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Strained Silicon Directly On Insulator
Strained silicon directly on insulator (SSDOI) is a procedure developed by IBM which removes the silicon germanium layer in the strained silicon process leaving the strained silicon directly on the insulator. In contrast, strained silicon on SGOI provides a strained silicon layer on a relaxed silicon germanium layer on an insulator, as developed by MIT The Massachusetts Institute of Technology (MIT) is a private land-grant research university in Cambridge, Massachusetts. Established in 1861, MIT has played a key role in the development of modern technology and science, and is one of the mo .... References Semiconductor device fabrication {{Compu-hardware-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Germanium
Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was discovered comparatively late in the discovery of the elements. Germanium ranks near fiftieth in relative abundance of the elements in the Earth's crust. In 1869, Dmitri Mendeleev predicted its existence and some of its properties from its position on his periodic table, and called the element ekasilicon. In 1886, Clemens Winkler at Freiberg University found the new element, along with silver and sulfur, in the mineral argyrodite. Winkler named the element after his country, Germany. Germanium is mined primarily from sphalerite (the primary ore of zinc), though germanium is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Strained Silicon
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors and thus better mobility, resulting in better chip performance and lower energy consumption. These electrons can move 70% faster allowing strained silicon transistors to switch 35% faster. More recent advances include deposition of strained silicon using metalorganic vapor-phase epitaxy (MOVPE) with metalorganics as starting sources, e.g. silicon sour ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
