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Ion Implantation
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy (10s of MeV) can cause nuclear transmutation. General principle Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ion Implantation Machine At LAAS 0521
An ion () is an atom or molecule with a net electric charge, electrical charge. The charge of an electron is considered to be negative by convention and this charge is equal and opposite to the charge of a proton, which is considered to be positive by convention. The net charge of an ion is not zero because its total number of electrons is unequal to its total number of protons. A cation is a positively charged ion with fewer electrons than protons while an anion is a negatively charged ion with more electrons than protons. Opposite electric charges are pulled towards one another by electrostatic force, so cations and anions attract each other and readily form ionic compounds. Ions consisting of only a single atom are termed atomic or monatomic ions, while two or more atoms form molecular ions or polyatomic ions. In the case of physical ionization in a fluid (gas or liquid), "ion pairs" are created by spontaneous molecule collisions, where each generated pair consists of a fr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silica
Silicon dioxide, also known as silica, is an oxide of silicon with the chemical formula , most commonly found in nature as quartz and in various living organisms. In many parts of the world, silica is the major constituent of sand. Silica is one of the most complex and most abundant families of materials, existing as a compound of several minerals and as a synthetic product. Notable examples include fused quartz, fumed silica, silica gel, opal and aerogels. It is used in structural materials, microelectronics (as an Insulator (electricity), electrical insulator), and as components in the food and pharmaceutical industries. Structure In the majority of silicates, the silicon atom shows tetrahedral coordination geometry, tetrahedral coordination, with four oxygen atoms surrounding a central Si atomsee 3-D Unit Cell. Thus, SiO2 forms 3-dimensional network solids in which each silicon atom is covalently bonded in a tetrahedral manner to 4 oxygen atoms. In contrast, CO2 is a linear ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Sapphire
Sapphire is a precious gemstone, a variety of the mineral corundum, consisting of aluminium oxide () with trace amounts of elements such as iron, titanium, chromium, vanadium, or magnesium. The name sapphire is derived via the Latin "sapphirus" from the Greek "sappheiros", which referred to Lapis lazuli, lapis lazuli. It is typically blue, but natural "fancy" sapphires also occur in yellow, purple, orange, and green colors; "parti sapphires" show two or more colors. Red corundum stones also occur, but are called ruby, rubies rather than sapphires. Pink-colored corundum may be classified either as ruby or sapphire depending on locale. Commonly, natural sapphires are cut and polished into gemstones and worn in jewellery, jewelry. They also may be created synthetically in laboratories for industrial or decorative purposes in large boule (crystal), crystal boules. Because of the remarkable hardness of sapphires 9 on the Mohs scale of mineral hardness, Mohs scale (the third hardest ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanoparticle
A nanoparticle or ultrafine particle is usually defined as a particle of matter that is between 1 and 100 nanometres (nm) in diameter. The term is sometimes used for larger particles, up to 500 nm, or fibers and tubes that are less than 100 nm in only two directions. At the lowest range, metal particles smaller than 1 nm are usually called atom clusters instead. Nanoparticles are usually distinguished from microparticles (1-1000 µm), "fine particles" (sized between 100 and 2500 nm), and "coarse particles" (ranging from 2500 to 10,000 nm), because their smaller size drives very different physical or chemical properties, like colloidal properties and ultrafast optical effects or electric properties. Being more subject to the brownian motion, they usually do not sediment, like colloidal particles that conversely are usually understood to range from 1 to 1000 nm. Being much smaller than the wavelengths of visible light (400-700 nm), nano ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ion Beam Mixing
Ion beam mixing is the atomic intermixing and alloying that can occur at the interface separating two different materials during ion irradiation. It is applied as a process for adhering two multilayers, especially a substrate and deposited surface layer. The process involves bombarding layered samples with doses of ion radiation in order to promote mixing at the interface, and generally serves as a means of preparing electrical junctions, especially between non-equilibrium or metastable alloys and intermetallic compounds. Ion implantation equipment can be used to achieve ion beam mixing. Mechanism The unique effects that stem from ion beam mixing are primarily a result of ballistic effects; that is, impinging ions have high kinetic energies that are transferred to target atoms on collision. Ion energies can be seen on the order of 1 k eV to 200 keV. When accelerated, such ion energies are sufficiently high to break intra- and especially inter-molecular bonds, and initiate re ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nickel Silicide
Nickel silicides include several intermetallic compounds of nickel and silicon. Nickel silicides are important in microelectronics as they form at junctions of nickel and silicon. Additionally thin layers of nickel silicides may have application in imparting surface resistance to nickel alloys. Compounds Nickel silicides include Ni3Si, Ni31Si12, Ni2Si, Ni3Si2, NiSi and NiSi2. Ni31Si12, Ni2Si, and NiSi have congruent melting points; the others form via a peritectic transformation. The silicides can be made via fusion or solid state reaction between the elements, diffusion at a junction of the two elements, and other methods including ion beam mixing. Properties Nickel silicides are generally chemically and thermally stable. They have low electrical resistivity; with NiSi 10.5–18 μΩ·cm, Ni2Si 24–30 μΩ·cm, NiSi2 34–50 μΩ·cm; nickel-rich silicides have higher resistivity rising to 90–150 μΩ·cm in Ni31Si12. Uses Microelectronics Nickel silicides are important i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Epitaxy
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Annealing (metallurgy)
In metallurgy and materials science, annealing is a heat treatment that alters the physical and sometimes chemical properties of a material to increase its ductility and reduce its hardness, making it more workable. It involves heating a material above its recrystallization temperature, maintaining a suitable temperature for an appropriate amount of time and then cooling. In annealing, atoms migrate in the crystal lattice and the number of dislocations decreases, leading to a change in ductility and hardness. As the material cools it recrystallizes. For many alloys, including carbon steel, the crystal grain size and phase composition, which ultimately determine the material properties, are dependent on the heating rate and cooling rate. Hot working or cold working after the annealing process alters the metal structure, so further heat treatments may be used to achieve the properties required. With knowledge of the composition and phase diagram, heat treatment can be used to ad ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
N-type Semiconductor
An extrinsic semiconductor is one that has been '' doped''; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an ''intrinsic semiconductor''. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An ''electron donor'' dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An ''electron acceptor'' dopant is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
