|
Overdrive Voltage
Overdrive voltage, usually abbreviated as VOV, is typically referred to in the context of MOSFET transistors. The overdrive voltage is defined as the voltage between transistor gate and source (VGS) in excess of the threshold voltage (VTH) where VTH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity). Due to this definition, overdrive voltage is also known as "excess gate voltage" or "effective voltage." Overdrive voltage can be found using the simple equation: VOV = VGS − VTH. Technology VOV is important as it directly affects the output drain terminal current (ID) of the transistor, an important property of amplifier circuits. By increasing VOV, ID can be increased until Saturation current, saturation is reached. Overdrive voltage is also important because of its relationship to VDS, the drain voltage relative to the source, which can be used to determine the region of operation of the MOSFET. The ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistors
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually construc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Saturation Current
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage. ''I''S, the reverse bias saturation current for an ideal p–n diode, is given by: : I_\text = e A n_\text^2 \left( \frac \sqrt + \frac \sqrt \right),\, where :''e'' is elementary charge :''A'' is the cross-sectional area :''D''p, ''D''n are the diffusion coefficient Diffusivity, mass diffusivity or diffusion coefficient is a proportionality constant between the molar flux due to molecular diffusion and the gradient in the concentration of the species (or the driving force for diffusion). Diffusivity is enco ...s of holes and electrons, respectively, :''N''D, ''N''A are the donor and acceptor concentrations at the n side and p side, respectively, :''n''i is the intrinsic carrier co ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronic Amplifier
An amplifier, electronic amplifier or (informally) amp is an electronic device that can increase the magnitude of a Signal (information theory), signal (a time-varying voltage or Electric current, current). It may increase the power (physics), power significantly, or its main effect may be to boost the voltage or current (power amplifier, power, voltage or current amplifier). It is a two-port network, two-port electronic circuit that uses electric power from a power supply to increase the amplitude of a signal applied to its input terminals, producing a greater amplitude signal at its output. The ratio of output to input voltage, current, or power is termed gain (electronics), gain (voltage, current, or power gain). An amplifier, by definition has gain greater than unity (if the gain is less than unity, the device is an attenuator (electronics), attenuator). An amplifier can either be a separate piece of equipment or an electrical circuit contained within another device. Amp ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Short-channel Effect
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation. See also * Channel length modulation * Reverse short-channel effect In MOSFETs, reverse short-channel effect (RSCE) is an increase of threshold voltage with decreasing channel length; this is the opposite of the usual short-channel effect. The difference comes from changes in doping profiles used in modern smal ... References MOSFETs Transistor modeling {{electronics-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Biasing
In electronics, biasing is the setting of DC (direct current) operating conditions (current and voltage) of an active device in an amplifier. Many electronic devices, such as diodes, transistors and vacuum tubes, whose function is processing time-varying ( AC) signals, also require a steady (DC) current or voltage at their terminals to operate correctly. This current or voltage is called ''bias''. The AC signal applied to them is superposed on this DC bias current or voltage. The operating point of a device, also known as bias point, quiescent point, or Q-point, is the DC voltage or current at a specified terminal of an active device (a transistor or vacuum tube) with no input signal applied. A bias circuit is a portion of the device's circuit which supplies this steady current or voltage. Overview In electronics, 'biasing' usually refers to a fixed DC voltage or current applied to a terminal of an electronic component such as a diode, transistor or vacuum tube in a circuit ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrical Parameters
Electricity is the set of physical phenomena associated with the presence and motion of matter that has a property of electric charge. Electricity is related to magnetism, both being part of the phenomenon of electromagnetism, as described by Maxwell's equations. Various common phenomena are related to electricity, including lightning, static electricity, electric heating, electric discharges and many others. The presence of an electric charge, which can be either positive or negative, produces an electric field. The movement of electric charges is an electric current and produces a magnetic field. When a charge is placed in a location with a non-zero electric field, a force will act on it. The magnitude of this force is given by Coulomb's law. If the charge moves, the electric field would be doing work on the electric charge. Thus we can speak of electric potential at a certain point in space, which is equal to the work done by an external agent in carrying a unit of positiv ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductors
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
.jpg "Click for more on -> Transistors"){kind=spacer}
