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Overdrive Voltage
Overdrive voltage, usually abbreviated as VOV, is typically referred to in the context of MOSFET transistors. The overdrive voltage is defined as the voltage between transistor gate and source (VGS) in excess of the threshold voltage (VTH) where VTH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity). Due to this definition, overdrive voltage is also known as "excess gate voltage" or "effective voltage." Overdrive voltage can be found using the simple equation: VOV = VGS − VTH. Technology VOV is important as it directly affects the output drain terminal current (ID) of the transistor, an important property of amplifier circuits. By increasing VOV, ID can be increased until Saturation current, saturation is reached. Overdrive voltage is also important because of its relationship to VDS, the drain voltage relative to the source, which can be used to determine the region of operation of the MOSFET. The ...
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MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in watt.html" ;"title="amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured ...
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