Liquid Phase Epitaxy
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Liquid Phase Epitaxy
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ...
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Crystal
A crystal or crystalline solid is a solid material whose constituents (such as atoms, molecules, or ions) are arranged in a highly ordered microscopic structure, forming a crystal lattice that extends in all directions. In addition, macroscopic single crystals are usually identifiable by their geometrical shape, consisting of flat faces with specific, characteristic orientations. The scientific study of crystals and crystal formation is known as crystallography. The process of crystal formation via mechanisms of crystal growth is called crystallization or solidification. The word ''crystal'' derives from the Ancient Greek word (), meaning both "ice" and "rock crystal", from (), "icy cold, frost". Examples of large crystals include snowflakes, diamonds, and table salt. Most inorganic solids are not crystals but polycrystals, i.e. many microscopic crystals fused together into a single solid. Polycrystals include most metals, rocks, ceramics, and ice. A third category of ...
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Compound Semiconductor
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows op ...
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Dichlorosilane
Dichlorosilane, or DCS as it is commonly known, is a chemical compound with the formula H2SiCl2. In its major use, it is mixed with ammonia (NH3) in LPCVD chambers to grow silicon nitride in semiconductor processing. A higher concentration of DCS·NH3 (i.e. 16:1), usually results in lower stress nitride films. History Dichlorosilane was originally prepared in 1919 by the gas-phase reaction of monosilane, SiH4, with hydrogen chloride, HCl, and then reported by Stock and Somieski. It was found that in the gas phase, dichlorosilane will react with water vapor to give a gaseous monomeric prosiloxane, H2SiO. Prosiloxane polymerizes rapidly in the liquid phase and slowly in the gas phase, which results in liquid and solid polysiloxanes 2SiOsub>n. The liquid portion of the product, which is collected via vacuum distillation, becomes viscous and gelled at room temperature. Hydrolysis was done on a solution of H2SiCl2 in benzene by brief contact with water, and the molecular weight was ...
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Silane
Silane is an inorganic compound with chemical formula, . It is a colourless, pyrophoric, toxic gas with a sharp, repulsive smell, somewhat similar to that of acetic acid. Silane is of practical interest as a precursor to elemental silicon. Silane with alkyl groups are effective water repellents for mineral surfaces such as concrete and masonry. Silanes with both organic and inorganic attachments are used as coupling agents. Production Commercial-scale routes Silane can be produced by several routes. Typically, it arises from the reaction of hydrogen chloride with magnesium silicide: : Mg2Si + 4 HCl -> 2 MgCl2 + SiH4 It is also prepared from metallurgical-grade silicon in a two-step process. First, silicon is treated with hydrogen chloride at about 300 °C to produce trichlorosilane, HSiCl3, along with hydrogen gas, according to the chemical equation : Si + 3 HCl -> HSiCl3 + H2 The trichlorosilane is then converted to a mixture of silane and silicon tetrachloride: : 4 HS ...
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Hydrogen Chloride
The compound hydrogen chloride has the chemical formula and as such is a hydrogen halide. At room temperature, it is a colourless gas, which forms white fumes of hydrochloric acid upon contact with atmospheric water vapor. Hydrogen chloride gas and hydrochloric acid are important in technology and industry. Hydrochloric acid, the aqueous solution of hydrogen chloride, is also commonly given the formula HCl. Reactions Hydrogen chloride is a diatomic molecule, consisting of a hydrogen atom H and a chlorine atom Cl connected by a polar covalent bond. The chlorine atom is much more electronegative than the hydrogen atom, which makes this bond polar. Consequently, the molecule has a large dipole moment with a negative partial charge (δ−) at the chlorine atom and a positive partial charge (δ+) at the hydrogen atom. In part because of its high polarity, HCl is very soluble in water (and in other polar solvents). Upon contact, and HCl combine to form hydronium cations and ...
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Etching (microfabrication)
Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography. Other situations require a more durable mask, such as silicon nitride. Orientation-Dependent Etching * KOH pellets dissolved in water (self-heating) * Etch Rate > >> ** KOH has a slower etching orientation for the planes ** You cannot use this KOH photoresist as a etching mask, because the oxide attacks too slowly, so this resist will not survive * Photoresist can be used a etching mask, and the best photoresist for etching is nitride * For example, the etch rate of Si in KOH Depends on Crystallographic Plane * At low temperatur ...
