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InGaP
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium ( AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle. Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide. Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconducto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Well
A quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and holes), leading to energy levels called "energy subbands", i.e., the carriers can only have discrete energy values. A wide variety of electronic quantum well devices have been developed based on the theory of quantum well systems. These devices have found applications in lasers, photodetectors, modulators, and switches for example. Compared to conventional devices, quantum well devices are much faster and operate much more economically and are a point of incredible importance to the technological and telecommunication industries. These quantum well devices a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
EFluor Nanocrystal
eFluor nanocrystals are a class of fluorophores made of semiconductor quantum dots. The nanocrystals can be provided as either primary amine, carboxylate, or non-functional groups on the surface, allowing conjugation to biomolecules of a researcher's choice. The nanocrystals can be conjugated to primary antibodies which are used for flow cytometry, immunohistochemistry, microarrays, in vivo imaging and microscopy. Size The optical emission properties of eFluor Nanocrystals are primarily dictated by their size, as discussed in the next section. There are at least two aspects to consider when discussing the "size" of a quantum dot: the physical size of the semiconductor structure, and the size of the entire quantum dot moiety including the associated ligands and hydrophilic coating. The size of the semiconductor structure is tabulated below, and reflects the diameter of the spherical quantum dot without ligands. eFluor Nanocrystals are rendered water-dispersable with a pate ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Aluminium Gallium Indium Phosphide
Aluminium gallium indium phosphide (, also AlInGaP, InGaAlP, GaInP, etc.) is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices, as it spans a direct bandgap from deep ultraviolet to infrared. AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers. Formation AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure. Heteroepitaxy is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film grows on a crystalline substrate or film of a different material. This technology is often used to grow crystalline films of materials for which single crystals cannot 1D view. Another example of heteroepitaxy is gallium nitride (GaN) on sapphire ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium
Indium is a chemical element with the symbol In and atomic number 49. Indium is the softest metal that is not an alkali metal. It is a silvery-white metal that resembles tin in appearance. It is a post-transition metal that makes up 0.21 parts per million of the Earth's crust. Indium has a melting point higher than sodium and gallium, but lower than lithium and tin. Chemically, indium is similar to gallium and thallium, and it is largely intermediate between the two in terms of its properties. Indium was discovered in 1863 by Ferdinand Reich and Hieronymous Theodor Richter by spectroscopic methods. They named it for the indigo blue line in its spectrum. Indium was isolated the next year. Indium is a minor component in zinc sulfide ores and is produced as a byproduct of zinc refinement. It is most notably used in the semiconductor industry, in low-melting-point metal alloys such as solders, in soft-metal high-vacuum seals, and in the production of transparent conductive coati ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium(III) Phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Manufacturing Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine. Uses InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. The company Infinera uses indium phosphide as its major t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Phosphide
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water. GaP has a microhardness of 9450 N/mm2, a Debye temperature of , and a thermal expansion coefficient of 5.3 K−1 at room temperature. Sulfur, silicon or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor. Gallium phosphide has applications in optical systems. Its static dielectric constant is 11.1 at room temperature. Its refractive index varies between ~3.2 and 5.0 across the visible range, which is higher than in most other semiconducting materials. In its transparent range, its index is higher than almost any other transparent material, in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Epitaxy
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
GaInAs
Gainas (Greek: Γαϊνάς) was a Gothic leader who served the Eastern Roman Empire as ''magister militum'' during the reigns of Theodosius I and Arcadius. Gainas began his military career as a common foot-soldier, but later commanded the barbarian contingent of Theodosius' army against the usurper Eugenius in 394. Under the command of Gainas, a man of "no lineage", was the young Alaric of the Balti dynasty. In 395, Stilicho sent him with his troops, under the cover of strengthening the armies of the East, to depose the prefect Rufinus, who was hostile to Stilicho. Gainas murdered Rufinus, but the eunuch Eutropius, who was likewise Stilicho's enemy, gained power. Gainas remained mostly unrewarded by the influential eunuch, which increased his resentment. In 399 he finally rose in stature by replacing ''magister militum'' Leo. This was after the latter failed to quell the insurrection of the Ostrogoths in Asia Minor, led by the chieftain Tribigild, who was also hostile to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Solid-state Lighting
Solid-state lighting (SSL) is a type of lighting that uses semiconductor light-emitting diodes (LEDs), organic light-emitting diodes (OLED), or polymer light-emitting diodes (PLED) as sources of illumination rather than electrical filaments, plasma (used in arc lamps such as fluorescent lamps), or gas. Solid state electroluminescence is used in SSL as opposed to incandescent bulbs (which use thermal radiation) or fluorescent tubes. Compared to incandescent lighting, SSL creates visible light with reduced heat generation and less energy dissipation. Most common "white LEDs” convert blue light from a solid-state device to an (approximate) white light spectrum using photoluminescence, the same principle used in conventional fluorescent tubes. The typically small mass of a solid-state electronic lighting device provides for greater resistance to shock and vibration compared to brittle glass tubes/bulbs and long, thin filament wires. They also eliminate filament evaporation, poten ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Plastic
Plastics are a wide range of synthetic or semi-synthetic materials that use polymers as a main ingredient. Their plasticity makes it possible for plastics to be moulded, extruded or pressed into solid objects of various shapes. This adaptability, plus a wide range of other properties, such as being lightweight, durable, flexible, and inexpensive to produce, has led to its widespread use. Plastics typically are made through human industrial systems. Most modern plastics are derived from fossil fuel-based chemicals like natural gas or petroleum; however, recent industrial methods use variants made from renewable materials, such as corn or cotton derivatives. 9.2 billion tonnes of plastic are estimated to have been made between 1950 and 2017. More than half this plastic has been produced since 2004. In 2020, 400 million tonnes of plastic were produced. If global trends on plastic demand continue, it is estimated that by 2050 annual global plastic production will reach over 1, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Nitride
Indium gallium nitride (InGaN, ) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. InxGa1−xN has a direct bandgap span from the infrared (0.69 eV) for InN to the ultraviolet (3.4 eV) of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7. Applications LEDs Indium gallium nitride is the light-emitting layer in modern blue and green LEDs and often grown on a GaN buffer on a transparent substrate as, e.g. sapphire or silicon carbide. It has a high heat capacity and its sensitivity to ionizing radiation is low (like other group III nitrides), making it also a potentially suitable material for solar photovoltaic devices, specifically for arrays for satellites. It is theoretically predicted that spinodal decomposition of indium nitride should occur for compositions between 15% and 85%, leadi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Arsenide
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are ( group III) elements of the periodic table while arsenic is a (group V) element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics. The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications. Nomenclature Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards the preferred nomenclature for the alloy is GaxIn1-xAs where the group-III elements appear in order of increasing atomic number, as in the related alloy system AlxGa1-xAs. By far, the m ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
