Flash Over-provisioning
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Flash Over-provisioning
Write amplification (WA) is an undesirable phenomenon associated with flash memory and solid-state drives (SSDs) where the actual amount of information physically written to the storage media is a multiple of the logical amount intended to be written. Because flash memory must be erased before it can be rewritten, with much coarser granularity of the erase operation when compared to the write operation, the process to perform these operations results in moving (or rewriting) user data and metadata more than once. Thus, rewriting some data requires an already-used-portion of flash to be read, updated, and written to a new location, together with initially erasing the new location if it was previously used at some point in time. Due to the way flash works, much larger portions of flash must be erased and rewritten than actually required by the amount of new data. This multiplying effect increases the number of writes required over the life of the SSD, which shortens the time i ...
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Write Amplification On SSD
Writing is a medium of human communication which involves the representation of a language through a system of physically Epigraphy, inscribed, Printing press, mechanically transferred, or Word processor, digitally represented Symbols (semiotics), symbols. Writing systems do not themselves constitute human languages (with the debatable exception of computer languages); they are a means of rendering language into a form that can be reconstructed by other humans separated by time and/or space. While not all languages use a writing system, those that do can complement and extend capacities of spoken language by creating durable forms of language that can be transmitted across space (e.g. Letter (message), written correspondence) and stored over time (e.g. libraries or other public records). It has also been observed that the activity of writing itself can have knowledge-transforming effects, since it allows humans to externalize their thinking in forms that are easier to reflect ...
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Flash Translation Layer
A flash memory controller (or flash controller) manages data stored on flash memory (usually NAND flash) and communicates with a computer or electronic device. Flash memory controllers can be designed for operating in low duty-cycle environments like memory cards, or other similar media for use in PDAs, mobile phones, etc. USB flash drives use flash memory controllers designed to communicate with personal computers through the USB port at a low duty-cycle. Flash controllers can also be designed for higher duty-cycle environments like solid-state drives (SSD) used as data storage for laptop computer systems up to mission-critical enterprise storage arrays. Initial setup After a flash storage device is initially manufactured, the flash controller is first used to format the flash memory. This ensures the device is operating properly, it maps out bad flash memory cells, and it allocates spare cells to be substituted for future failed cells. Some part of the spare cells is also u ...
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Read Disturb
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. Flash memory, a type of floating-gate memory, was invented at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memory allows a single machine word to be written to an erased ...
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Garbage Collection (computer Science)
In computer science, garbage collection (GC) is a form of automatic memory management. The ''garbage collector'' attempts to reclaim memory which was allocated by the program, but is no longer referenced; such memory is called '' garbage''. Garbage collection was invented by American computer scientist John McCarthy around 1959 to simplify manual memory management in Lisp. Garbage collection relieves the programmer from doing manual memory management, where the programmer specifies what objects to de-allocate and return to the memory system and when to do so. Other, similar techniques include stack allocation, region inference, and memory ownership, and combinations thereof. Garbage collection may take a significant proportion of a program's total processing time, and affect performance as a result. Resources other than memory, such as network sockets, database handles, windows, file descriptors, and device descriptors, are not typically handled by garbage collection, but ...
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Garbage Collection
Waste collection is a part of the process of waste management. It is the transfer of solid waste from the point of use and disposal to the point of treatment or landfill. Waste collection also includes the curbside collection of recyclable materials that technically are not waste, as part of a municipal landfill diversion program. Household waste Household waste in economically developed countries will generally be left in waste containers or recycling bins prior to collection by a waste collector using a waste collection vehicle. Waste collection barges are used in some towns, for example in Venice, Italy. However, in many developing countries, such as Mexico and Egypt, waste left in bins or bags at the side of the road will not be removed unless residents interact with the waste collectors. Mexico City residents must haul their trash to a waste collection vehicle which makes frequent stops around each neighborhood. The waste collectors will indicate their readiness by rin ...
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Multi-level Cell
In electronics, a multi-level cell (MLC) is a memory cell capable of storing more than a single bit of information, compared to a single-level cell (SLC), which can store only one bit per memory cell. A memory cell typically consists of a single floating-gate MOSFET (metal–oxide–semiconductor field-effect transistor), thus multi-level cells reduce the number of MOSFETs required to store the same amount of data as single-level cells. Triple-level cells (TLC) and quad-level cells (QLC) are versions of MLC memory, which can store three and four bits per cell respectively. The name "''multi''-level cell" is sometimes used specifically to refer to the "''two''-level cell". Overall, the memories are named as follows: # Single-level cell or SLC (1 bit per cell) # Multi-level cell or MLC (2 bits per cell), alternatively double-level cell or DLC # Triple-level cell or TLC (3 bits per cell) or 3-Bit MLC # Quad-level cell or QLC (4 bits per cell) # Penta-level cell or PLC (5 bits per ce ...