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Hydrogen
Hydrogen is the chemical element with the symbol H and atomic number 1. Hydrogen is the lightest element. At standard conditions hydrogen is a gas of diatomic molecules having the formula . It is colorless, odorless, tasteless, non-toxic, and highly combustible. Hydrogen is the most abundant chemical substance in the universe, constituting roughly 75% of all normal matter.However, most of the universe's mass is not in the form of baryons or chemical elements. See dark matter and dark energy. Stars such as the Sun are mainly composed of hydrogen in the plasma state. Most of the hydrogen on Earth exists in molecular forms such as water and organic compounds. For the most common isotope of hydrogen (symbol 1H) each atom has one proton, one electron, and no neutrons. In the early universe, the formation of protons, the nuclei of hydrogen, occurred during the first second after the Big Bang. The emergence of neutral hydrogen atoms throughout the universe occurred about 370,000 ...
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Silicon Tetrachloride
Silicon tetrachloride or tetrachlorosilane is the inorganic compound with the formula SiCl4. It is a colourless volatile liquid that fumes in air. It is used to produce high purity silicon and silica for commercial applications. Preparation Silicon tetrachloride is prepared by the chlorination of various silicon compounds such as ferrosilicon, silicon carbide, or mixtures of silicon dioxide and carbon. The ferrosilicon route is most common. In the laboratory, can be prepared by treating silicon with chlorine at : : It was first prepared by Jöns Jakob Berzelius in 1823. Brine can be contaminated with silica when the production of chlorine is a byproduct of a metal refining process from metal chloride ore. In rare occurrences, the silicon dioxide in silica is converted to silicon tetrachloride when the contaminated brine is electrolyzed. Reactions Hydrolysis and related reactions Like other chlorosilanes, silicon tetrachloride reacts readily with water: :SiCl4 + 2 H2O → SiO ...
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Physical Vapor Deposition
Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation. PVD is used in the manufacturing of items which require thin films for optical, mechanical, electrical, acoustic or chemical functions. Examples include semiconductor devices such as thin-film solar cells, microelectromechanical devices such as thin film bulk acoustic resonator, aluminized PET film for food packaging and balloons, and titanium nitride coated cutting tools for metalworking. Besides PVD tools for fabrication, special smaller tools used mainly for scientific purposes have been developed. The source material i ...
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Chemical Vapor Deposition
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber. Microfabrication processes widely use CVD to deposit materials in various forms, including: monocrystalline, polycrystalline, amorphous, and epitaxial. These materials include: silicon ( dioxide, carbide, nitride, oxynitride), carbon (fiber, nanofibers, nanotubes, diamond and graphene), fluorocarbons, filaments, tungsten, titanium nitride and various high-κ dielectrics. The term ''chemical vapour deposition'' was coined 1960 by ''John M. Blocher, Jr.'' who intended to differentiate ''chemic ...
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CBE Im1
The Most Excellent Order of the British Empire is a British order of chivalry, rewarding contributions to the arts and sciences, work with charitable and welfare organisations, and public service outside the civil service. It was established on 4 June 1917 by King George V and comprises five classes across both civil and military divisions, the most senior two of which make the recipient either a knight if male or dame if female. There is also the related British Empire Medal, whose recipients are affiliated with, but not members of, the order. Recommendations for appointments to the Order of the British Empire were originally made on the nomination of the United Kingdom, the self-governing Dominions of the Empire (later Commonwealth) and the Viceroy of India. Nominations continue today from Commonwealth countries that participate in recommending British honours. Most Commonwealth countries ceased recommendations for appointments to the Order of the British Empire when they ...
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Stranski–Krastanov Growth
Stranski–Krastanov growth (SK growth, also Stransky–Krastanov or Stranski–Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as 'layer-plus-island growth', the SK mode follows a two step process: initially, complete films of adsorbates, up to several monolayers thick, grow in a layer-by-layer fashion on a crystal substrate. Beyond a critical layer thickness, which depends on strain and the chemical potential of the deposited film, growth continues through the nucleation and coalescence of adsorbate 'islands'. This growth mechanism was first noted by Ivan Stranski and Lyubomir Krastanov in 1938. It wasn't until 1958 however, in a seminal work by Ernst Bauer published in ''Zeitschrift für Kristallographie'', that the SK, Volmer–Weber, and Frank–van der Merwe mechanisms were systematically classified as the primary thin-film growth processes. Since then, SK growth has been the subject of intense ...
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