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Lambda Diode
A lambda diode is an electronic circuit that combines a complementary pair of junction gated field effect transistors into a two-terminal device that exhibits an area of differential negative resistance much like a tunnel diode. The term refers to the shape of the ''V''–''I'' curve of the device, which resembles the Greek letter λ ''(lambda)''. Lambda diodes work at higher voltage than tunnel diodes. Whereas a typical tunnel diode may exhibit negative differential resistance approximately between 70 mV and 350 mV, this region occurs approximately between 1.5 V and 6 V in a lambda diode due to the higher pinch-off voltages of typical JFET devices. A lambda diode therefore cannot replace a tunnel diode directly. Moreover, in a tunnel diode the current reaches a minimum of about 20% of the peak current before rising again towards higher voltages. The lambda diode current approaches zero as voltage increases, before rising quickly again at a voltage high enough to cause gate–so ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Lambda Diode
A lambda diode is an electronic circuit that combines a complementary pair of junction gated field effect transistors into a two-terminal device that exhibits an area of differential negative resistance much like a tunnel diode. The term refers to the shape of the ''V''–''I'' curve of the device, which resembles the Greek letter λ ''(lambda)''. Lambda diodes work at higher voltage than tunnel diodes. Whereas a typical tunnel diode may exhibit negative differential resistance approximately between 70 mV and 350 mV, this region occurs approximately between 1.5 V and 6 V in a lambda diode due to the higher pinch-off voltages of typical JFET devices. A lambda diode therefore cannot replace a tunnel diode directly. Moreover, in a tunnel diode the current reaches a minimum of about 20% of the peak current before rising again towards higher voltages. The lambda diode current approaches zero as voltage increases, before rising quickly again at a voltage high enough to cause gate–so ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronic Circuit
An electronic circuit is composed of individual electronic components, such as resistors, transistors, capacitors, inductors and diodes, connected by conductive wires or traces through which electric current can flow. It is a type of electrical circuit and to be referred to as ''electronic'', rather than ''electrical'', generally at least one active component must be present. The combination of components and wires allows various simple and complex operations to be performed: signals can be amplified, computations can be performed, and data can be moved from one place to another. Circuits can be constructed of discrete components connected by individual pieces of wire, but today it is much more common to create interconnections by photolithographic techniques on a laminated substrate (a printed circuit board or PCB) and solder the components to these interconnections to create a finished circuit. In an integrated circuit or IC, the components and interconnections are formed on t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Negative Resistance
In electronics, negative resistance (NR) is a property of some electrical circuits and devices in which an increase in voltage across the device's terminals results in a decrease in electric current through it. This is in contrast to an ordinary resistor in which an increase of applied voltage causes a proportional increase in current due to Ohm's law, resulting in a positive resistance. While a positive resistance consumes power from current passing through it, a negative resistance produces power. Under certain conditions it can increase the power of an electrical signal, amplifying it. Negative resistance is an uncommon property which occurs in a few nonlinear electronic components. In a nonlinear device, two types of resistance can be defined: 'static' or 'absolute resistance', the ratio of voltage to current v / i, and ''differential resistance'', the ratio of a change in voltage to the resulting change in current \Delta v/\Delta i. The term negative resistance means ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Tunnel Diode
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently devised the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it. Tunnel diodes were first manufactured by Sony in 1957, followed by General Electric and other companies from about 1960, and are still made in low volume today. Tunnel diodes have a heavily doped positive-to-negative (P-N) junction that is about 10 nm (100 Å) wide. The heavy doping results in a broken band gap, where conduction band electron states on the N-side are more or le ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Zener Breakdown
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor, leading to numerous free minority carriers which suddenly increase the reverse current. Mechanism Under a high reverse-bias voltage, the p-n junction's depletion region widens which leads to a high-strength electric field across the junction."Zener and Avalanche Breakdown/Diodes" School of Engineering and Applied Sciences, Harvard University Sufficiently strong electric fields enable tunneling of electrons across the depletion region of a |
JFET
The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between ''source'' and ''drain'' terminals. By applying a reverse bias voltage to a ''gate'' terminal, the channel is ''pinched'', so that the electric current is impeded or switched off completely. A JFET is usually conducting when there is zero voltage between its gate and source terminals. If a potential difference of the proper polarity is applied between its gate and source terminals, the JFET will be more resistive to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs are sometimes referred to as ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Flip-flop (electronics)
In electronics, a flip-flop or latch is a circuit that has two stable states and can be used to store state information – a bistable multivibrator. The circuit can be made to change state by signals applied to one or more control inputs and will have one or two outputs. It is the basic storage element in sequential logic. Flip-flops and latches are fundamental building blocks of digital electronics systems used in computers, communications, and many other types of systems. Flip-flops and latches are used as data storage elements. A flip-flop is a device which stores a single ''bit'' (binary digit) of data; one of its two states represents a "one" and the other represents a "zero". Such data storage can be used for storage of ''state'', and such a circuit is described as sequential logic in electronics. When used in a finite-state machine, the output and next state depend not only on its current input, but also on its current state (and hence, previous inputs). It can also b ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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