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Memory Bandwidth
Memory bandwidth is the rate at which data can be read from or stored into a semiconductor memory by a central processing unit, processor. Memory bandwidth is usually expressed in units of bytes per second, bytes/second, though this can vary for systems with natural data sizes that are not a multiple of the commonly used 8-bit bytes. Memory bandwidth that is advertised for a given memory or system is usually the maximum theoretical bandwidth. In practice the observed memory bandwidth will be less than (and is guaranteed not to exceed) the advertised bandwidth. A variety of computer benchmarks exist to measure sustained memory bandwidth using a variety of access patterns. These are intended to provide insight into the memory bandwidth that a system should sustain on various classes of real applications. Measurement conventions There are three different conventions for defining the quantity of data transferred in the numerator of "bytes/second": #The bcopy convention: counts the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Memory
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per cell. Most types of semiconductor memory have the property of random access, which means that it takes the same amount of time to access any memory location, so data can be efficiently accessed in any random order. This contrasts with data storage media such as hard disks and CDs which ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
LGA 2011
LGA 2011, also called ''Socket R'', is a CPU socket by Intel released on November 14, 2011. It launched along with LGA 1356 to replace its predecessor, LGA 1366 (Socket B) and LGA 1567. While LGA 1356 was designed for dual-processor or low-end servers, LGA 2011 was designed for high-end desktops and high-performance servers. The socket has 2011 protruding pins that touch contact points on the underside of the processor. The LGA 2011 socket uses QPI to connect the CPU to additional CPUs. DMI 2.0 is used to connect the processor to the PCH. The memory controller and 40 PCI Express (PCIe) lanes are integrated on the CPU. On a secondary processor an extra ×4 PCIe interface replaces the DMI interface. As with its predecessor LGA 1366, there is no provisioning for integrated graphics. This socket supports four DDR3 or DDR4 SDRAM memory channels with up to three unbuffered or registered DIMMs per channel, as well as up to 40 PCI Express 2.0 or 3.0 lanes. LGA ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Memory Timings
Memory timings or RAM timings describe the timing information of a memory module. Due to the inherent qualities of VLSI and microelectronics, memory chips require time to fully execute commands. Executing commands too quickly will result in data corruption and results in system instability. With appropriate time between commands, memory modules/chips can be given the opportunity to fully switch transistors, charge capacitors and correctly signal back information to the memory controller. Because system performance depends on how fast memory can be used, this timing directly affects the performance of the system. The timing of modern synchronous dynamic random-access memory (SDRAM) is commonly indicated using four parameters: CL, TRCD, TRP, and TRAS in units of clock cycles; they are commonly written as four numbers separated with hyphens, ''e.g.'' 7-8-8-24. The fourth (tRAS) is often omitted, or a fifth, the Command rate, sometimes added (normally 2T or 1T, also written 2N, 1N). Th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Memory Latency
''Memory latency'' is the time (the latency) between initiating a request for a byte or word in memory until it is retrieved by a processor. If the data are not in the processor's cache, it takes longer to obtain them, as the processor will have to communicate with the external memory cells. Latency is therefore a fundamental measure of the speed of memory: the less the latency, the faster the reading operation. Latency should not be confused with memory bandwidth, which measures the throughput of memory. Latency can be expressed in clock cycles or in time measured in nanoseconds. Over time, memory latencies expressed in clock cycles have been fairly stable, but they have improved in time.Crucial Technology, "Speed ''vs.'' Latency: Why CAS latency isn't an accurate measure of memory performance/ref> See also * Burst mode (computing) * CAS latency * Multi-channel memory architecture * Interleaved memory * SDRAM burst ordering * SDRAM latency Memory timings or RAM timings descr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
List Of Device Bandwidths
This is a list of interface bit rates, is a measure of information transfer rates, or digital bandwidth capacity, at which digital interfaces in a computer or network can communicate over various kinds of buses and channels. The distinction can be arbitrary between a ''computer bus'', often closer in space, and larger telecommunications networks. Many device interfaces or protocols (e.g., SATA, USB, SAS, PCIe) are used both inside many-device boxes, such as a PC, and one-device-boxes, such as a hard drive enclosure. Accordingly, this page lists both the internal ribbon and external communications cable standards together in one sortable table. Factors limiting actual performance, criteria for real decisions Most of the listed rates are theoretical maximum throughput measures; in practice, the actual effective throughput is almost inevitably lower in proportion to the load from other devices (network/bus contention), physical or temporal distances, and other overhead in data ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dynamic Random-access Memory
