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Schottky Barrier
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB (see figure). The value of ΦB depends on the combination of metal and semiconductor. Not all metal–semiconductor junctions form a rectifying Schottky barrier; a metal–semiconductor junction that conducts current in both directions without rectification, perhaps due to its Schottky barrier being too low, is called an ohmic contact. Physics of formation When a metal is put in direct contact with a semiconductor, a so called Schottky barrier can be formed, leading to a rectifying behavior of the electrical contact. This happens both when the semiconductor is n-type and its work function is smaller than the work function of the metal, and when the semic ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Schottky Diode Section
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Notable people named Schottky include: * Ernst Max Schottky, botanist * Walter H. Schottky, physicist * Friedrich Schottky, mathematician Other links: * Schottky diode and Schottky barrier in electronics and physics * Schottky transistor in electronics * Schottky group in mathematics * Schottky defect in condensed matter physics * Schottky anomaly in condensed matter physics * Schottky noise in electronics, described mathematically by Walter H. Schottky, and also known as shot noise Shot noise or Poisson noise is a type of noise which can be modeled by a Poisson process. In electronics shot noise originates from the discrete nature of electric charge. Shot noise also occurs in photon counting in optical devices, where shot ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Schottky Effect
The Schottky effect or field enhanced thermionic emission is a phenomenon in condensed matter physics named after Walter H. Schottky. In electron emission devices, especially electron guns, the thermionic electron emitter will be biased negative relative to its surroundings. This creates an electric field of magnitude ''F'' at the emitter surface. Without the field, the surface barrier seen by an escaping Fermi-level electron has height ''W'' equal to the local work-function. The electric field lowers the surface barrier by an amount Δ''W'', and increases the emission current. It can be modeled by a simple modification of the Richardson equation, by replacing ''W'' by (''W'' − Δ''W''). This gives the equation :J (F,T,W) = A_ T^2 e^ :\Delta W = \sqrt, where ''J'' is the emission current density, ''T'' is the temperature of the metal, ''W'' is the work function of the metal, ''k'' is the Boltzmann constant, ''q''e is the Elementary charge, ''ε''0 is the vacuum permi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Shockley Diode Equation
The ''Shockley diode equation'' or the ''diode law'', named after transistor co-inventor William Shockley of Bell Telephone Laboratories, gives the I–V (current-voltage) characteristic of an idealized diode in either forward or reverse bias (applied voltage): :I=I_\mathrm \left( e^\frac - 1 \right) where :''I'' is the diode current, :''I''S is the reverse bias saturation current (or scale current), :''V''D is the voltage across the diode, :''V''T is the thermal voltage ''kT''/''q'' (Boltzmann constant times temperature divided by electron charge), and :''n'' is the ''ideality factor'', also known as the ''quality factor'' or sometimes ''emission coefficient''. The equation is called the ''Shockley ideal diode equation'' when ''n'', the ideality factor, is set equal to 1. The ideality factor ''n'' typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material and is set equal to 1 for the case of an "ideal" diode ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hans Bethe
Hans Albrecht Bethe (; July 2, 1906 – March 6, 2005) was a German-American theoretical physicist who made major contributions to nuclear physics, astrophysics, quantum electrodynamics, and solid-state physics, and who won the 1967 Nobel Prize in Physics for his work on the theory of stellar nucleosynthesis. For most of his career, Bethe was a professor at Cornell University.Available at www.JamesKeckCollectedWorks.or are the class notes taken by one of his students at Cornell from the graduate courses on Nuclear Physics and on Applications of Quantum Mechanics he taught in the spring of 1947. During World War II, he was head of the Theoretical Division at the secret Los Alamos National Laboratory, Los Alamos laboratory that developed the first atomic bombs. There he played a key role in calculating the critical mass of the weapons and developing the theory behind the implosion method used in both the Trinity test and the "Fat Man" weapon dropped on Nagasaki in August 1945. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thermionic Emission
Thermionic emission is the liberation of electrons from an electrode by virtue of its temperature (releasing of energy supplied by heat). This occurs because the thermal energy given to the charge carrier overcomes the work function of the material. The charge carriers can be electrons or ions, and in older literature are sometimes referred to as thermions. After emission, a charge that is equal in magnitude and opposite in sign to the total charge emitted is initially left behind in the emitting region. But if the emitter is connected to a battery, the charge left behind is neutralized by charge supplied by the battery as the emitted charge carriers move away from the emitter, and finally the emitter will be in the same state as it was before emission. The classical example of thermionic emission is that of electrons from a hot cathode into a vacuum (also known as thermal electron emission or the Edison effect) in a vacuum tube. The hot cathode can be a metal filament, a coated ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electric Current
An electric current is a stream of charged particles, such as electrons or ions, moving through an electrical conductor or space. It is measured as the net rate of flow of electric charge through a surface or into a control volume. The moving particles are called charge carriers, which may be one of several types of particles, depending on the conductor. In electric circuits the charge carriers are often electrons moving through a wire. In semiconductors they can be electrons or holes. In an electrolyte the charge carriers are ions, while in plasma, an ionized gas, they are ions and electrons. The SI unit of electric current is the ampere, or ''amp'', which is the flow of electric charge across a surface at the rate of one coulomb per second. The ampere (symbol: A) is an SI base unit. Electric current is measured using a device called an ammeter. Electric currents create magnetic fields, which are used in motors, generators, inductors, and transformers. In ordinary con ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Depletion Region
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region. The depletion region is so named because it is formed from a conducting region by removal of all free charge carriers, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena. Formation in a p–n junction A depletion region for ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski process, Czoch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fermi Level Pinning
Enrico Fermi (; 29 September 1901 – 28 November 1954) was an Italian (later naturalized American) physicist and the creator of the world's first nuclear reactor, the Chicago Pile-1. He has been called the "architect of the nuclear age" and the "architect of the atomic bomb". He was one of very few physicists to excel in both theoretical physics and experimental physics. Fermi was awarded the 1938 Nobel Prize in Physics for his work on induced radioactivity by neutron bombardment and for the discovery of transuranium elements. With his colleagues, Fermi filed several patents related to the use of nuclear power, all of which were taken over by the US government. He made significant contributions to the development of statistical mechanics, quantum theory, and nuclear and particle physics. Fermi's first major contribution involved the field of statistical mechanics. After Wolfgang Pauli formulated his exclusion principle in 1925, Fermi followed with a paper in which he applied ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
