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International Sports Federation For Persons With Intellectual Disability
INAS (International Sports Federation for Persons with Intellectual Disability; originally called INAS-FMH, later INAS-FID, INAS and now as Virtus Sport) was established in 1986 by professionals in the Netherlands who were involved in sport and wanted to promote the participation of athletes with mental handicap in elite sports. The organisations brand name is the International Federation for Intellectual Impairment Sport, promoting sport worldwide for athletes with intellectual disability, autism and Down syndrome. History The founding meeting of the first Executive Committee took place in January 1986 and the organisation became a member of the ICC – the International Coordinating Committee – the organisation that later became the International Paralympic Committee. INAS’ original membership was just 14 nations which has steadily grown into c.80 nations today. In 1989, the 1st World Games for Athletes with an Intellectual Disability were held in Harnos ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
1986
The year 1986 was designated as the International Year of Peace by the United Nations. Events January * January 1 ** Aruba gains increased autonomy from the Netherlands by separating from the Netherlands Antilles. **Spain and Portugal enter the European Community, which becomes the European Union in 1993. * January 11 – The Gateway Bridge in Brisbane, Australia, at this time the world's longest prestressed concrete free- cantilever bridge, is opened. * January 13– 24 – South Yemen Civil War. * January 20 – The United Kingdom and France announce plans to construct the Channel Tunnel. * January 24 – The Voyager 2 space probe makes its first encounter with Uranus. * January 25 – Yoweri Museveni's National Resistance Army Rebel group takes over Uganda after leading a five-year guerrilla war in which up to half a million people are believed to have been killed. They will later use January 26 as the official date to avoid a coincidence of dates with Dictator ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Athletics Championships
INAS World Athletics Championships are a biennial international athletics competition hosted by the International Sports Federation for Persons with Intellectual Disability for athletes who have an intellectual impairment and compete in the T20 and F20 classes. Athletic events contested Outdoor events ;Key: * M - men's events only contested * F - women's events only contested * X - both events contested * — - not contested in that year Indoor events INAS World Athletics Outdoor Championships INAS World Athletics Indoor Championships Medal tables Outdoor As of 2017. Scotland, England and Wales competed from 1989 to 2003, Great Britain Great Britain is an island in the North Atlantic Ocean off the northwest coast of continental Europe. With an area of , it is the largest of the British Isles, the largest European island and the ninth-largest island in the world. It is ... competed from 2005 onwards. Indoor As of 2020. See also * INAS World Athletics Cr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Equestrian Championships
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Ski Championships
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Hockey Championships
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Handball Championships
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Futsal Championships
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Football Championships
The INAS World Football Championship is an international association football competition for athletes with intellectual disabilities. It takes place every four years, typically in the country that also hosts the FIFA World Cup. It is organized by the International Sports Federation for Persons with Intellectual Disability ( INAS-FID) which also organizes championships in other sports. To participate in an INAS-FID event, an athlete must have an intellectual disability that was evident before the age of 18, significant limitations in adaptive behavior Adaptive behavior is behavior that enables a person (usually used in the context of children) to cope in their environment with greatest success and least conflict with others. This is a term used in the areas of psychology and special education. ..., and an IQ score below 75. The latter requirement led to controversy in 2006, when third-placed Germany was disqualified because the employed IQ tests did not accord with internation ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Cricket Championships
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Basketball Championships
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Rowing Championships
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
INAS World Cycling Championships
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