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Data Deduplication
In computing, data deduplication is a technique for eliminating duplicate copies of repeating data. Successful implementation of the technique can improve storage utilization, which may in turn lower capital expenditure by reducing the overall amount of storage media required to meet storage capacity needs. It can also be applied to network data transfers to reduce the number of bytes that must be sent. The deduplication process requires comparison of data 'chunks' (also known as 'byte patterns') which are unique, contiguous blocks of data. These chunks are identified and stored during a process of analysis, and compared to other chunks within existing data. Whenever a match occurs, the redundant chunk is replaced with a small reference that points to the stored chunk. Given that the same byte pattern may occur dozens, hundreds, or even thousands of times (the match frequency is dependent on the chunk size), the amount of data that must be stored or transferred can be greatly reduc ...
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Trim (computing)
A trim command (known as TRIM in the ATA command set, and UNMAP in the SCSI command set) allows an operating system to inform a solid-state drive (SSD) which blocks of data are no longer considered to be 'in use' and therefore can be erased internally. Trim was introduced soon after SSDs were introduced. Because low-level operation of SSDs differs significantly from hard drives, the typical way in which operating systems handle operations like deletes and formats resulted in unanticipated progressive performance degradation of write operations on SSDs. Trimming enables the SSD to more efficiently handle garbage collection, which would otherwise slow future write operations to the involved blocks.Shimpi, Anand Lal. (18 March 2009). p. 10. TRIM is an ATA command (Advanced Technology Attachment Command) that allows an OS to inform SSD about the blocks of data no longer in use. The SSD then deletes such blocks of data to make a way for newer blocks of data. TRIM is basically used ...
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Write Amplification
Write amplification (WA) is an undesirable phenomenon associated with flash memory and solid-state drives (SSDs) where the actual amount of information physically written to the storage media is a multiple of the logical amount intended to be written. Because flash memory must be erased before it can be rewritten, with much coarser granularity of the erase operation when compared to the write operation, the process to perform these operations results in moving (or rewriting) user data and metadata more than once. Thus, rewriting some data requires an already-used-portion of flash to be read, updated, and written to a new location, together with initially erasing the new location if it was previously used at some point in time. Due to the way flash works, much larger portions of flash must be erased and rewritten than actually required by the amount of new data. This multiplying effect increases the number of writes required over the life of the SSD, which shortens the time it ...
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Steady State
In systems theory, a system or a Process theory, process is in a steady state if the variables (called state variables) which define the behavior of the system or the process are unchanging in time. In continuous time, this means that for those properties ''p'' of the system, the partial derivative with respect to time is zero and remains so: : \frac = 0 \quad \text t. In discrete time, it means that the first difference of each property is zero and remains so: :p_t-p_=0 \quad \text t. The concept of a steady state has relevance in many fields, in particular thermodynamics, Steady state economy, economics, and engineering. If a system is in a steady state, then the recently observed behavior of the system will continue into the future. In stochastic systems, the probabilities that various states will be repeated will remain constant. See for example Linear difference equation#Conversion to homogeneous form for the derivation of the steady state. In many systems, a steady state i ...
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Program-erase Cycle
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. Flash memory, a type of floating-gate memory, was invented at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memory allows a single machine word to be written to an era ...
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Triple-level Cell
In electronics, a multi-level cell (MLC) is a memory cell capable of storing more than a single bit of information, compared to a single-level cell (SLC), which can store only one bit per memory cell. A memory cell typically consists of a single floating-gate MOSFET (metal–oxide–semiconductor field-effect transistor), thus multi-level cells reduce the number of MOSFETs required to store the same amount of data as single-level cells. Triple-level cells (TLC) and quad-level cells (QLC) are versions of MLC memory, which can store three and four bits per cell respectively. The name "''multi''-level cell" is sometimes used specifically to refer to the "''two''-level cell". Overall, the memories are named as follows: # Single-level cell or SLC (1 bit per cell) # Multi-level cell or MLC (2 bits per cell), alternatively double-level cell or DLC # Triple-level cell or TLC (3 bits per cell) or 3-Bit MLC # Quad-level cell or QLC (4 bits per cell) # Penta-level cell or PLC (5 bits per ce ...
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