Charge Trap Flash
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Charge Trap Flash
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical of a floating-gate structure. This approach allows memory manufacturers to reduce manufacturing costs five ways: # Fewer process steps are required to form a charge storage node # Smaller process geometries can be used (therefore reducing chip size and cost) # Multiple bits can be stored on a single flash memory cell # Improved reliability # Higher yield since the charge trap is less susceptible to point defects in the tunnel oxide layer While the charge-trapping concept was around earlier, it wasn't until 2002 that AMD and Fujitsu produced high-volume charge-trapping flash memory. They began the commercial production of charge-trapping flash ...
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Semiconductor Memory
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per cell. Most types of semiconductor memory have the property of random access, which means that it takes the same amount of time to access any memory location, so data can be efficiently accessed in any random order. This contrasts with data storage media such as hard disks and CDs which ...
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Computer History Museum
The Computer History Museum (CHM) is a museum of computer history, located in Mountain View, California. The museum presents stories and artifacts of Silicon Valley and the information age, and explores the computing revolution and its impact on society. History The museum's origins date to 1968 when Gordon Bell began a quest for a historical collection and, at that same time, others were looking to preserve the Whirlwind computer. The resulting ''Museum Project'' had its first exhibit in 1975, located in a converted coat closet in a DEC lobby. In 1978, the museum, now ''The Digital Computer Museum'' (TDCM), moved to a larger DEC lobby in Marlborough, Massachusetts. Maurice Wilkes presented the first lecture at TDCM in 1979 – the presentation of such lectures has continued to the present time. TDCM incorporated as '' The Computer Museum'' (TCM) in 1982. In 1984, TCM moved to Boston, locating on Museum Wharf. In 1996/1997, the TCM History Center (TCMHC) was established; a ...
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Springer Science & Business Media
Springer Science+Business Media, commonly known as Springer, is a German multinational publishing company of books, e-books and peer-reviewed journals in science, humanities, technical and medical (STM) publishing. Originally founded in 1842 in Berlin, it expanded internationally in the 1960s, and through mergers in the 1990s and a sale to venture capitalists it fused with Wolters Kluwer and eventually became part of Springer Nature in 2015. Springer has major offices in Berlin, Heidelberg, Dordrecht, and New York City. History Julius Springer founded Springer-Verlag in Berlin in 1842 and his son Ferdinand Springer grew it from a small firm of 4 employees into Germany's then second largest academic publisher with 65 staff in 1872.Chronology
". Springer Science+Business Media.
In 1964, Springer expanded its business internationa ...
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Nitride
In chemistry, a nitride is an inorganic compound of nitrogen. The "nitride" anion, N3- ion, is very elusive but compounds of nitride are numerous, although rarely naturally occuring. Some nitrides have a find applications, such as wear-resistant coatings (e.g., titanium nitride, TiN), hard ceramic materials (e.g., silicon nitride, Si3N4), and semiconductors (e.g., gallium nitride, GaN). The development of GaN-based light emitting diodes was recognized by the 2014 Nobel Prize in Physics. Metal nitrido complexes are also common. Synthesis of inorganic metal nitrides is challenging because nitrogen gas (N2) is not very reactive at low temperatures, but it becomes more reactive at higher temperatures. Therefore, a balance must be achieved between the low reactivity of nitrogen gas at low temperatures and the entropy driven formation of N2 at high temperatures. However, synthetic methods for nitrides are growing more sophisticated and the materials are of increasing technological re ...
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Oxide
An oxide () is a chemical compound that contains at least one oxygen atom and one other element in its chemical formula. "Oxide" itself is the dianion of oxygen, an O2– (molecular) ion. with oxygen in the oxidation state of −2. Most of the Earth's crust consists of oxides. Even materials considered pure elements often develop an oxide coating. For example, aluminium foil develops a thin skin of Al2O3 (called a passivation layer) that protects the foil from further corrosion.Greenwood, N. N.; & Earnshaw, A. (1997). Chemistry of the Elements (2nd Edn.), Oxford:Butterworth-Heinemann. . Stoichiometry (the measurable relationship between reactants and chemical equations of a equation or reaction) Oxides are extraordinarily diverse in terms of stoichiometries and in terms of the structures of each stoichiometry. Most elements form oxides of more than one stoichiometry. A well known example is carbon monoxide and carbon dioxide.Greenwood, N. N.; & Earnshaw, A. (1997). Chemistry ...
