Heterostructure
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Heterostructure
A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especially on small length scales, where electronic properties depend on spatial properties. A more modern definition of heterojunction is the interface between any two solid-state materials, including crystalline and amorphous structures of metallic, insulating, fast ion conductor and semiconducting materials. Manufacture and applications Heterojunction manufacturing generally requires the use of mo ...
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Diode Laser
The laser diode chip removed and placed on the eye of a needle for scale A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission. Stimulated emission can be produced when the process is continued and further generates light with the same phase, coherence and wavelength. The choice of the semiconductor material determines the wavelength of the emitted beam, which in today's laser diodes range from infra-red to the UV spectrum. Laser diodes are the most common type of lasers produced, with a wide range of uses that include fiber optic comm ...
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Herbert Kroemer
Herbert Kroemer (; born August 25, 1928) is a German-American physicist who, along with Zhores Alferov, received the Nobel Prize in Physics in 2000 for "developing semiconductor heterostructures used in high-speed- and opto-electronics". Kroemer is professor emeritus of electrical and computer engineering at the University of California, Santa Barbara, having received his Ph.D. in theoretical physics in 1952 from the University of Göttingen, Germany, with a dissertation on hot electron effects in the then-new transistor. His research into transistors was a stepping stone to the later development of mobile phone technologies. Career Kroemer worked in a number of research laboratories in Germany and the United States and taught electrical engineering at the University of Colorado from 1968 to 1976. He joined the UCSB faculty in 1976, focusing its semiconductor research program on the emerging compound semiconductor technology rather than on mainstream silicon technology. Along with ...
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GaAs
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski (LEC) growth is used for producing high-puri ...
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Layer (electronics)
A layer is the deposition (physics), deposition of molecules on a Substrate (materials science), substrate or base (glass, ceramic, semiconductor, or plastic/bioplastic). High temperature substrates includes stainless steel and polyimide film (expensive) and Polyethylene terephthalate, PET (cheap). A depth of less than one micrometre is generally called a thin film while a depth greater than one micrometre is called a coating. A web (manufacturing), web is a wikt:flexible, flexible substrate. See also *Coating *Heterojunction *Nanoparticle *Organic electronics *Passivation (chemistry), Passivation *Printed electronics *Sputtering *Thermal annealing *Transparent conducting oxide References

Electronics concepts Semiconductor device fabrication {{Electron-stub ...
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Room Temperature
Colloquially, "room temperature" is a range of air temperatures that most people prefer for indoor settings. It feels comfortable to a person when they are wearing typical indoor clothing. Human comfort can extend beyond this range depending on humidity, air circulation and other factors. Food or beverages may be served at ''room temperature'', meaning neither heated nor cooled. In certain fields, like science and engineering, and within a particular context, ''room temperature'' can mean different agreed-upon ranges. In contrast, ''ambient temperature'' is the actual temperature, as measured by a thermometer, of the air (or other medium and surroundings) in any particular place. The ambient temperature (e.g. an unheated room in winter) may be very different from an ideal ''room temperature''. Comfort temperatures ''The American Heritage Dictionary of the English Language'' identifies room temperature as around , while the ''Oxford English Dictionary'' states that it is "conv ...
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Gain (electronics)
In electronics, gain is a measure of the ability of a two-port electrical network, circuit (often an amplifier) to increase the Electric power, power or amplitude of a Signal (electrical engineering), signal from the input to the output port by adding energy converted from some power supply to the signal. It is usually defined as the mean ratio of the Signalling (telecommunication), signal amplitude or power at the output port (circuit theory), port to the amplitude or power at the input port. It is often expressed using the logarithmic decibel (dB) units ("dB gain"). A gain greater than one (greater than zero dB), that is amplification, is the defining property of an active component or circuit, while a passive circuit will have a gain of less than one. The term ''gain'' alone is ambiguous, and can refer to the ratio of output to input voltage (''voltage gain''), Electric current, current (''current gain'') or electric power (''power gain''). In the field of audio and general ...
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Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ...
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Compound Semiconductor
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows op ...
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Semiconductor Materials
A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities (" doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricat ...
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Transceiver
In radio communication, a transceiver is an electronic device which is a combination of a radio ''trans''mitter and a re''ceiver'', hence the name. It can both transmit and receive radio waves using an antenna, for communication purposes. These two related functions are often combined in a single device to reduce manufacturing costs. The term is also used for other devices which can both transmit and receive through a communications channel, such as ''optical transceivers'' which transmit and receive light in optical fiber systems, and ''bus transceivers'' which transmit and receive digital data in computer data buses. Radio transceivers are widely used in wireless devices. One large use is in two-way radios, which are audio transceivers used for bidirectional person-to-person voice communication. Examples are cell phones, which transmit and receive the two sides of a phone conversation using radio waves to a cell tower, cordless phones in which both the phone handset and ...
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Fiber Optic
An optical fiber, or optical fibre in Commonwealth English, is a flexible, transparent fiber made by drawing glass (silica) or plastic to a diameter slightly thicker than that of a human hair. Optical fibers are used most often as a means to transmit light between the two ends of the fiber and find wide usage in fiber-optic communications, where they permit transmission over longer distances and at higher bandwidths (data transfer rates) than electrical cables. Fibers are used instead of metal wires because signals travel along them with less loss; in addition, fibers are immune to electromagnetic interference, a problem from which metal wires suffer. Fibers are also used for illumination and imaging, and are often wrapped in bundles so they may be used to carry light into, or images out of confined spaces, as in the case of a fiberscope. Specially designed fibers are also used for a variety of other applications, some of them being fiber optic sensors and fiber lasers. Op ...
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Step-index Profile
For an optical fiber, a step-index profile is a refractive index profile characterized by a uniform refractive index within the core and a sharp decrease in refractive index at the core-cladding interface so that the cladding is of a lower refractive index. The step-index profile corresponds to a power-law index profile with the profile parameter approaching infinity. The step-index profile is used in most single-mode fibers and some multimode fibers. A step-index fiber is characterized by the core and cladding refractive indices ''n1'' and ''n2'' and the core and cladding radii a and b. Examples of standard core and cladding diameters 2a/2b are 8/125, 50/125, 62.5/125, 85/125, or 100/140 (units of µm). The fractional refractive-index change \triangle \, = \frac \ll \ 1. The value of n1 is typically between 1.44 and 1.46, and \triangle is typically between 0.001 and 0.02. Step-index optical fiber is generally made by doping high-purity fused silica glass (SiO2) with differe ...
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