes allowed the production of components fast enough for such devices. The systems cover ranges of a few centimeters up to several kilometers. Types of devices Several different technologies for time-of-flight cameras have been developed. RF-modulated light sources with phase detectors Photonic Mixer Devices (PMD), the Swiss Ranger, ...
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LIDAR
Lidar (, also LIDAR, an acronym of "light detection and ranging" or "laser imaging, detection, and ranging") is a method for determining ranging, ranges by targeting an object or a surface with a laser and measuring the time for the reflected light to return to the receiver. Lidar may operate in a fixed direction (e.g., vertical) or it may scan multiple directions, in a special combination of 3-D scanning and laser scanning. Lidar has terrestrial, airborne, and mobile applications. It is commonly used to make high-resolution maps, with applications in surveying, geodesy, geomatics, archaeology, geography, geology, geomorphology, seismology, forestry, atmospheric physics, laser guidance, airborne laser swathe mapping (ALSM), and Mars Orbiter Laser Altimeter, laser altimetry. It is used to make digital 3D modeling, 3-D representations of areas on the Earth's surface and ocean bottom of the intertidal and near coastal zone by varying the wavelength of light. It has also been in ...
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CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", , ) is a type of MOSFET, metal–oxide–semiconductor field-effect transistor (MOSFET) semiconductor device fabrication, fabrication process that uses complementary and symmetrical pairs of p-type semiconductor, p-type and n-type semiconductor, n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including Nonvolatile BIOS memory, CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data conversion, data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. In 1948, Bardeen and Brattain patented an insulated-gate transistor (IGFET) with an inversion layer. Bardeen's concept forms the basis of CMOS technology today. The CMOS process was presented by Fairchild Semico ...
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InGaAs
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics. The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications. Nomenclature Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards the preferred nomenclature for the alloy is GaxIn1-xAs where the group-III elements appear in order of increasing atomic number, as in the related alloy system AlxGa1-xAs. By far, the most ...
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III-V
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows ...
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Germanium
Germanium is a chemical element; it has Symbol (chemistry), symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid or a nonmetal in the carbon group that is chemically similar to silicon. Like silicon, germanium naturally Chemical reaction, reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was found comparatively late in the Timeline of chemical element discoveries, discovery of the elements. Germanium ranks 50th Abundance of elements in Earth's crust, in abundance of the elements in the Earth's crust. In 1869, Dmitri Mendeleev Mendeleev's predicted elements, predicted its existence and some of its Chemical property, properties from its position on his periodic table, and called the element ekasilicon. On February 6, 1886, Clemens Winkler at Freiberg University found the new element, along with silver and sulfur, in the mineral argyrodite. Winkle ...
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Silicon
Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid (sometimes considered a non-metal) and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Silicon is a significant element that is essential for several physiological and metabolic processes in plants. Silicon is widely regarded as the predominant semiconductor material due to its versatile applications in various electrical devices such as transistors, solar cells, integrated circuits, and others. These may be due to its significant band gap, expansive optical transmission range, extensive absorption spectrum, surface roughening, and effective anti-reflection coating. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to p ...
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