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LDMOS
LDMOS (laterally-diffused metal-oxide semiconductor) is a planar double-diffused MOSFET (metal–oxide–semiconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles. As an example, the drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields. The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks, enabling the majority of the world's cellular voice and data traffic. LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source breakdown voltage u ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Power MOSFET
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high Switch#Electronic switches, switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to be higher than the voltage under control. The design of power MOSFETs was made possible by the evolution of MOSFET and CMOS technology, used for manufacturing integrated circuits since the 1960s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET. The power MOSFET, which is commonly used in power electronics, was adapted from the standard MOSFET and commercially introduced in the 1970s. The power MOSFET is the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
RF Power Amplifier
A radio-frequency power amplifier (RF power amplifier) is a type of electronic amplifier that converts a low-power radio-frequency signal into a higher-power signal. Typically, RF power amplifiers drive the antenna of a transmitter. Design goals often include gain, power output, bandwidth, power efficiency, linearity (low signal compression at rated output), input and output impedance matching, and heat dissipation. Amplifier classes Many modern RF amplifiers operate in different modes, called "classes", to help achieve different design goals. Some classes are class A, class AB, class B, class C, which are considered the linear amplifier classes. In these classes the active device is used as a controlled current source. The bias at the input determines the class of the amplifier. A common trade-off in power amplifier design is the trade-off between efficiency and linearity. The previously named classes become more efficient, but less linear, in the order ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Audio Power Amplifier
An audio power amplifier (or power amp) is an electronic amplifier that amplifies low-power electronic audio signals, such as the signal from a radio receiver or an electric guitar pickup, to a level that is high enough for driving loudspeakers or headphones. Audio power amplifiers are found in all manner of sound systems including sound reinforcement, public address and home audio systems and musical instrument amplifiers like guitar amplifiers. It is the final electronic stage in a typical audio playback chain before the signal is sent to the loudspeakers. The preceding stages in such a chain are low power audio amplifiers which perform tasks like pre-amplification of the signal (this is particularly associated with record turntable signals, microphone signals and electric instrument signals from pickups, such as the electric guitar and electric bass), equalization (e.g., adjusting the bass and treble), tone controls, mixing different input signals or adding el ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Mobile Network
A cellular network or mobile network is a communication network where the link to and from end nodes is wireless. The network is distributed over land areas called "cells", each served by at least one fixed-location transceiver (typically three cell sites or base transceiver stations). These base stations provide the cell with the network coverage which can be used for transmission of voice, data, and other types of content. A cell typically uses a different set of frequencies from neighboring cells, to avoid interference and provide guaranteed service quality within each cell. When joined together, these cells provide radio coverage over a wide geographic area. This enables numerous portable transceivers (e.g., mobile phones, tablets and laptops equipped with mobile broadband modems, pagers, etc.) to communicate with each other and with fixed transceivers and telephones anywhere in the network, via base stations, even if some of the transceivers are moving through more than ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tower Semiconductor
Tower Semiconductor Ltd. is an Israeli company that manufactures integrated circuits using specialty process technologies, including SiGe, BiCMOS, Silicon Photonics, SOI, mixed-signal and RFCMOS, CMOS image sensors, non-imaging sensors, power management (BCD), and non-volatile memory (NVM) as well as MEMS capabilities. Tower Semiconductor also owns 51% of TPSCo, an enterprise with Nuvoton Technology Corporation Japan (NTCJ). Overview The company manufactures specialty analog integrated circuits for semiconductor companies such as: On Semiconductor, Intel, Broadcom, Panasonic, Teledyne, Samsung, Skyworks Solutions, Semtech and Vishay – Siliconix. Moreover, the company also has Qualified open foundry Silicon Photonics platform which is used by companies such as Inphi Corporation. Tower Semiconductor operates seven manufacturing facilities: Fab 1 and Fab 2 (150mm and 200mm) located in Migdal Haemek, Israel, Fab 3 and Fab 9 (200mm) located in Newport Beach, California and in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
RF Micro Devices
