Enhancement Mode
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Enhancement Mode
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage. In most circuits, this means pulling an enhancement-mode MOSFET's gate voltage towards its drain voltage turns it on. In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example). For N-type depletion-load devices, the threshold voltage might be about −3 V, so it could be turned off by pulling the gate 3&nb ...
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FET Comparison
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 1925 an ...
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Mohamed M
Muhammad was an Islamic prophet and a religious and political leader who preached and established Islam. Muhammad and variations may also refer to: *Muhammad (name), a given name and surname, and list of people with the name and its variations Persons with the name Muhammad and no other name *Muhammad (Bavandid ruler), 13th-century Iranian monarch *Muhammad V of Kelantan (born 1969), 15th Yang di-Pertuan Agong and Sultan of Kelantan *Mohammed VI of Morocco (born 1963), King of Morocco * Muhammed VII, Sultan of Granada (1370–1408) *Muhammad VII of Bornu of the Sayfawa dynasty (1731–1747) * Muhammed VIII, Sultan of Granada (1411–1431) * Mohammed VIII of Bornu of the Sayfawa dynasty (1811–1814) Places * Mohammad-e Olya, a village in Fars Province, Iran *Mohammad, Gachsaran, a village in Kohgiluyeh and Boyer-Ahmad Province, Iran *Mohammad, Kohgiluyeh, a village in Kohgiluyeh and Boyer-Ahmad Province, Iran *Mohammad, Sistan and Baluchestan, a village in Sistan and Baluchest ...
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Springer Science & Business Media
Springer Science+Business Media, commonly known as Springer, is a German multinational publishing company of books, e-books and peer-reviewed journals in science, humanities, technical and medical (STM) publishing. Originally founded in 1842 in Berlin, it expanded internationally in the 1960s, and through mergers in the 1990s and a sale to venture capitalists it fused with Wolters Kluwer and eventually became part of Springer Nature in 2015. Springer has major offices in Berlin, Heidelberg, Dordrecht, and New York City. History Julius Springer founded Springer-Verlag in Berlin in 1842 and his son Ferdinand Springer grew it from a small firm of 4 employees into Germany's then second largest academic publisher with 65 staff in 1872.Chronology
". Springer Science+Business Media.
In 1964, Springer expanded its business internationa ...
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Thin-film Transistors
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is thin relative to the plane of the device. TFTs are grown on a supporting (but non-conducting) substrate. A common substrate is glass, because the traditional application of TFTs is in liquid-crystal displays (LCDs). This differs from the conventional bulk metal oxide field effect transistor (MOSFET), where the semiconductor material typically ''is'' the substrate, such as a silicon wafer. Design and Manufacture TFTs can be fabricated with a wide variety of semiconductor materials. Because it is naturally abundant and well understood, amorphous or polycrystalline silicon was historically used as the semiconductor layer. However, because of the low mobility of amorphous silicon and the large device-to-device variations found in polycrystalline silicon, other materials have been studied for use in TFTs. These include cadmium selenide, metal oxides such as indium gallium zinc o ...
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Indium Arsenide
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K ...
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Westinghouse Electric
The Westinghouse Electric Corporation was an American manufacturing company founded in 1886 by George Westinghouse. It was originally named "Westinghouse Electric & Manufacturing Company" and was renamed "Westinghouse Electric Corporation" in 1945. The company acquired the CBS television network in 1995 and was renamed "CBS Corporation" until being acquired by Viacom in 1999, a merger completed in April 2000. The CBS Corporation name was later reused for one of the two companies resulting from the split of Viacom in 2006. The Westinghouse trademarks are owned by Westinghouse Electric Corporation, and were previously part of Westinghouse Licensing Corporation. The nuclear power business, Westinghouse Electric Company, was spun off from the Westinghouse Electric Corporation in 1999. History Westinghouse Electric was founded by George Westinghouse in Pittsburgh, Pennsylvania, on January 8, 1886. The firm became active in developing electric infrastructure throughout the U ...
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RCA Laboratories
The RCA Corporation was a major American electronics company, which was founded as the Radio Corporation of America in 1919. It was initially a patent trust owned by General Electric (GE), Westinghouse, AT&T Corporation and United Fruit Company. In 1932, RCA became an independent company after the partners were required to divest their ownership as part of the settlement of a government antitrust suit. An innovative and progressive company, RCA was the dominant electronics and communications firm in the United States for over five decades. RCA was at the forefront of the mushrooming radio industry in the early 1920s, as a major manufacturer of radio receivers, and the exclusive manufacturer of the first superheterodyne sets. RCA also created the first nationwide American radio network, the National Broadcasting Company (NBC). The company was also a pioneer in the introduction and development of television, both black and white and especially color television. During this peri ...
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Proceedings Of The IEEE
The ''Proceedings of the IEEE'' is a monthly peer-reviewed scientific journal published by the Institute of Electrical and Electronics Engineers (IEEE). The journal focuses on electrical engineering and computer science. According to the ''Journal Citation Reports'', the journal has a 2017 impact factor of 9.107, ranking it sixth in the category "Engineering, Electrical & Electronic." In 2018, it became fifth with an enhanced impact factor of 10.694. History of the Proceedings The journal was established in 1909, known as the ''Proceedings of the Wireless Institute''. Six issues were published under this banner by Greenleaf Pickard and Alfred Goldsmith. Then in 1911, a merger between the Wireless Institute (New York) and the Society of Wireless Telegraph Engineers (Boston) resulted in a society named the Institute of Radio Engineers (IRE). In January 1913 newly formed IRE published the first issue of the ''Proceedings of the IRE''. Later, a 1000-page special issue commemorated ...
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Semiconductor Device
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas. Semiconductor devices are manufactured both as single discrete devices and as integrated circuit (IC) chips, which consist of two or more devices—which can number from the hundreds to the billions—manufactured and interconnected on a single semiconductor wafer (also called a substrate). Semiconductor materials are useful because their behavior can be easily manipulated by the deliberate addition of impurities, known as doping. Semi ...
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Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ...
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Bell Labs
Nokia Bell Labs, originally named Bell Telephone Laboratories (1925–1984), then AT&T Bell Laboratories (1984–1996) and Bell Labs Innovations (1996–2007), is an American industrial research and scientific development company owned by multinational company Nokia. With headquarters located in Murray Hill, New Jersey, the company operates several laboratories in the United States and around the world. Researchers working at Bell Laboratories are credited with the development of radio astronomy, the transistor, the laser, the photovoltaic cell, the charge-coupled device (CCD), information theory, the Unix operating system, and the programming languages B, C, C++, S, SNOBOL, AWK, AMPL, and others. Nine Nobel Prizes have been awarded for work completed at Bell Laboratories. Bell Labs had its origin in the complex corporate organization of the Bell System telephone conglomerate. In the late 19th century, the laboratory began as the Western Electric Engineering Department, l ...
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Dawon Kahng
Dawon Kahng ( ko, 강대원; May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment. Kahng and Atalla later proposed the concept of the MOS integrated circuit, and they did pioneering work on Schottky diodes and nanolayer-base transistors in the early 1960s. Kahng then invented the floating-gate MOSFET (FGMOS) with Simon Min Sze in 1967. Kahng and Sze proposed that FGMOS could be used as floating-gate memory cells for non-volatile memory (NVM) and reprogrammable read-only memory (ROM), which became the basis for EPROM ( ...
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