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Scandium Nitride
Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation. It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV. These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods. Scandium Nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide Hafnium(IV) oxide is the inorganic compound with the formula . Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. H ... (HfO2) substrate. References Scandium compounds Nitrides Rock salt crystal structure {{ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Scandium Phosphide
Scandium phosphide is an inorganic compound of scandium and phosphorus with the chemical formula . Synthesis ScP can be obtained by the reaction of scandium and phosphorus Phosphorus is a chemical element with the symbol P and atomic number 15. Elemental phosphorus exists in two major forms, white phosphorus and red phosphorus, but because it is highly reactive, phosphorus is never found as a free element on Ear ... at 1000 °C. ::4Sc + P4 -> 4ScP Physical properties This compound is calculated to be a semiconductor used in high power, high frequency applications and in laser diodes. Chemical properties ScP can be smelted with cobalt or nickel through electric arc to obtain ScCoP and ScNiP. References {{Phosphides Phosphides Scandium compounds Semiconductors Rock salt crystal structure ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Sublimation (phase Transition)
Sublimation is the transition of a substance directly from the solid to the gas state, without passing through the liquid state. Sublimation is an endothermic process that occurs at temperatures and pressures below a substance's triple point in its phase diagram, which corresponds to the lowest pressure at which the substance can exist as a liquid. The reverse process of sublimation is deposition or desublimation, in which a substance passes directly from a gas to a solid phase. Sublimation has also been used as a generic term to describe a solid-to-gas transition (sublimation) followed by a gas-to-solid transition ( deposition). While vaporization from liquid to gas occurs as evaporation from the surface if it occurs below the boiling point of the liquid, and as boiling with formation of bubbles in the interior of the liquid if it occurs at the boiling point, there is no such distinction for the solid-to-gas transition which always occurs as sublimation from the surface. At ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Scandium Compounds
: Scandium compounds are compounds containing the element scandium. The chemistry of scandium is almost completely dominated by the trivalent ion, Sc3+, due to its electron configuration, r3d14s2. The radii of M3+ ions in the table below indicate that the chemical properties of scandium ions have more in common with yttrium ions than with aluminium ions. In part because of this similarity, scandium is often classified as a lanthanide-like element. +3 oxidation state Oxides and hydroxides The oxide and the hydroxide are amphoteric: : + 3 → (scandate ion) : + 3 + 3 → α- and γ-ScOOH are isostructural with their aluminium hydroxide oxide counterparts. Solutions of in water are acidic due to hydrolysis. Halides and pseudohalides The halides , where X= Cl, Br, or I, are very soluble in water, but is insoluble. In all four halides, the scandium is 6-coordinated. The halides are Lewis acids; for example, dissolves in a solution containing excess fluorid ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hafnium Dioxide
Hafnium(IV) oxide is the inorganic compound with the formula . Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV) oxide is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride. Structure Hafnia typically adopts the same structure as zirconia (ZrO2). Unlike TiO2, which features six-coordinate Ti in all phases, zirconia and hafnia consist of seven-coordinate metal centres. A variety of other crystalline phases have been experimentally observed, including cubic fluorite (Fmm), tetragonal (P42/nmc), monoclinic (P21/c) an ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon Dioxide
Silicon dioxide, also known as silica, is an oxide of silicon with the chemical formula , most commonly found in nature as quartz and in various living organisms. In many parts of the world, silica is the major constituent of sand. Silica is one of the most complex and most abundant families of materials, existing as a compound of several minerals and as a synthetic product. Notable examples include fused quartz, fumed silica, silica gel, opal and aerogels. It is used in structural materials, microelectronics (as an electrical insulator), and as components in the food and pharmaceutical industries. Structure In the majority of silicates, the silicon atom shows tetrahedral coordination, with four oxygen atoms surrounding a central Si atomsee 3-D Unit Cell. Thus, SiO2 forms 3-dimensional network solids in which each silicon atom is covalently bonded in a tetrahedral manner to 4 oxygen atoms. In contrast, CO2 is a linear molecule. The starkly different structures of the dioxid ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductors
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
HVPE
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides. Carrier gasses commonly used include ammonia, hydrogen and various chlorides. HVPE technology can significantly reduce the cost of production compared to the most common method of vapor deposition of organometallic compounds (MOCVD Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. ...). Cost reduction is achieved by significantly reducing the consumption of NH3, cheaper source materials than in MOCVD, reducing the capital equipment costs, due ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Molecular-beam Epitaxy
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). History Original ideas of MBE process were first established by Günther. Films he deposited were not epitaxial, but were deposited on glass substrates. With the development of vacuum technology, MBE process was demonstrated by Davey and Pankey who succeeded in growing GaAs epitaxial films on single crystal GaAs substrates using Günther's method. Major subsequent development of MBE films was enabled by J.R. Arthur's investigations of kinetic behavior of growth mechanisms and Alfred Y. Cho's in situ observation of MBE process usin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Sputter Deposition
Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1 percent) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as a moderator and move diffusively, reaching the substrates or vacuum chamber wall and condensing after undergoing a random walk. The entire range from high-energy ballistic impact to low-energy ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium
Indium is a chemical element with the symbol In and atomic number 49. Indium is the softest metal that is not an alkali metal. It is a silvery-white metal that resembles tin in appearance. It is a post-transition metal that makes up 0.21 parts per million of the Earth's crust. Indium has a melting point higher than sodium and gallium, but lower than lithium and tin. Chemically, indium is similar to gallium and thallium, and it is largely intermediate between the two in terms of its properties. Indium was discovered in 1863 by Ferdinand Reich and Hieronymous Theodor Richter by spectroscopic methods. They named it for the indigo blue line in its spectrum. Indium was isolated the next year. Indium is a minor component in zinc sulfide ores and is produced as a byproduct of zinc refinement. It is most notably used in the semiconductor industry, in low-melting-point metal alloys such as solders, in soft-metal high-vacuum seals, and in the production of transparent conductive coati ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nitrogen
Nitrogen is the chemical element with the symbol N and atomic number 7. Nitrogen is a nonmetal and the lightest member of group 15 of the periodic table, often called the pnictogens. It is a common element in the universe, estimated at seventh in total abundance in the Milky Way and the Solar System. At standard temperature and pressure, two atoms of the element bond to form N2, a colorless and odorless diatomic gas. N2 forms about 78% of Earth's atmosphere, making it the most abundant uncombined element. Nitrogen occurs in all organisms, primarily in amino acids (and thus proteins), in the nucleic acids ( DNA and RNA) and in the energy transfer molecule adenosine triphosphate. The human body contains about 3% nitrogen by mass, the fourth most abundant element in the body after oxygen, carbon, and hydrogen. The nitrogen cycle describes the movement of the element from the air, into the biosphere and organic compounds, then back into the atmosphere. Many indus ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanometre
330px, Different lengths as in respect to the molecular scale. The nanometre (international spelling as used by the International Bureau of Weights and Measures; SI symbol: nm) or nanometer (American and British English spelling differences#-re, -er, American spelling) is a units of measurement, unit of length in the International System of Units (SI), equal to one billionth (short scale) of a metre () and to 1000 picometres. One nanometre can be expressed in scientific notation as , and as metres. History The nanometre was formerly known as the millimicrometre – or, more commonly, the millimicron for short – since it is of a micron (micrometre), and was often denoted by the symbol mμ or (more rarely and confusingly, since it logically should refer to a ''millionth'' of a micron) as μμ. Etymology The name combines the SI prefix ''nano-'' (from the Ancient Greek , ', "dwarf") with the parent unit name ''metre'' (from Greek , ', "unit of measurement"). ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
