Frank–van Der Merwe Growth

	Frank–Van Der Merwe Growth Frank–Van der Merwe growth (or FM growth) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. It is also known as 'layer-by-layer growth'. It is considered an ideal growth model, requiring perfect lattice matching between the substrate and the layer growing on to it, and it is usually limited to homoepitaxy. For FM growth to occur, the atoms that are to be deposited should be more attracted to the substrate than to each other, which is in contrast to the layer-plus-island growth model. FM growth is the preferred growth model for producing smooth films. It was first described by South African physicist Jan van der Merwe and British physicist Frederick Charles Frank in a series of four papers based on Van der Merwe's PhD research between 1947 and 1949. See also * Epitaxy * Thin films A thin film is a layer of material ranging from fractions of a nanometer ( monolayer) to several micrometers in thickness. The controll ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu]
picture info	Thin Film A thin film is a layer of material ranging from fractions of a nanometer ( monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The process of silvering was once commonly used to produce mirrors, while more recently the metal layer is deposited using techniques such as sputtering. Advances in thin film deposition techniques during the 20th century have enabled a wide range of technological breakthroughs in areas such as magnetic recording media, electronic semiconductor devices, integrated passive devices, LEDs, optical coatings (such as antireflective coatings), hard coatings on cutting tools, and for both energy generation (e.g. thin-film solar cells) and storage ( thin-film batteries). It is als ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu]
picture info	Epitaxially Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu]
	Stranski–Krastanov Growth Stranski–Krastanov growth (SK growth, also Stransky–Krastanov or Stranski–Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as 'layer-plus-island growth', the SK mode follows a two step process: initially, complete films of adsorbates, up to several monolayers thick, grow in a layer-by-layer fashion on a crystal substrate. Beyond a critical layer thickness, which depends on strain and the chemical potential of the deposited film, growth continues through the nucleation and coalescence of adsorbate 'islands'. This growth mechanism was first noted by Ivan Stranski and Lyubomir Krastanov in 1938. It wasn't until 1958 however, in a seminal work by Ernst Bauer published in ''Zeitschrift für Kristallographie'', that the SK, Volmer–Weber, and Frank–van der Merwe mechanisms were systematically classified as the primary thin-film growth processes. Since then, SK growth has been the subject of intense ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu]
picture info	Jan H Van Der Merwe Johannes Hendrik van der Merwe (28 February 1922 - 28 February 2016) was a South Africa, South African mathematician and physicist. The Frank–van der Merwe growth, Frank–Van der Merwe crystal growth model carries his name and he was awarded numerous South African academic prizes. He is sometimes referred to as the "Father of Epitaxy". His research is seen as fundamental to applications in communication technology. Education and early life Van der Merwe was born on 28 February 1922 to Dorslandtrekkers Johannes Marthinus van der Merwe and Catharina Margaretha van der Merwe in Humpata, Portuguese Angola, Angola. Although his parents both came from large families—his father had four siblings and his mother had five siblings—he was an only child. In 1928, he and his family moved to South West Africa. It is believed that they travelled by ox-wagon. During his formative years the family moved between present day Outjo and Gobabis and finally settled in Otjiwarongo, where he f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu]
	Frederick Charles Frank Sir Frederick Charles Frank, OBE, FRS (6 March 1911 – 5 April 1998) was a British theoretical physicist. He is best known for his work on crystal dislocations, including (with Thornton Read) the idea of the Frank–Read source of dislocations. He also proposed the cyclol reaction in the mid-1930s, and made many other contributions to solid-state physics, geophysics, and the theory of liquid crystals. Early life and education He was born in Durban, South Africa, although his parents returned to England soon afterwards. He was educated at Thetford Grammar School and Ipswich School and went on to study chemistry at Lincoln College, Oxford, gaining a doctorate at the university's Engineering Laboratory. Career Prior to World War II, he worked as a physicist in Berlin and as a colloid chemist in Cambridge. During World War II he joined the Chemical Defence Experimental Station at Porton Down, Wiltshire, but in 1940 was transferred to the Air Ministry's Assistant Directorate ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu]
picture info	Epitaxy Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlatti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu]
picture info	Thin Films A thin film is a layer of material ranging from fractions of a nanometer ( monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The process of silvering was once commonly used to produce mirrors, while more recently the metal layer is deposited using techniques such as sputtering. Advances in thin film deposition techniques during the 20th century have enabled a wide range of technological breakthroughs in areas such as magnetic recording media, electronic semiconductor devices, integrated passive devices, LEDs, optical coatings (such as antireflective coatings), hard coatings on cutting tools, and for both energy generation (e.g. thin-film solar cells) and storage ( thin-film batteries). It is als ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu]
picture info	Molecular-beam Epitaxy Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). History Original ideas of MBE process were first established by Günther. Films he deposited were not epitaxial, but were deposited on glass substrates. With the development of vacuum technology, MBE process was demonstrated by Davey and Pankey who succeeded in growing GaAs epitaxial films on single crystal GaAs substrates using Günther's method. Major subsequent development of MBE films was enabled by J.R. Arthur's investigations of kinetic behavior of growth mechanisms and Alfred Y. Cho's in situ observation of MBE process ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu]