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Zentrum Mikroelektronik Dresden
Zentrum Mikroelektronik Dresden (ZMD) was regarded as the heart of East Germany's microelectronics research in the 1980s as well as its most advanced integrated circuit manufacturer. Together with TU Dresden and VEB Spurenmetalle Freiberg, ZMD formed the foundation for Silicon Saxony, a cluster of microelectronics companies that came to include new Semiconductor fabrication plant, fabs by Siemens (later Infineon Technologies) and AMD (later GlobalFoundries). 1961: Arbeitsstelle für Molekularelektronik (AME) The company was founded in 1961 in Dresden under the leadership of Werner Hartmann (physicist), Werner Hartmann as a research institute with the goal of developing technologies for manufacturing integrated circuits, following the seminal patents by Jack Kilby and Robert Noyce two years earlier. Initially, it was named ''Arbeitsstelle für Molekularelektronik'' (Department of Molecular Electronics) and reported to the government's Office of Nuclear Research and Technology. In ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Volkseigener Betrieb
The Publicly Owned Enterprise (german: Volkseigener Betrieb; abbreviated VEB) was the main legal form of industrial enterprise in East Germany. They were all publicly owned and were formed after Nationalisation#Germany, mass nationalisation between 1945 and the early 1960s, and the handing back in 1954 of some 33 enterprises previously taken by the Soviet Union as War reparations, reparations. The managing director of a VEB was called a plant or works manager (German: ''Werkleiter'', ''Werkdirektor'' or ''Betriebsdirektor''). He or she was assisted by the first secretary of the factory party organisation (''Betriebsparteiorganisation'') of the Socialist Unity Party of Germany, SED, and the chairman of the factory trade union (''Betriebsgewerkschaftsleitung''). Subordinate to them were roles such as "Chief Accountant" and "Technical Director". VEBs were initially vertical integration, vertically integrated into units called Associations of Publicly Owned Enterprises (''Vereinigung V ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Jack Kilby
Jack St. Clair Kilby (November 8, 1923 – June 20, 2005) was an American electrical engineer who took part (along with Robert Noyce of Fairchild) in the realization of the first integrated circuit while working at Texas Instruments (TI) in 1958. He was awarded the Nobel Prize in Physics on December 10, 2000. Kilby was also the co-inventor of the handheld calculator and the thermal printer, for which he had the patents. He also had patents for seven other inventions. Early life Kilby was born in 1923 in Jefferson City, Missouri to Hubert and Vina Freitag Kilby. Both parents had Bachelor of Science degrees from the University of Illinois. His father was a manager at a local utility company. Kilby grew up and attended school in Great Bend, Kansas, graduating from the Great Bend High School. (Road signs at the entrances to the town commemorate his time there, and the Commons Area at Great Bend High School has been named The Jack Kilby Commons Area.) Kilby received his Bachel ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Photolithography
In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate. The photoresist either breaks down or hardens where it is exposed to light. The patterned film is then created by removing the softer parts of the coating with appropriate solvents. Conventional photoresists typically consists of three components: resin, sensitizer, and solvent. Photolithography processes can be classified according to the type of light used, such as ultraviolet, deep ultraviolet, extreme ultraviolet, or X-ray. The wavelength of light used determines the minimum feature si ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Leipzig Trade Fair
The Leipzig Trade Fair (german: Leipziger Messe) is a major trade fair, which traces its roots back for nearly a millennium. After the Second World War, Leipzig fell within the territory of East Germany, whereupon the Leipzig Trade Fair became one of the most important trade fairs of Comecon and was traditionally a meeting place for businessmen and politicians from both sides of the Iron Curtain. Since 1996, the fair has taken place on the Leipzig fairgrounds, located about north of the city centre. History Early history The history of the Leipzig fairs goes back to the Middle Ages. A fair held at Leipzig is first mentioned in 1165. Otto the Rich, Margrave of Meissen presented the Leipzig fairs under protection. No other fair was allowed within a circle of a mile (7.5 km) away ( Bannmeile). In 1268, Margrave Theodoric of Landsberg secured all merchants travelers to Leipzig full protection for person and goods, even if their sovereign was at feud with him. This led to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Halbleiterwerk Frankfurt (Oder)