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Metal–nitride–oxide–semiconductor Transistor
The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) in which the oxide layer is replaced by a double layer of nitride and oxide. It is an alternative and supplement to the existing standard MOS technology, wherein the insulation employed is a nitride-oxide layer. It is used in non-volatile computer memory. History The original MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. Kahng went on to invent the floating-gate MOSFET with Simon Min Sze at Bell Labs, and they proposed its use as a floating-gate (FG) memory cell, in 1967. This was the first form of non-volatile memory based on the injection and storage of charges in a floating-gate MOSFET, which later became the basis for EPROM (erasable PROM), E ...
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Sperry Corporation
Sperry Corporation was a major American equipment and electronics company whose existence spanned more than seven decades of the 20th century. Sperry ceased to exist in 1986 following a prolonged hostile takeover bid engineered by Burroughs Corporation, which merged the combined operation under the new name Unisys. Some of Sperry's former divisions became part of Honeywell, Lockheed Martin, Raytheon Technologies, and Northrop Grumman. The company is best known as the developer of the artificial horizon and a wide variety of other gyroscope-based aviation instruments like autopilots, bombsights, analog ballistics computers and gyro gunsights. In the post-WWII era the company branched out into electronics, both aviation related, and later, computers. History Early history The company was founded in 1910 by Elmer Ambrose Sperry, as the Sperry Gyroscope Company, to manufacture navigation equipment—chiefly his own inventions the marine gyrostabilizer and the gyrocompass—at ...
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The Economist
''The Economist'' is a British weekly newspaper printed in demitab format and published digitally. It focuses on current affairs, international business, politics, technology, and culture. Based in London, the newspaper is owned by The Economist Group, with its core editorial offices in the United States, as well as across major cities in continental Europe, Asia, and the Middle East. In 2019, its average global print circulation was over 909,476; this, combined with its digital presence, runs to over 1.6 million. Across its social media platforms, it reaches an audience of 35 million, as of 2016. The newspaper has a prominent focus on data journalism and interpretive analysis over original reporting, to both criticism and acclaim. Founded in 1843, ''The Economist'' was first circulated by Scottish economist James Wilson to muster support for abolishing the British Corn Laws (1815–1846), a system of import tariffs. Over time, the newspaper's coverage expanded further into ...
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EEPROM
EEPROM (also called E2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed. EEPROMs are organized as arrays of floating-gate transistors. EEPROMs can be programmed and erased in-circuit, by applying special programming signals. Originally, EEPROMs were limited to single-byte operations, which made them slower, but modern EEPROMs allow multi-byte page operations. An EEPROM has a limited life for erasing and reprogramming, now reaching a million operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed, the life of the EEPROM is an important design consideration. Flash memory is a type of EEPROM designed for high speed and high density, at the expense of large erase blocks (ty ...
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Programmable Read-only Memory
A programmable read-only memory (PROM) is a form of digital memory where the contents can be changed once after manufacture of the device. The data is then permanent and cannot be changed. It is one type of read-only memory (ROM). PROMs are used in digital electronic devices to store permanent data, usually low level programs such as firmware or microcode. The key difference from a standard ROM is that the data is written into a ROM during manufacture, while with a PROM the data is programmed into them after manufacture. Thus, ROMs tend to be used only for large production runs with well-verified data. PROMs may be used where the volume required does not make a factory-programmed ROM economical, or during development of a system that may ultimately be converted to ROMs in a mass produced version. PROMs are manufactured blank and, depending on the technology, can be programmed at wafer, final test, or in system. Blank PROM chips are programmed by plugging them into a device call ...
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EPROM
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light source (such as from a mercury-vapor lamp). EPROMs are easily recognizable by the transparent fused quartz (or on later models resin) window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing. Operation Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had broken ...
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The Bell System Technical Journal
The ''Bell Labs Technical Journal'' is the in-house scientific journal for scientists of Nokia Bell Labs, published yearly by the IEEE society. The managing editor is Charles Bahr. The journal was originally established as the ''Bell System Technical Journal'' (BSTJ) in New York by the American Telephone and Telegraph Company (AT&T) in 1922, published under this name until 1983, when the breakup of the Bell System placed various parts of the system into separate companies. The journal was devoted to the scientific fields and engineering disciplines practiced in the Bell System for improvements in the wide field of electrical communication. After the restructuring of Bell Labs in 1984, the journal was renamed to ''AT&T Bell Laboratories Technical Journal''. In 1985, it was published as the ''AT&T Technical Journal'' until 1996, when it was renamed to ''Bell Labs Technical Journal''. History The ''Bell System Technical Journal'' was published by AT&T in New York City through its In ...
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