RF Micro Devices (also known as RFMD or RF Micro), was an American company that designed and manufactured high-performance radio frequency systems and solutions for applications that drive wireless and broadband communications. Headquartered in Greensboro, North Carolina, RFMD traded on the NASDAQ under the symbol RFMD. The Company was founded in Greensboro, North Carolina, in 1991. RF Micro has 3500 employees, 1500 of them in Guilford County, North Carolina. The company's products, predominantly radio frequency integrated circuits (RFICs) and packaged modules that utilize them, were used in cellular networks and mobile phones, for wireless connectivity such as wireless LAN, GPS and Bluetooth, in cable modems and cable TV infrastructure, and for other applications including military radar. The most important applications in terms of sales were GaAs-based power amplifiers and antenna control solutions used in mobile phones (including smartphones), WiFi RF front-ends and component ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
GLOBALFOUNDRIES
GlobalFoundries Inc. (GF or GloFo) is a multinational semiconductor contract manufacturing and design company incorporated in the Cayman Islands and headquartered in Malta, New York. Created by the divestiture of the manufacturing arm of AMD, the company was privately owned by Mubadala Investment Company, the sovereign wealth fund of the United Arab Emirates, until an initial public offering (IPO) in October 2021. The company manufactures chips designed for markets such as mobility, automotive, computing and wired connectivity, consumer internet of things (IoT) and industrial. As of 2021, GlobalFoundries is the fourth-largest semiconductor manufacturer; it produces chips for more than 7% of the $86 billion semiconductor manufacturing services industry. It is the only one with operations in Singapore, the European Union, and the United States: one 200 mm and one 300 mm wafer fabrication plant in Singapore; one 300 mm plant in Dresden, Germany; one 200 m ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Vanguard International Semiconductor Corporation
Vanguard International Semiconductor Corporation (VIS) is a Taiwanese specialized IC foundry service provider, founded in December 1994 in Hsinchu Science Park by Morris Chang. In March 1998, VIS became a listed company on the Taiwan Over-The-Counter Stock Exchange (OTC) with the main shareholders TSMC, National Development Fund and other institutional investors. History VIS was working as a subcontractor for TSMC for the manufacturing of logic and mixed signal products, primarily focusing on the production and development of DRAM and other memory IC. In 2000, VIS announced its plan to transform from a DRAM manufacturer into a foundry service provider. As of February 2004, VIS completely terminated its DRAM production and became a pure-play foundry company. VIS acquired Fab 4 and Fab 5, two lines of 200-mm fab from Winbond Electronics Corp., expanding its production ability. The purchase was finalized in January, 2008. VIS is sponsored by the Industrial Technology Researc ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
STMicroelectronics
STMicroelectronics N.V. commonly referred as ST or STMicro is a Dutch multinational corporation and technology company of French-Italian origin headquartered in Plan-les-Ouates near Geneva, Switzerland and listed on the French stock market. ST is the largest European semiconductor contract manufacturing and design company. The company resulted from the merger of two government-owned semiconductor companies in 1987: Thomson Semiconducteurs of France and SGS Microelettronica of Italy. History ST was formed in 1987 by the merger of two government-owned semiconductor companies: Italian SGS Microelettronica (where SGS stands for ''Società Generale Semiconduttori'', "Semiconductors' General Company"), and French Thomson Semiconducteurs, the semiconductor arm of Thomson. SGS Microelettronica originated in 1972 from a previous merger of two companies: * ATES (Aquila Tubi e Semiconduttori), a vacuum tube and semiconductor maker headquartered in L'Aquila, the regional capital of th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Infineon Technologies
Infineon Technologies AG is a German semiconductor manufacturer founded in 1999, when the semiconductor operations of the former parent company Siemens AG were spun off. Infineon has about 50,280 employees and is one of the ten largest semiconductor manufacturers worldwide. In fiscal year 2021, the company achieved sales of €11.06 billion. Infineon bought Cypress Semiconductor in April 2020. Markets Infineon markets semiconductors and systems for automotive, industrial, and multimarket sectors, as well as chip card and security products. Infineon has subsidiaries in the US in Milpitas, California, and in the Asia-Pacific region, in Singapore and Tokyo, Japan. Infineon has a number of facilities in Europe, one in Dresden. Infineon's high power segment is in Warstein, Germany; Villach and Graz in Austria; Cegléd in Hungary; and Italy. It also runs R&D centers in France, Singapore, Romania, Taiwan, UK, Ukraine and India, as well as fabrication units in Singapore, Malaysia ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ampleon
Ampleon is a global semiconductor manufacturer headquartered in Nijmegen (Gelderland), Netherlands ) , anthem = ( en, "William of Nassau") , image_map = , map_caption = , subdivision_type = Sovereign state , subdivision_name = Kingdom of the Netherlands , established_title = Before independence , established_date = Spanish Netherl ... and founded on December 7, 2015, spun off from the NXP Semiconductors in May 2015, following the acquisition of the NXP Semiconductors RF Power business by the Jianguang Asset Management Co., Ltd. for US$1.8 billion. References External links *{{Official website, url=http://www.ampleon.com/ Semiconductor companies of the Netherlands Semiconductor device fabrication Government-owned companies of China Companies based in Gelderland Nijmegen ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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