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Mott–Schottky Plot
In semiconductor electrochemistry, a Mott–Schottky plot describes the reciprocal of the square of capacitance (1/C^2) versus the potential difference between bulk semiconductor and bulk electrolyte. In many theories, and in many experimental measurements, the plot is linear. The use of Mott–Schottky plots to determine system properties (such as flatband potential, doping density or Helmholtz capacitance) is termed Mott–Schottky analysis. Consider the semiconductor/electrolyte junction shown in Figure 1. Under applied bias voltage V the size of the depletion layer w is w=^ (1) Here \varepsilon=\varepsilon_r \varepsilon_0 is the permittivity, q is the elementary charge, _ is the doping density, _ is the built-in potential. The depletion region contains positive charge compensated by ionic negative charge at the semiconductor surface (in the liquid electrolyte side). Charge separation forms a dielectric capacitor at the interface of the metal/semiconductor contact. We ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Photoelectrochemistry
Photoelectrochemistry is a subfield of study within physical chemistry concerned with the interaction of light with electrochemical systems. It is an active domain of investigation. One of the pioneers of this field of electrochemistry was the German electrochemist Heinz Gerischer. The interest in this domain is high in the context of development of renewable energy conversion and storage technology. Historical approach Photoelectrochemistry has been intensively studied in the 1970-80s because of the first peak oil crisis. Because fossil fuels are non-renewable, it is necessary to develop processes to obtain renewable resources and use clean energy. Artificial photosynthesis, photoelectrochemical water splitting and regenerative solar cells are of special interest in this context. The photovoltaic effect was discovered by Alexandre Edmond Becquerel. Heinz Gerischer, H. Tributsch, AJ. Nozik, AJ. Bard, A. Fujishima, K. Honda, PE. Laibinis, K. Rajeshwar, TJ Meyer, PV. Kamat, N.S. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Reference Electrode
A reference electrode is an electrode which has a stable and well-known electrode potential. The high stability of the electrode potential is usually reached by employing a redox system with constant (buffered or saturated) concentrations of each participant of the redox reaction. There are many ways reference electrodes are used. The simplest is when the reference electrode is used as a half-cell to build an electrochemical cell. This allows the reduction potential, potential of the other half cell to be determined. An accurate and practical method to measure an electrode's potential in isolation (absolute electrode potential) has yet to be developed. Aqueous reference electrodes Common reference electrodes and potential with respect to the standard hydrogen electrode (SHE): * Standard hydrogen electrode (SHE) (E = 0.000 V) activity of H+ = 1 Molar * Normal hydrogen electrode (NHE) (E ≈ 0.000 V) concentration H+ = 1 Molar * Reversible hydrogen electrode (RHE) (E = 0.000 V ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Capacitance
Quantum capacitance, also called chemical capacitance and electrochemical capacitance C_\bar, is a quantity first introduced by Serge Luryi (1988), and is defined as the variation of electrical charge q with respect to the variation of electrochemical potential \bar, i.e., C_ = \frac. In the simplest example, if you make a parallel-plate capacitor where one or both of the plates has a low density of states, then the capacitance is ''not'' given by the normal formula for parallel-plate capacitors, C_e. Instead, the capacitance is lower, as if there was another capacitor in series, C_q. This second capacitance, related to the density of states of the plates, is the quantum capacitance and is represented by C_q. The equivalent capacitance is called electrochemical capacitance \frac = \frac + \frac. Quantum capacitance is especially important for low-density-of-states systems, such as a 2-dimensional electronic system in a semiconductor surface or interface or graphene, and can ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrochemical Impedance Spectroscopy
Dielectric spectroscopy (which falls in a subcategory of impedance spectroscopy) measures the dielectric properties of a medium as a function of frequency.Kremer F., Schonhals A., Luck W. Broadband Dielectric Spectroscopy. – Springer-Verlag, 2002. It is based on the interaction of an external field with the electric dipole moment of the sample, often expressed by permittivity. It is also an experimental method of characterizing electrochemical systems. This technique measures the impedance of a system over a range of frequencies, and therefore the frequency response of the system, including the energy storage and dissipation properties, is revealed. Often, data obtained by electrochemical impedance spectroscopy (EIS) is expressed graphically in a Bode plot or a Nyquist plot. Impedance is the opposition to the flow of alternating current (AC) in a complex system. A passive complex electrical system comprises both energy dissipater (resistor) and energy storage (capacitor) eleme ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Debye Length
In plasmas and electrolytes, the Debye length \lambda_ (also called Debye radius), is a measure of a charge carrier's net electrostatic effect in a solution and how far its electrostatic effect persists. With each Debye length the charges are increasingly electrically screened and the electric potential decreases in magnitude by 1/ e. A Debye sphere is a volume whose radius is the Debye length. Debye length is an important parameter in plasma physics, electrolytes, and colloids (DLVO theory). The corresponding Debye screening wave vector k_=1/\lambda_ for particles of density n, charge q at a temperature T is given by k_^2=4\pi n q^2/(k_T) in Gaussian units. Expressions in MKS units will be given below. The analogous quantities at very low temperatures (T \to 0) are known as the Thomas–Fermi length and the Thomas–Fermi wave vector. They are of interest in describing the behaviour of electrons in metals at room temperature. The Debye length is named after the Dutch-America ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Capacitance–voltage Profiling
