P–n Diode
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P–n Diode
This article provides a more detailed explanation of p–n diode behavior than is found in the articles p–n junction or diode. A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a ''p''-type semiconducting layer to an ''n''-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of radio signals, and emitting and detecting light. Structure The figure shows two of the many possible structures used for ''p–n'' semiconductor diodes, both adapted to increase the voltage the devices can withstand in reverse bias. The top structure uses a mesa to avoid a sharp curvature of the ''p+-''region next to the adjoining ''n-''layer. The bottom structure uses a lightly doped ''p-''guard-ring at the edge of the sharp corner of the ''p+-''layer to spread the voltage out over a larger distance and r ...
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Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ...
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Poisson's Equation
Poisson's equation is an elliptic partial differential equation of broad utility in theoretical physics. For example, the solution to Poisson's equation is the potential field caused by a given electric charge or mass density distribution; with the potential field known, one can then calculate electrostatic or gravitational (force) field. It is a generalization of Laplace's equation, which is also frequently seen in physics. The equation is named after French mathematician and physicist Siméon Denis Poisson. Statement of the equation Poisson's equation is \Delta\varphi = f where \Delta is the Laplace operator, and f and \varphi are real or complex-valued functions on a manifold. Usually, f is given and \varphi is sought. When the manifold is Euclidean space, the Laplace operator is often denoted as and so Poisson's equation is frequently written as \nabla^2 \varphi = f. In three-dimensional Cartesian coordinates, it takes the form \left( \frac + \frac + \frac \right)\varphi ...
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Parallel Plate Capacitor
A capacitor is a device that stores electrical energy in an electric field by virtue of accumulating electric charges on two close surfaces insulated from each other. It is a passive electronic component with two terminals. The effect of a capacitor is known as capacitance. While some capacitance exists between any two electrical conductors in proximity in a circuit, a capacitor is a component designed to add capacitance to a circuit. The capacitor was originally known as the condenser, a term still encountered in a few compound names, such as the ''condenser microphone''. The physical form and construction of practical capacitors vary widely and many types of capacitor are in common use. Most capacitors contain at least two electrical conductors often in the form of metallic plates or surfaces separated by a dielectric medium. A conductor may be a foil, thin film, sintered bead of metal, or an electrolyte. The nonconducting dielectric acts to increase the capacitor's charg ...
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Shockley Diode Equation
The ''Shockley diode equation'' or the ''diode law'', named after transistor co-inventor William Shockley of Bell Telephone Laboratories, gives the I–V (current-voltage) characteristic of an idealized diode in either forward or reverse bias (applied voltage): :I=I_\mathrm \left( e^\frac - 1 \right) where :''I'' is the diode current, :''I''S is the reverse bias saturation current (or scale current), :''V''D is the voltage across the diode, :''V''T is the thermal voltage ''kT''/''q'' (Boltzmann constant times temperature divided by electron charge), and :''n'' is the ''ideality factor'', also known as the ''quality factor'' or sometimes ''emission coefficient''. The equation is called the ''Shockley ideal diode equation'' when ''n'', the ideality factor, is set equal to 1. The ideality factor ''n'' typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material and is set equal to 1 for the case of an "ideal" diode ...
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Photodiode
A photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The package may include lenses or optical filters. Devices designed for use specially as a photodiode use a PIN junction rather than a p–n junction, to increase the speed of response. Photodiodes usually have a slower response time as their surface area increases. A photodiode is designed to operate in reverse bias. A solar cell used to generate electric solar power is a large area photodiode. Photodiodes are used in scientific and industrial instruments to measure light intensity, either for its own sake or as a measure of some other property (density of smoke, for example). A photodiode can be used as the receiver of data encoded on an infrared beam, as in household remote controls. Photodiodes can be used to form an optocoupler, allowing tra ...
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Quasi-Fermi Levels
A quasi Fermi level (also called imref, which is "fermi" spelled backwards) is a term used in quantum mechanics and especially in solid state physics for the Fermi level (chemical potential of electrons) that describes the population of electrons separately in the conduction band and valence band, when their populations are displaced from equilibrium. This displacement could be caused by the application of an external voltage, or by exposure to light of energy E>E_g, which alter the populations of electrons in the conduction band and valence band. Since recombination rate (the rate of equilibration between bands) tends to be much slower than the energy relaxation rate within each band, the conduction band and valence band can each have an individual population that is internally in equilibrium, even though the bands are not in equilibrium with respect to exchange of electrons. The displacement from equilibrium is such that the carrier populations can no longer be described by a si ...
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Quasi-Fermi Level
A quasi Fermi level (also called imref, which is "fermi" spelled backwards) is a term used in quantum mechanics and especially in solid state physics for the Fermi level (chemical potential of electrons) that describes the population of electrons separately in the conduction band and valence band, when their populations are displaced from equilibrium. This displacement could be caused by the application of an external voltage, or by exposure to light of energy E>E_g, which alter the populations of electrons in the conduction band and valence band. Since recombination rate (the rate of equilibration between bands) tends to be much slower than the energy relaxation rate within each band, the conduction band and valence band can each have an individual population that is internally in equilibrium, even though the bands are not in equilibrium with respect to exchange of electrons. The displacement from equilibrium is such that the carrier populations can no longer be described by a si ...
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Light Emitting Diode
A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device. Appearing as practical electronic components in 1962, the earliest LEDs emitted low-intensity infrared (IR) light. Infrared LEDs are used in remote-control circuits, such as those used with a wide variety of consumer electronics. The first visible-light LEDs were of low intensity and limited to red. Early LEDs were often used as indicator lamps, replacing small incandescent bulbs, and in seven-segment displays. Later developments produced LEDs available in visible, ultraviolet (UV), ...
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Diffusion Length
Diffusion is the net movement of anything (for example, atoms, ions, molecules, energy) generally from a region of higher concentration to a region of lower concentration. Diffusion is driven by a gradient in Gibbs free energy or chemical potential. It is possible to diffuse "uphill" from a region of lower concentration to a region of higher concentration, like in spinodal decomposition. The concept of diffusion is widely used in many fields, including physics (particle diffusion), chemistry, biology, sociology, economics, and finance (diffusion of people, ideas, and price values). The central idea of diffusion, however, is common to all of these: a substance or collection undergoing diffusion spreads out from a point or location at which there is a higher concentration of that substance or collection. A gradient is the change in the value of a quantity, for example, concentration, pressure, or temperature with the change in another variable, usually distance. A change in c ...
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Carrier Lifetime
A definition in semiconductor physics, carrier lifetime is defined as the average time it takes for a minority carrier to recombine. The process through which this is done is typically known as minority carrier recombination. The energy released due to recombination can be either thermal, thereby heating up the semiconductor (''thermal recombination'' or non-radiative recombination, one of the sources of waste heat in semiconductors), or released as photons (''optical recombination'', used in LEDs and semiconductor lasers). The carrier lifetime can vary significantly depending on the materials and construction of the semiconductor. Carrier lifetime plays an important role in bipolar transistors and solar cells. In indirect band gap semiconductors, the carrier lifetime strongly depends on the concentration of recombination centers. Gold atoms act as highly efficient recombination centers, silicon for some high switching speed diodes and transistors is therefore alloyed with ...
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Carrier Generation And Recombination
In the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes. The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition. Overview Like other solids, semiconductor materials have an electronic band structure determined by the crystal properties of the material ...
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