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Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski process, Czoch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hydrochloric Acid
Hydrochloric acid, also known as muriatic acid, is an aqueous solution of hydrogen chloride. It is a colorless solution with a distinctive pungent smell. It is classified as a strong acid Acid strength is the tendency of an acid, symbolised by the chemical formula HA, to dissociate into a proton, H+, and an anion, A-. The dissociation of a strong acid in solution is effectively complete, except in its most concentrated solutions .... It is a component of the gastric acid in the digestive systems of most animal species, including humans. Hydrochloric acid is an important laboratory reagent and industrial chemical. History In the early tenth century, the Persian physician and alchemist Abu Bakr al-Razi ( 865–925, Latin: Rhazes) conducted experiments with sal ammoniac (ammonium chloride) and vitriol (hydrated sulfates of various metals), which he distilled together, thus producing the gas hydrogen chloride. In doing so, al-Razi may have stumbled upon a primitive method ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Light-emitting Diode
A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device. Appearing as practical electronic components in 1962, the earliest LEDs emitted low-intensity infrared (IR) light. Infrared LEDs are used in remote-control circuits, such as those used with a wide variety of consumer electronics. The first visible-light LEDs were of low intensity and limited to red. Early LEDs were often used as indicator lamps, replacing small incandescent bulbs, and in seven-segment displays. Later developments produced LEDs available in visible, ultraviolet (UV) ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Arsine
Arsine (IUPAC name: arsane) is an inorganic compound with the formula As H3. This flammable, pyrophoric, and highly toxic pnictogen hydride gas is one of the simplest compounds of arsenic. Despite its lethality, it finds some applications in the semiconductor industry and for the synthesis of organoarsenic compounds. The term ''arsine'' is commonly used to describe a class of organoarsenic compounds of the formula AsH3−xRx, where R = aryl or alkyl. For example, As(C6H5)3, called triphenylarsine, is referred to as "an arsine". General properties At its standard state, arsine is a colorless, denser-than-air gas that is slightly soluble in water (20% at 20 °C) and in many organic solvents as well. Whereas arsine itself is odorless, owing to its oxidation by air, it is possible to smell a slight garlic or fish-like scent when the compound is present above 0.5 ppm. This compound is kinetically stable: at room temperature it decomposes only slowly. At temperatures of ca. 230&n ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Trimethylgallium
Trimethylgallium, often abbreviated to TMG or TMGa, is the organogallium compound with the formula Ga(CH3)3. It is a colorless, pyrophoric liquid. Unlike trimethylaluminium, TMG adopts a monomeric structure. When examined in detail, the monomeric units are clearly linked by multiple weak Ga---C interactions, reminiscent of the situation for trimethylindium. Preparation Two forms of TMG are typically investigated: Lewis base adducts or TMG itself. All are prepared by reactions of gallium trichloride with various methylating agents. When the methylation is conducted with methylmagnesium iodide in diethyl ether, the product is the poorly volatile diethyl ether adduct is produced. The ether ligand is not readily lost, although it may be displaced with liquid ammonia. When the alkylation is conducted with methyl lithium in the presence of a tertiary phosphine the air-stable phosphine adduct is obtained: : Heating the solid phosphine adduct under vacuum liberates the base-free TMG: ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOCVD
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation (later Rockwell International) Science Center by Harold M. Manasevit. Basic principles In MOCVD ultrapure precursor gases are injected into a reactor, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Arsenic Trichloride
Arsenic trichloride is an inorganic compound with the formula AsCl3, also known as arsenous chloride or butter of arsenic. This poisonous oil is colourless, although impure samples may appear yellow. It is an intermediate in the manufacture of organoarsenic compounds.Sabina C. Grund, Kunibert Hanusch, Hans Uwe Wolf "Arsenic and Arsenic Compounds" in ''Ullmann's Encyclopedia of Industrial Chemistry'', VCH-Wiley, 2008, Weinheim. Structure AsCl3 is a pyramidal molecule with C3v symmetry. The As-Cl bond is 2.161 Å and the angle Cl-As-Cl is 98° 25'±30. AsCl3 has four normal modes of vibration: ν1(A1) 416, ν2(A1) 192, ν3 393, and ν4(E) 152 cm−1. Synthesis This colourless liquid is prepared by treatment of arsenic(III) oxide with hydrogen chloride followed by distillation: : As2O3 + 6 HCl → 2 AsCl3 + 3 H2O It can also be prepared by chlorination of arsenic at 80–85 °C, but this method requires elemental arsenic. : 2 As + 3 Cl2 → 2 AsCl3 Arsenic tr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Chemical Vapor Deposition
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber. Microfabrication processes widely use CVD to deposit materials in various forms, including: monocrystalline, polycrystalline, amorphous, and epitaxial. These materials include: silicon ( dioxide, carbide, nitride, oxynitride), carbon (fiber, nanofibers, nanotubes, diamond and graphene), fluorocarbons, filaments, tungsten, titanium nitride and various high-κ dielectrics. The term ''chemical vapour deposition'' was coined 1960 by ''John M. Blocher, Jr.'' who intended to differentiate ''chemic ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Single Crystal
In materials science, a single crystal (or single-crystal solid or monocrystalline solid) is a material in which the crystal lattice of the entire sample is continuous and unbroken to the edges of the sample, with no grain boundaries.RIWD. "Reade Advanced Materials – Single Crystals". ''www.reade.com''. Retrieved 2021-02-28. The absence of the defects associated with grain boundaries can give monocrystals unique properties, particularly mechanical, optical and electrical, which can also be anisotropic, depending on the type of crystallographic structure. These properties, in addition to making some gems precious, are industrially used in technological applications, especially in optics and electronics. Because entropic effects favor the presence of some imperfections in the microstructure of solids, such as impurities, inhomogeneous strain and crystallographic defects such as dislocations, perfect single crystals of meaningful size are exceedingly rare in nature. The necess ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Oxidation State
In chemistry, the oxidation state, or oxidation number, is the hypothetical charge of an atom if all of its bonds to different atoms were fully ionic. It describes the degree of oxidation (loss of electrons) of an atom in a chemical compound. Conceptually, the oxidation state may be positive, negative or zero. While fully ionic bonds are not found in nature, many bonds exhibit strong ionicity, making oxidation state a useful predictor of charge. The oxidation state of an atom does not represent the "real" formal charge on that atom, or any other actual atomic property. This is particularly true of high oxidation states, where the ionization energy required to produce a multiply positive ion is far greater than the energies available in chemical reactions. Additionally, the oxidation states of atoms in a given compound may vary depending on the choice of electronegativity scale used in their calculation. Thus, the oxidation state of an atom in a compound is purely a formalism. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminum Gallium Arsenide
Aluminium gallium arsenide (also gallium aluminium arsenide) ( Alx Ga1−x As) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The ''x'' in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs. The chemical formula ''AlGaAs'' should be considered an abbreviated form of the above, rather than any particular ratio. The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct. The is related with the bandgap via the and varies between 2 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