Capacitance–voltage profiling (or C–V profiling, sometimes CV profiling) is a technique for characterizing semiconductor materials and devices. The applied voltage is varied, and the capacitance is measured and plotted as a function of voltage. The technique uses a metal– semiconductor junction ( Schottky barrier) or a p–n junctionJ. Hilibrand and R.D. Gold, "Determination of the Impurity Distribution in Junction Diodes From Capacitance-Voltage Measurements", RCA Review, vol. 21, p. 245, June 1960 or a MOSFET to create a depletion region, a region which is empty of conducting electrons and holes, but may contain ionized donors and electrically active defects or ''traps''. The depletion region with its ionized charges inside behaves like a capacitor. By varying the voltage applied to the junction it is possible to vary the depletion width. The dependence of the depletion width upon the applied voltage provides information on the semiconductor's internal characteristics ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Mott–Schottky Equation
The Mott–Schottky equation relates the capacitance to the applied voltage across a semiconductor-electrolyte junction. \frac = \frac (V - V_ - \frac) where C is the differential capacitance \frac, \epsilon is the dielectric constant of the semiconductor, \epsilon_0 is the permittivity of free space, A is the area such that the depletion region volume is w A, e is the elementary charge, N_d is the density of dopants, V is the applied potential, V_ is the flat band potential, k_B is the Boltzmann constant, and T is the absolute temperature. This theory predicts that a Mott–Schottky plot will be linear. The doping density N_d can be derived from the slope of the plot (provided the area and dielectric constant are known). The flatband potential can be determined as well; absent the temperature term, the plot would cross the V-axis at the flatband potential. Derivation Under an applied potential V, the width of the depletion region is w = (\frac ( V - V_ ) )^\frac Using ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Work Function
In solid-state physics, the work function (sometimes spelt workfunction) is the minimum thermodynamic work (i.e., energy) needed to remove an electron from a solid to a point in the vacuum immediately outside the solid surface. Here "immediately" means that the final electron position is far from the surface on the atomic scale, but still too close to the solid to be influenced by ambient electric fields in the vacuum. The work function is not a characteristic of a bulk material, but rather a property of the surface of the material (depending on crystal face and contamination). Definition The work function for a given surface is defined by the difference :W = -e\phi - E_, where is the charge of an electron, is the electrostatic potential in the vacuum nearby the surface, and is the Fermi level (electrochemical potential of electrons) inside the material. The term is the energy of an electron at rest in the vacuum nearby the surface. In practice, one directly controls by ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dielectric Constant
The relative permittivity (in older texts, dielectric constant) is the permittivity of a material expressed as a ratio with the electric permittivity of a vacuum. A dielectric is an insulating material, and the dielectric constant of an insulator measures the ability of the insulator to store electric energy in an electrical field. Permittivity is a material's property that affects the Coulomb force between two point charges in the material. Relative permittivity is the factor by which the electric field between the charges is decreased relative to vacuum. Likewise, relative permittivity is the ratio of the capacitance of a capacitor using that material as a dielectric, compared with a similar capacitor that has vacuum as its dielectric. Relative permittivity is also commonly known as the dielectric constant, a term still used but deprecated by standards organizations in engineering as well as in chemistry. Definition Relative permittivity is typically denoted as (sometimes ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Capacitance
Capacitance is the capability of a material object or device to store electric charge. It is measured by the change in charge in response to a difference in electric potential, expressed as the ratio of those quantities. Commonly recognized are two closely related notions of capacitance: ''self capacitance'' and ''mutual capacitance''. An object that can be electrically charged exhibits self capacitance, for which the electric potential is measured between the object and ground. Mutual capacitance is measured between two components, and is particularly important in the operations of the capacitor, a device designed for this purpose as an elementary Linear circuit, linear electronic component. Capacitance is a function only of the geometry of the design of the capacitor, e.g., the opposing surface area of the plates and the distance between them, and the permittivity of the dielectric material between the plates. For many dielectric materials, the permittivity and thus the capaci ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Capacitor
A capacitor is a device that stores electrical energy in an electric field by virtue of accumulating electric charges on two close surfaces insulated from each other. It is a passive electronic component with two terminals. The effect of a capacitor is known as capacitance. While some capacitance exists between any two electrical conductors in proximity in a circuit, a capacitor is a component designed to add capacitance to a circuit. The capacitor was originally known as the condenser, a term still encountered in a few compound names, such as the ''condenser microphone''. The physical form and construction of practical capacitors vary widely and many types of capacitor are in common use. Most capacitors contain at least two electrical conductors often in the form of metallic plates or surfaces separated by a dielectric medium. A conductor may be a foil, thin film, sintered bead of metal, or an electrolyte. The nonconducting dielectric acts to increase the capacitor's c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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