VEB Halbleiterwerk Frankfurt (Oder) (abbreviated HFO or HWF) was the largest manufacturer of semiconductor devices in the German Democratic Republic. In 1989, HFO produced 110 million integrated circuits (70% of all integrated circuits produced in the GDR in that year), 9.7 million transistors, and 150 million transistor chips. Despite this, HFO did not rise to prominence like Zentrum Mikroelektronik Dresden (of '' megabit chip'' fame) or VEB Mikroelektronik "Karl Marx" Erfurt (known for its microprocessors). Also unlike Zentrum Mikroelektronik Dresden and VEB Mikroelektronik "Karl Marx" Erfurt, HFO did not survive long after German Reunification. History In January 1958, the production of Germanium diodes started in the building of a former vocational school. Halbleiterwerk Frankfurt (Oder) was officially founded on 1 January 1959. In January 1961 new production facilities for germanium alloy-junction transistors and diodes went into operation in the Markendorf quarter of Fran ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Kombinat Mikroelektronik Erfurt
VEB Kombinat Mikroelektronik Erfurt was an important manufacturer of active electronic components in East Germany. It should not be confused with the more well-known VEB Kombinat Robotron Dresden which used integrated circuits from Kombinat Mikroelektronik in its computers. Their products often carried the trademark RFT, but this was used on most electronic products from East Germany from otherwise unrelated companies. History The Kombinat Mikroelektronik Erfurt was formed in 1978 when the ''VVB Bauelemente und Vakuumtechnik'' was split into ''VEB Kombinat Elektronische Bauelemente Teltow'' for passive electronic components and ''VEB Kombinat Mikroelektronik Erfurt'' for active electronic components. However, the history of many of the individual plants reaches back further, in some cases to before the Second World War. In 1971 the first integrated circuits had been manufactured — the D100C (TTL) by Halbleiterwerk Frankfurt (Oder) and the U101D (PMOS logic) by Funkwerk Er ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
10 µm Process
The 10 μm process is the level of MOSFET semiconductor process technology that was commercially reached around 1971, by leading semiconductor companies such as RCA and Intel. Products featuring 10 μm manufacturing process * RCA's CD4000 series of integrated circuits began with a 20μm process in 1968, before gradually downscaling and eventually reaching 10μm in the next several years. * Intel 1103, an early dynamic random-access memory (DRAM) chip launched in 1970, used an 8μm process. * Intel 4004 CPU launched in 1971 was manufactured using a 10μm process. * Intel 8008 The Intel 8008 ("''eight-thousand-eight''" or "''eighty-oh-eight''") is an early byte-oriented microprocessor designed by Computer Terminal Corporation (CTC), implemented and manufactured by Intel, and introduced in April 1972. It is an 8-bit C ... CPU launched in 1972 was manufactured using this process. References External linksBrief timeline of microprocessor development *10000 197 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
7400 Series
The 7400 series of integrated circuits (ICs) are a popular logic family of transistor–transistor logic (TTL) logic chips. In 1964, Texas Instruments introduced the SN5400 series of logic chips, in a ceramic semiconductor package. A low-cost plastic package SN7400 series was introduced in 1966 which quickly gained over 50% of the logic chip market, and eventually becoming ''de facto'' standardized electronic components. Over the decades, many generations of pin-compatible descendant families evolved to include support for low power CMOS technology, lower supply voltages, and surface mount packages. Overview The 7400 series contains hundreds of devices that provide everything from basic logic gates, flip-flops, and counters, to special purpose bus transceivers and arithmetic logic units (ALU). Specific functions are described in a list of 7400 series integrated circuits. Some TTL logic parts were made with an extended military-specification temperature range. These pa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
NAND Gate
In digital electronics, a NAND gate (NOT-AND) is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate. A LOW (0) output results only if all the inputs to the gate are HIGH (1); if any input is LOW (0), a HIGH (1) output results. A NAND gate is made using transistors and junction diodes. By De Morgan's laws, a two-input NAND gate's logic may be expressed as =+, making a NAND gate equivalent to inverters followed by an OR gate. The NAND gate is significant because any boolean function can be implemented by using a combination of NAND gates. This property is called functional completeness. It shares this property with the NOR gate. Digital systems employing certain logic circuits take advantage of NAND's functional completeness. The function is logically equivalent to One way of expressing A NAND B is \overline, where the symbol signifies AND and the bar signifies the negation of the express ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
P–n Junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electrical current to pass through the junction only in one direction. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant). If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes. p–n junctions are elementary "building blocks" of semiconductor electronic devices such as diodes, transistors, solar cells, light-emitting diodes (LEDs) ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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