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CAS Latency
Column Address Strobe (CAS) latency, or CL, is the delay in clock cycles between the READ command and the moment data is available. In asynchronous DRAM, the interval is specified in nanoseconds (absolute time). In synchronous DRAM, the interval is specified in clock cycles. Because the latency is dependent upon a number of clock ticks instead of absolute time, the actual time for an SDRAM module to respond to a CAS event might vary between uses of the same module if the clock rate differs. RAM operation background Dynamic RAM is arranged in a rectangular array. Each row is selected by a horizontal ''word line''. Sending a logical high signal along a given row enables the MOSFETs present in that row, connecting each storage capacitor to its corresponding vertical ''bit line''. Each bit line is connected to a ''sense amplifier'' that amplifies the small voltage change produced by the storage capacitor. This amplified signal is then output from the DRAM chip as well as driven ba ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dynamic Random-access Memory
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Intel Corporation
Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California. It is the world's largest semiconductor chip manufacturer by revenue, and is one of the developers of the x86 series of instruction sets, the instruction sets found in most personal computers (PCs). Incorporated in Delaware, Intel ranked No. 45 in the 2020 ''Fortune'' 500 list of the largest United States corporations by total revenue for nearly a decade, from 2007 to 2016 fiscal years. Intel supplies microprocessors for computer system manufacturers such as Acer, Lenovo, HP, and Dell. Intel also manufactures motherboard chipsets, network interface controllers and integrated circuits, flash memory, graphics chips, embedded processors and other devices related to communications and computing. Intel (''int''egrated and ''el''ectronics) was founded on July 18, 1968, by semiconductor pioneers Gordon Moore (of Moore's law) and Robert Noyce (1927–19 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Central Processing Unit
A central processing unit (CPU), also called a central processor, main processor or just processor, is the electronic circuitry that executes instructions comprising a computer program. The CPU performs basic arithmetic, logic, controlling, and input/output (I/O) operations specified by the instructions in the program. This contrasts with external components such as main memory and I/O circuitry, and specialized processors such as graphics processing units (GPUs). The form, design, and implementation of CPUs have changed over time, but their fundamental operation remains almost unchanged. Principal components of a CPU include the arithmetic–logic unit (ALU) that performs arithmetic and logic operations, processor registers that supply operands to the ALU and store the results of ALU operations, and a control unit that orchestrates the fetching (from memory), decoding and execution (of instructions) by directing the coordinated operations of the ALU, registers and other co ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dual-channel
In the fields of digital electronics and computer hardware, multi-channel memory architecture is a technology that increases the data transfer rate between the DRAM memory and the memory controller by adding more channels of communication between them. Theoretically, this multiplies the data rate by exactly the number of channels present. Dual-channel memory employs two channels. The technique goes back as far as the 1960s having been used in IBM System/360 Model 91 and in CDC 6600. Modern high-end desktop and workstation processors such as the AMD Ryzen Threadripper series and the Intel Core i9 Extreme Edition lineup support quad-channel memory. Server processors from the AMD Epyc series and the Intel Xeon platforms give support to memory bandwidth starting from quad-channel module layout to up to octa-channel layout. In March 2010, AMD released Socket G34 and Magny-Cours Opteron 6100 series processors with support for quad-channel memory. In 2006, Intel released chipsets that s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DDR3 SDRAM
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth (" double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. The primary benefit of DDR3 SDRAM over its immediate predecessor DDR2 SDRAM, is its ability to transfer data at twice the rate (eight times the speed of its internal memory arrays), enabling higher bandwidth or peak data rates. The DDR3 standard permits DRAM chip capacities of up to 8 gigabits (Gbit), and up to four ranks ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
