Sublimation Sandwich Method
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Sublimation Sandwich Method
The sublimation sandwich method (also called the sublimation sandwich process and the sublimation sandwich technique) is a kind of physical vapor deposition used for creating man-made crystals. Silicon carbide is the most common crystal grown this way, though others crystals may also be created with it (notably gallium nitride). In this method, the environment around a single crystal or a polycrystalline plate is filled with vapor heated to between 1600°C and 2100°C-- changes to this environment can affect the gas phase stoichiometry. The source-to-crystal distance is kept between 0.02-0.03mm (very low). Parameters that can affect crystal growth include source-to-substrate distance, temperature gradient, and the presence of tantalum for gathering excess carbon. High growth rates are the result of small source-to-seed distances combined with a large heat flux onto a small amount of source material with no more than a moderate temperature difference between the substrate and t ...
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Physical Vapor Transport Crucible-en
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Physical Vapor Deposition
Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation. PVD is used in the manufacturing of items which require thin films for optical, mechanical, electrical, acoustic or chemical functions. Examples include semiconductor devices such as thin-film solar cells, microelectromechanical devices such as thin film bulk acoustic resonator, aluminized PET film for food packaging and balloons, and titanium nitride coated cutting tools for metalworking. Besides PVD tools for fabrication, special smaller tools used mainly for scientific purposes have been developed. The source material i ...
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Silicon Carbide
Silicon carbide (SiC), also known as carborundum (), is a hard chemical compound containing silicon and carbon. A semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and Cat's whisker detector, detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Natural occurrence Naturally occurring moissanite is found in only minut ...
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Gallium Nitride
Gallium nitride () is a binary III/ V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in high radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteris ...
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Stoichiometry
Stoichiometry refers to the relationship between the quantities of reactants and products before, during, and following chemical reactions. Stoichiometry is founded on the law of conservation of mass where the total mass of the reactants equals the total mass of the products, leading to the insight that the relations among quantities of reactants and products typically form a ratio of positive integers. This means that if the amounts of the separate reactants are known, then the amount of the product can be calculated. Conversely, if one reactant has a known quantity and the quantity of the products can be empirically determined, then the amount of the other reactants can also be calculated. This is illustrated in the image here, where the balanced equation is: : Here, one molecule of methane reacts with two molecules of oxygen gas to yield one molecule of carbon dioxide and two molecules of water. This particular chemical equation is an example of complete combustion. St ...
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Tantalum
Tantalum is a chemical element with the symbol Ta and atomic number 73. Previously known as ''tantalium'', it is named after Tantalus, a villain in Greek mythology. Tantalum is a very hard, ductile, lustrous, blue-gray transition metal that is highly corrosion-resistant. It is part of the refractory metals group, which are widely used as components of strong high-melting-point alloys. It is a group 5 element, along with vanadium and niobium, and it always occurs in geologic sources together with the chemically similar niobium, mainly in the mineral groups tantalite, columbite and coltan. The chemical inertness and very high melting point of tantalum make it valuable for laboratory and industrial equipment such as reaction vessels and vacuum furnaces. It is used in tantalum capacitors for electronic equipment such as computers. Tantalum is considered a technology-critical element by the European Commission. History Tantalum was discovered in Sweden in 1802 by Anders Ekeberg, ...
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Carbon
Carbon () is a chemical element with the symbol C and atomic number 6. It is nonmetallic and tetravalent In chemistry, the valence (US spelling) or valency (British spelling) of an element is the measure of its combining capacity with other atoms when it forms chemical compounds or molecules. Description The combining capacity, or affinity of an ...—its atom making four electrons available to form covalent bond, covalent chemical bonds. It belongs to group 14 of the periodic table. Carbon makes up only about 0.025 percent of Earth's crust. Three Isotopes of carbon, isotopes occur naturally, Carbon-12, C and Carbon-13, C being stable, while Carbon-14, C is a radionuclide, decaying with a half-life of about 5,730 years. Carbon is one of the Timeline of chemical element discoveries#Ancient discoveries, few elements known since antiquity. Carbon is the 15th Abundance of elements in Earth's crust, most abundant element in the Earth's crust, and the Abundance of the c ...
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Boule (crystal)
A boule is a single-crystal ingot produced by synthetic means. A boule of silicon is the starting material for most of the integrated circuits used today. In the semiconductor industry synthetic boules can be made by a number of methods, such as the Bridgman technique and the Czochralski process, which result in a cylindrical rod of material. In the Czochralski process a seed crystal is required to create a larger crystal, or ingot. This seed crystal is dipped into the pure molten silicon and slowly extracted. The molten silicon grows on the seed crystal in a crystalline fashion. As the seed is extracted the silicon solidifies and eventually a large, cylindrical boule is produced. A semiconductor crystal boule is normally cut into circular wafers using an inside hole diamond saw or diamond wire saw, and each wafer is lapped and polished to provide substrates suitable for the fabrication of semiconductor devices on its surface. The process is also used to create sapphires, ...
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Epitaxy
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ...
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Polymorphism (materials Science)
In materials science, polymorphism describes the existence of a solid material in more than one form or crystal structure. Polymorphism is a form of isomerism. Any crystalline material can exhibit the phenomenon. Allotropy refers to polymorphism for chemical elements. Polymorphism is of practical relevance to pharmaceuticals, agrochemicals, pigments, dyestuffs, foods, and explosives. According to IUPAC, a polymorphic transition is "A reversible transition of a solid crystalline phase at a certain temperature and pressure (the inversion point) to another phase of the same chemical composition with a different crystal structure." According to McCrone, polymorphs are "different in crystal structure but identical in the liquid or vapor states." Materials with two polymorphs are called dimorphic, with three polymorphs, trimorphic, etc. Examples Many compounds exhibit polymorphism. It has been claimed that "every compound has different polymorphic forms, and that, in general, the n ...
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Lely Method
The Lely method, also known as the Lely process or Lely technique, is a crystal growth technology used for producing silicon carbide crystals for the semiconductor industry. The patent for this method was filed in the Netherlands in 1954 and in the United States in 1955 by Jan Anthony Lely of Philips Electronics. The patent was subsequently granted on 30 September 1958, and was refined by D.R. Hamilton et al. in 1960, and by V.P. Novikov and V.I. Ionov in 1968. Overview The Lely method produces bulk silicon carbide crystals through the process of sublimation. Silicon carbide powder is loaded into a graphite crucible, which is purged with Argon gas and heated to approximately . The silicon carbide near the outer walls of the crucible sublimes and is deposited on a graphite rod near the center of the crucible, which is at a lower temperature. Several modified versions of the Lely process exist, most commonly the silicon carbide is heated from the bottom end rather than the wall ...
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